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Circuits and Systems
This paper presents a different approach of Intermediate Frequency (IF) amplifier using 0.18 μm MIETEC technology channel length of MOSFET Darlington transistors. In contrast to Bipolar conventional Darlington pair, a MOSFET Darlington configuration is employed to reduce supply voltage (V DD ) and DC consumption power (P c ). The frequency response parameters of the proposed design such as bandwidth, gain bandwidth product, input/output noises and noise figure (NF) are improved in proposed (IF)doi:10.4236/cs.2013.43036 fatcat:aycco7hgbferdm4ori52dtvklu