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This letter shows a high-power, high-efflciency, wideband Class-E RF power amplifier designed upon the load admittance synthesis concept and built using an uncomplicated low-loss load network with a low loss wideband admittance transformer as the main component. It uses a power Silicon LDMOS transistor to provide up to 145 W at 28 V peak power, up to 86 % drain efflciency over 35% fractional bandwidth (from 85 to 120 MHz) and 15.6 dB gain at peak power without any adjustments. These are cleardoi:10.1109/lmwc.2010.2064760 fatcat:7e7vpsnt3zg5rlohtemeg77jjq