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Modeling of InGaN/GaAs Photovoltaic Tandem with GaAs/AlAs Bragg Mirror Rear Surface Reflector

Energy Research F, Bouzid
2014 unpublished
In this work, a parametric study of a dual junction tandem based on In 0.53 Ga 0.47 N on GaAs has been carried. In order to obtain reflection of unabsorbed photons from the bottom of the device, Bragg reflectors (BR) composed of GaAs/AlAs, with appropriate thicknesses, was placed in the rear surface of the GaAs sub-cell. With this intention, the current-voltage curves are calculated for different front recombination velocities and the influence of the bottom cell thickness on efficiency has
more » ... efficiency has been studied. The results of simulation show that the structure's efficiency can attain 29% under 1-sun AM1.5 illumination, for a front recombination velocity value of 1e 3 cm/s and 10µm bottom cell thickness. This efficiency will decrease with increasing the operating temperature.