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This paper discusses the nature of degradation by NBTI effect in MOS junctionless devices when varying the density of interface traps and surface potential. The data obtained in simulations are compared with results from physical devices and it is demonstrated how the quality of gate oxide affects the performance of such transistors, when the density of traps, the channel width, the doping concentration and the gate bias are varied.doi:10.29292/jics.v15i2.196 fatcat:kxyn6mhqefgc3pypymit5qogdi