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A method applied for improving the measurement precision and efficiency of wafer focusing in an optical lithography instrument (OLI) is introduced. Based on grating shearing interferometry, the defocus and tilt of the wafer are measured by testing the phase difference in the interference pattern. To validate the feasibility, an experiment is implemented, of which the measurement precision is indicated as 30 nm due to the high precision of phase-resolving arithmetic after analyzing thedoi:10.3390/app10217467 fatcat:uwalypyvsbdbxds2ctfggvrrga