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2012 International Electron Devices Meeting
We fabricated and characterized new ambipolar silicon nanowire (SiNW) FET transistors featuring two independent gate-all-around electrodes and vertically stacked SiNW channels. One gate electrode enables dynamic configuration of the device polarity (n or p-type), while the other switches on/off the device. Measurement results on silicon show I on /I off > 10 6 and S 64mV/dec (70mV/dec) for p(n)-type operation in the same device. We show that XOR operation is embedded in the devicedoi:10.1109/iedm.2012.6479004 fatcat:mmas2duy2jcdvcdzdo3t4sz5yq