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The paper presents the results of a study of the effect of irradiation with heavy Xe 22+ ions with an energy of 440 keV and irradiation fluences of 10 14 , 5x10 14 , 10 15 ion/cm 2 on the properties of ceramics based on silicon carbide (SiC). The choice of the type of irradiation and dose load is due to the possibility of modeling radiation damage to the surface layer with a thickness of 200 nm as a result of the effect of overlapping defective areas. The scientific novelty of the resultsdoi:10.31489/2020no1/46-53 fatcat:c3qoui4h45hx7abchymw7i22aq