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Quantitative mobility spectrum analysis of carriers in GaSb/InAs/GaSb superlattice

T. V. Chandrasekhar Rao, J. Antoszewski, J. B. Rodriguez, E. Plis, S. Krishna, L. Faraone
2008 Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena  
The authors have investigated electrical transport in a type II GaSb/InAs superlattice grown on GaSb using "quantitative mobility spectrum analysis." Their results indicate that the superlattice contributes a lone electron specie with an ambient temperature mobility of ϳ10 4 cm 2 / V s. Variable temperature studies in the range 50-300 K show that the carrier is associated with an activation energy of 0.27 eV, which is very close to the superlattice band gap.
doi:10.1116/1.2839641 fatcat:p7qi4e462farji3dgysbq6udpq