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We have grown homoepitaxial GaN nanowall networks on GaN template using an ultra-high vacuum laser assisted molecular beam epitaxy system by ablating solid GaN target under a constant r.f. nitrogen plasma ambient.
S. S. Kushvaha, M. Senthil Kumar, A. K. Shukla, B. S. Yadav, Dilip K. Singh, M. Jewariya, S. R. Ragam, K. K. Maurya. "Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy." RSC Advances (2015) 87818-87830