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High-performance AlGaN double channel HEMTs with improved drain current density and high breakdown voltage [post]

2020 unpublished
KEYWORDS AlGaN double channel heterostructure, metal organic chemical vapor deposition (MOCVD), high electron mobility transistors
doi:10.21203/rs.2.24040/v1 fatcat:pabw4bjzibddbjb5qs3x53nixi