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Improving Vmin of Sram by Schmitt-Trigger/Read-Write Techniques

Surjith.N Surjith.N
2013 IOSR Journal of VLSI and Signal processing  
In modern Trends, the demand for memory has been increases tremendously. The reduction in SRAM operating voltage, cell stability and the increase in process variation with process scaling are the main concerns and can be done by Schmitt-Trigger Techniques. Read and write assist techniques are now commonly used to lower the minimum operating voltage (V min ) of an SRAM. This paper presents a proposed 7T, 8T SRAM cell based on a various read and write assist technique and reduces the total power
more » ... es the total power consumption and not area overhead of SRAMs while maintaining their performance and compare the output power. Simulation results with 180nm, 120nm CMOS technology.
doi:10.9790/4200-0211520 fatcat:wqujrhjrfzdz5nbtl7lxgndeau