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RF CMOS Integrated Circuit: History, Current Status and Future Prospects

Noboru ISHIHARA, Shuhei AMAKAWA, Kazuya MASU
2011 IEICE Transactions on Fundamentals of Electronics Communications and Computer Sciences  
time signals; therefore, it is necessary to integrate the design of high-speed digital circuits, which is based on the use of discrete voltages and the discrete time domain, with analog design, in order  ...  As great advancements have been made in CMOS process technology over the past 20 years, RF CMOS circuits operating in the microwave band have rapidly developed from component circuit levels to multiband  ...  Acknowledgments We are all thanks for students and researchers who were or are engaged in studding of the future LSI circuit design with us.  ... 
doi:10.1587/transfun.e94.a.556 fatcat:4fvaacoeqfc6nhmpgmjg5mrdiq

AN RF TRANSCEIVER FOR WIRELESS CHIP-TO-CHIP COMMUNICATION USING A CROSS-COUPLED OSCILLATOR

Hooyoung Shin, Milim Lee, Changhyun Lee, Changkun Park
2019 Progress In Electromagnetics Research C  
In this study, we propose a transceiver architecture for wireless chip-to-chip communication using on/off keying (OOK) modulation.  ...  To verify the feasibility of the proposed transceiver, we design a transceiver using a 180-nm complementary metal-oxide-semiconductor process.  ...  To verify the feasibility of the proposed transceiver, we design a transceiver using a 180-nm CMOS process.  ... 
doi:10.2528/pierc19020902 fatcat:mypk2kul75aerfijqnhriyndn4

STUDY OF THE COIL STRUCTURE FOR WIRELESS CHIP-TO-CHIP COMMUNICATION APPLICATIONS

Changhyun Lee, Jonghoon Park, Jinho Yoo, Changkun Park
2013 Progress In Electromagnetics Research Letters  
In this work, we propose a merged coil structure for wireless chip-to-chip communication technology.  ...  To verify the feasibility of the coil, an electromagnetic simulation and a schematic simulation are performed. The coil was implemented using 50-nm digital CMOS technology.  ...  The test chip is implemented in the 50-nm digital CMOS process in which two metal layers are provided.  ... 
doi:10.2528/pierl13022002 fatcat:eobhs56hlncrzm67qiv2niia6q

Design considerations for 60 GHz CMOS radios

C.H. Doan, S. Emami, D.A. Sobel, A.M. Niknejad, R.W. Brodersen
2004 IEEE Communications Magazine  
With the availability of 7 GHz of unlicensed spectrum around 60 GHz, there is growing interest in using this resource for new consumer applications requiring very high-data-rate wireless transmission.  ...  A fully integrated CMOS solution has the potential to drastically reduce costs enough to hit consumer price points.  ...  A wideband general-purpose 60 GHz amplifier has been designed and fabricated in a 130 nm digital CMOS process with no special analog orn n n nFigure 5. a) Chip micrograph of the 60 GHz amplifier: the chip  ... 
doi:10.1109/mcom.2004.1367565 fatcat:4auradxk7jgtlczlp6ulenjr3u

RF/wireless-interconnect: The next wave of connectivity

SaiWang Tam, Mau-Chung Frank Chang
2011 Science China Information Sciences  
To overcome such challenges, we first explore the use of multiband RF/wireless-interconnects which can communicate simultaneously through multiple frequency bands with low power signal transmission, reconfigurable  ...  for all three types of interconnects, including communication data throughput, range and power consumption (pJ/bit) among the RF/wireless-interconnects, the optical interconnects and traditional parallel  ...  Acknowledgements The authors would like to thank US DARPA and GSRC for their contract support and TAPO/IBM, TSMC and MIT Lincoln Lab for their foundry services.  ... 
doi:10.1007/s11432-011-4225-8 fatcat:ndqip657abfx7mxusorw5zqhp4

Introduction to the December Special Issue on the 2015 IEEE International Solid-State Circuits Conference

Makoto Takamiya, Jieh-Tsorng Wu, Jussi Ryynanen, Kenichi Okada, Jaeha Kim
2015 IEEE Journal of Solid-State Circuits  
To reduce chip area, it uses a CT self-coupling technique to realize the function of two integrators using a single opamp.  ...  It describes the design of a 28 Gb/s multistandard transceiver with data rates up to 28 Gb/s in 28 nm CMOS.  ... 
doi:10.1109/jssc.2015.2496978 fatcat:ojgyufq7bzdf7olye4lhxiqvvi

A CMOS IR-UWB Transceiver Design for Contact-Less Chip Testing Applications

Yanjie Wang, A.M. Niknejad, V. Gaudet, K. Iniewski
2008 IEEE Transactions on Circuits and Systems - II - Express Briefs  
This paper presents a novel CMOS impulse radio (IR) ultra-wide-band (UWB) transceiver system design for future contact-less chip testing applications using inductive magnetic coupling as wireless interconnect  ...  SpectreRF postlayout simulation with a 90-nm CMOS technology shows that the transceiver operates up to a 5 Gb/s data rate, and consumes a total of 9 mW under a 1-V power supply.  ...  UWB TRANSCEIVER SYSTEM FOR WIRELESS CHIP TESTING Wireless interfaces have been reported either using on-chip antenna for clock distribution system [4] , or magnetic coupling transformers for RFID and  ... 
doi:10.1109/tcsii.2008.919502 fatcat:oaza5lsqp5e6zkqcv7bsiqoldq

System LSI: Challenges and Opportunities

T. KURODA
2006 IEICE transactions on electronics  
End of CMOS scaling has been discussed in many places since the late 90's. Even if the end of CMOS scaling is irrelevant, it is for sure that we are facing a turning point in semiconductor business.  ...  Acknowledgements The author would like to acknowledge Prof. Iwata, Prof. Yokoyama, and Prof. Kikkawa for encouragement.  ...  Kuroda (35/50) From Mechanical to Electrical 3D-MEMS Wireless Super-Connect (WSC) Proposal wireless transceiver arrays (-) KGD (-) process (-) scaling limit (+) KGD solvable : easy to attach and remove  ... 
doi:10.1093/ietele/e89-c.3.213 fatcat:2qtq2qcp6neqdkjlns25gjsuae

A Zero-IF 60 GHz 65 nm CMOS Transceiver With Direct BPSK Modulation Demonstrating up to 6 Gb/s Data Rates Over a 2 m Wireless Link

Alexander Tomkins, Ricardo Andres Aroca, Takuji Yamamoto, Sean T. Nicolson, Yoshiyasu Doi, Sorin P. Voinigescu
2009 IEEE Journal of Solid-State Circuits  
The transceiver is fabricated in a 65 nm CMOS process with a digital back-end.  ...  With both the transmitter and the receiver turned on, the chip consumes 374 mW from 1.2 V which reduces to 232 mW for a 1.0 V supply. It occupies 1.28 0.81 mm 2 .  ...  Wiklund of Fujitsu Laboratories of America Inc. for their support and discussions on digital-rich mm-wave radio transceivers and the IEEE 802.15.3c standard specification.  ... 
doi:10.1109/jssc.2009.2022918 fatcat:kdzmq45p5zedfesgcbcvui4d5u

Guest Editorial: Selected Papers From the 2020 IEEE International Solid-State Circuits Conference

Alison Burdett, Pedram Mohseni, Maysam Ghovanloo, Roman Genov
2020 IEEE Transactions on Biomedical Circuits and Systems  
The transceiver is implemented in 40 nm CMOS technology, occupying 2 mm 2 of die area. The transceiver chip and a miniature antenna are integrated in a 3.5 × 15 mm 2 prototype wireless module.  ...  , all integrated on a 5 × 3 mm 2 chip fabricated in 0.35 µm standard CMOS process.  ... 
doi:10.1109/tbcas.2020.3042921 fatcat:l5tz4zzx3zgsbdfanq66na7fua

Sub-Milliwatt Transceiver IC for Transcutaneous Communication of an Intracortical Visual Prosthesis

Adedayo Omisakin, Rob Mestrom, Georgi Radulov, Mark Bentum
2021 Electronics  
To make the solution low-power, predominantly digital components are used in the presented transceiver test-chip.  ...  The transceiver test-IC is fabricated in 180 nm CMOS technology and occupies only 0.0272 mm2.  ...  Acknowledgments: The authors would like to thank Pieter Harpe from the Eindhoven University of Technology for his reviews and support during the IC design and fabrication process.  ... 
doi:10.3390/electronics11010024 fatcat:dakylfzzkbgq7dwe4nti6rlcqi

Integration solutions for reconfigurable multi-standard wireless transceivers

Ajinkya Kale, Graciele Batistell, Suchendranath Popuri, Vijaya Sankara Rao Pasupureddi, Wolfgang Bösch, Johannes Sturm
2018 e & i Elektrotechnik und Informationstechnik  
passive components in order to fulfill the more and more stringent requirements for wireless systems.  ...  A LNA circuit implemented in 65 nm CMOS technology provides a continuously tunable-gain (3-23 dB) and a tunable frequency band (4.5 GHz-5.5 GHz) with noise figure of 2 dB and IIP 3 of −6.5 dBm at the highest  ...  , and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.  ... 
doi:10.1007/s00502-018-0595-6 fatcat:q5aou4zfvnadfasdv6jfezo6qy

The First Fully Integrated Quad-Band GSM/GPRS Receiver in a 90-nm Digital CMOS Process

K. Muhammad, Y.-C. Ho, T.L. Mayhugh, C.-M. Hung, T. Jung, I. Elahi, C. Lin, I. Deng, C. Fernando, J.L. Wallberg, S.K. Vemulapalli, S. Larson (+8 others)
2006 IEEE Journal of Solid-State Circuits  
self test in a 90-nm digital CMOS process.  ...  The receiver meets a sensitivity of 110 dBm at 60 mA in a 1.4-V digital CMOS process in the presence of more than one million digital gates.  ...  CONCLUSION The first single-chip GSM transceiver is presented in 90-nm CMOS process.  ... 
doi:10.1109/jssc.2006.877271 fatcat:pbrla2gkn5e4fex3on7lvioeeq

A 1 V 250 KPPS 90 NM CMOS pulse based transceiver for CM-range wireless communication

D. Guermandi, S. Gambini, J. Rabaey
2007 Proceedings of ESSCIRC  
We present a baseband pulse based transceiver for centimeter range wireless communication.  ...  It is implemented in 90nm CMOS technology and uses a 0.5cm 2 on board inductor as antenna to reduce cost and minimize size.  ...  ACKNOWLEDGEMENTS The authors would like to thank STMicroelectronics for chip fabrication, Luca De Nardis for fruitful discussions on nodes synchronization and MARCO for funding (COA: 79952-23799-44-ND0389  ... 
doi:10.1109/esscirc.2007.4430264 fatcat:ncgvem47eje2tlxjseddiwrece

2019 Index IEEE Journal of Solid-State Circuits Vol. 54

2019 IEEE Journal of Solid-State Circuits  
., +, JSSC May 2019 1339-1350 Digital signal processing chips A Mm-Wave Wideband MIMO RX With Instinctual Array-Based Blocker/ Signal Management for Ultralow-Latency Communication.  ...  ., +, JSSC Feb. 2019 392-402 A Millimeter-Wave CMOS Transceiver With Digitally Pre-Distorted PAM-4 Modulation for Contactless Communications.  ... 
doi:10.1109/jssc.2019.2956675 fatcat:laiuae7dtragjijttgfatsldmu
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