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The ability to create NTD silicon technology in the IRT-T reactor in a horizontal experimental channel with one-side access

V A Varlachev, A V Golovatsky, E G Emets, Ya A Butko
2016 IOP Conference Series: Materials Science and Engineering  
The article shows the ability of creation of neutron transmutation doping (NTD) of monocrystalline silicon technology in the reactor's channel, which has a one-side access. In the article a distribution of thermal neutron flux through the length of channel and it's radius, neutron spectrum were obtained which confirmed that horizontal experimental channel HEC-1 is suitable for NTD.
doi:10.1088/1757-899x/135/1/012047 fatcat:lofipu5htzebhgqhqk3n5fnbai