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Design of Low Voltage, Low Power (IF) Amplifier Based-On MOSFET Darlington Configuration

Hassan Jassim Motlak
2013 Circuits and Systems  
This paper presents a different approach of Intermediate Frequency (IF) amplifier using 0.18 μm MIETEC technology channel length of MOSFET Darlington transistors. In contrast to Bipolar conventional Darlington pair, a MOSFET Darlington configuration is employed to reduce supply voltage (V DD ) and DC consumption power (P c ). The frequency response parameters of the proposed design such as bandwidth, gain bandwidth product, input/output noises and noise figure (NF) are improved in proposed (IF)
more » ... ed in proposed (IF) amplifier. Moreover, a dual-input and dual-output (DIDO) IF amplifier constructed from two symmetrical single input and single output (SISO) (IF) amplifier is proposed too. The idea is to achieve improved bandwidth, and flat response, because these parameters are very important in high frequency applications. Simulation results that obtained by P-SPICE program are 1.2 GHz Bandwidth (BW), 3.4 GHz (gain bandwidth product), 0.5 mW DC consumption power (P c ) and the low total output noise is 12 nV Hz with 1.2 V single supply voltage. The dual-input, dual-output (DIDO) (IF) amplifier plays important role in several mobile applications such as multiband, wideband, and high-isolation multiple-input multiple-output techniques [10] . The proposed (DIDO) (IF) amplifier is based on simple circuitry approach with high performance parameters compared with convenional amplifiers. The design idea of proposed dual-input t
doi:10.4236/cs.2013.43036 fatcat:aycco7hgbferdm4ori52dtvklu