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Optimization of CMOS MEMS microwave power sensors

V. Milanovic, M. Hopcroft, C.A. Zincke, M. Gaitan, M.E. Zaghloul
ISCAS'99. Proceedings of the 1999 IEEE International Symposium on Circuits and Systems VLSI (Cat. No.99CH36349)  
Micromachined power sensors with operation up to 50 GHz were recently achieved in CMOS technology [1]. To improve their sensitivity and signal-to-noise ratio, while maintaining microwave performance, several design parameters must be considered, such as the number and placement of thermocouples. This paper presents experimental and analytical thermal characterization of the sensors, which provides insight into the proper adjustment of the layout parameters. Experimental results were obtained by
more » ... ts were obtained by indirect measurements of the sensor temperature distribution under various applied power conditions. A simple and approximate model was developed, and adjusted based on experimental results, which was then used to show the effects of the variations in layout parameters on the overall device sensitivity. The model includes thermoelectric Peltier and Thomson effects. V. Hvyhvüà và vuà urà 7rxryrà Trà hqà 6phà 8rr
doi:10.1109/iscas.1999.777531 dblp:conf/iscas/MilanovicHZGZ99 fatcat:bsnpf2xzknfhxd2vl5offfvs2e