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Program Schedule - October 8, 2019 (Hotel Metropolitan Sendai)
2019
2019 International 3D Systems Integration Conference (3DIC)
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Abstract: This paper presents thermal measurement data of GaN HEMT on CMOS HI using a Diverse Accessible Heterogeneous Integration (DAHI) process. ...
Work from the Diverse Accessible Heterogeneous Integration (DAHI) program will be the primary focus and will highlight the use of dielet bonding and wafer-scale bonding of CMOS with InP, GaN and GaAs for ...
Moreover, the effect of polarity of additives in the etching solution on the morphology of etched Si were investigated. ...
doi:10.1109/3dic48104.2019.9058792
fatcat:6kz54ru5uzdbzeecpentkxprqe
A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities
2011
IEEE Journal of Selected Topics in Quantum Electronics
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of synthesis and unique optical, mechanical, electrical, and thermal properties. ...
The successful integration of these NW PDs on CMOS-compatible substrates and various low-cost substrates via direct growth and transfer-printing techniques would further enhance and facilitate the adaptation ...
Fig. 17 shows the ZnO and Si NWs integrated on the SRR. ...
doi:10.1109/jstqe.2010.2093508
fatcat:dsc5wyginzchpnjcpa5gdhcsxi
Nanowire Transistor Performance Limits and Applications
2008
IEEE Transactions on Electron Devices
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Finally, we describe 3-D heterogeneous integration that is uniquely enabled by multifunctional nanowires within a bottom-up approach. ...
Third, we discuss basic methods for organization of nanowires necessary for fabricating arrays of device and circuits. ...
This type of 3-D heterogeneous system could be fabricated on top of a conventional CMOS-based circuit for added function, or on, for example, a flexible plastic substrate as a versatile, self-powered nanoelectronic ...
doi:10.1109/ted.2008.2005158
fatcat:v43qd6dpkjh3niarbph3vvut3u
Low-Temperature Bonding for Silicon-Based Micro-Optical Systems
2015
Photonics
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A major challenge to realize highly sensitive systems is the integration of electronic, optical, mechanical and fluidic, all on a common platform. ...
In this paper, wafer level bonding with advanced features such as surface activation and passive alignment for vertical electrical interconnections are identified as candidate technologies to integrate ...
The authors gratefully acknowledge Professor Tadatomo Suga of the University of Tokyo for his ongoing support and contributions to our work. ...
doi:10.3390/photonics2041164
fatcat:klbbzi6mgrdnphuaqdfg4oyphu
D3.4 Intermediate COREnect Industry Roadmap
[article]
2022
Zenodo
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One of the key COREnect objectives is to define a strategic R&I roadmap for future European connectivity systems and components, supporting Europe's strategic autonomy and sovereignty objectives. ...
An end-to-end view of future connectivity systems is depicted in Figure 1. ...
for a large deployment: InP for sub-THz and GaN-on-Si as replacement of GaAs, larger wafer sizes for InP (6" and above). For foundries of existing RF IC technologies: reflect on possibility to enter ...
doi:10.5281/zenodo.5863480
fatcat:fvr57ujos5f2la2trwdtfurlb4
State of the Art and Future Perspectives in Advanced CMOS Technology
2020
Nanomaterials
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Today's transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according ...
This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. ...
Figure 49 . 49 Possible evolution scenario for III-V/Ge devices on Si platform through heterogeneous integration [343] . ...
doi:10.3390/nano10081555
pmid:32784801
pmcid:PMC7466708
fatcat:yssyxekom5hslivtbxbphjg6h4
Detailed Author Index
2020
2020 IEEE/MTT-S International Microwave Symposium (IMS)
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A 623 C A 300GHz Wireless Transceiver in 65nm CMOS for IEEE802.15.3d Using Push-Push Subharmonic Mixer (We2C-1) A 532 C Non-Reciprocal Lithium Niobate-on-Silicon Acoustoelectric Delay Lines (We1E-5) ...
Laboratory, USA) A
289
C InAlN/GaN-on-Si HEMT with 4.5W/mm in a 200-mm CMOS-Compatible MMIC Process
for 3D Integration (Tu3H-3)
Kenney, J.S. ...
, USA) A
289
C InAlN/GaN-on-Si HEMT with 4.5W/mm in a 200-mm CMOS-Compatible MMIC Process
for 3D Integration (Tu3H-3)
Huang, Kai (Chinese Academy of Sciences, China) A
253
C (Tu3E-4)
1093
C ...
doi:10.1109/ims30576.2020.9223810
fatcat:4pzggneub5c5ddwi4gmbotr6gy
Affiliation Index
2020
2020 IEEE/MTT-S International Microwave Symposium (IMS)
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Kalkavage,
Elad Siman-Tov
C
Covert Photonics-Enabled Millimeter-Wave
Transmitter
InAlN/GaN-on-Si HEMT with 4.5W/mm in a 200-mm CMOS-Compatible MMIC Process for 3D Integration MIT Lincoln Laboratory ...
Perry, Gianni Pinelli, Corey Stull, Shireen Warnock, Donna-Ruth Yost, Beijia Zhang InAlN/GaN-on-Si HEMT with 4.5W/mm in a 200-mm CMOS-Compatible MMIC Process for 3D Integration Machine Learning for Accelerated ...
doi:10.1109/ims30576.2020.9223885
fatcat:r7efh7ktevgorc24r4l4vpf3nu
Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review
2021
Nanomaterials
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In this review, we summarize such transfer techniques for heterogeneous integration of ultrathin semiconductor layers or chips to a receiving substrate for many applications, such as microdisplays and ...
Hetero-integration of functional semiconductor layers and devices has received strong research interest from both academia and industry. ...
Introduction Semiconductor materials and devices are the building blocks for most of modern electronics and integration circuits. ...
doi:10.3390/nano11040842
pmid:33806237
pmcid:PMC8065746
fatcat:gyhdvsbtlzdtply2wrns42y6le
Workshop and Short Courses - IMS2015
2015
IEEE Microwave Magazine
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Further, the current trends and the state-of-the-art developments in heterogeneously integrated circuits (up to 250 GHz) including integration of InP-HBT on Si BiCMOS, and integration of GaN-HEMT and InP-HBT ...
The new wafer-level heterogeneously integrated circuit combines III-V semiconductor with Si technology, which allows taking advantage of the high-frequency performance of InP and high power and broadband ...
doi:10.1109/mmm.2015.2389138
fatcat:fvz66gv4wndcji3zaulykqtdle
2020 Index IEEE Transactions on Electron Devices Vol. 67
2020
IEEE Transactions on Electron Devices
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of Charge Partitioning on IM3 Prediction in SOI-LDMOS Transistors; 606-613 Gupta, S.K., see Liang, Y., 1297-1304 Gupta, S.K., see Thakuria, N., TED Nov. 2020 4866-4874 Gupta, S.K., see Thakuria, N ...
Degradation in N-Channel Gate-All-Around Nanowire FETs; TED Jan. 2020 4-10 Gupta, C., Gupta, A., Vega, R.A., Hook, T.B., and Dixit, A., Impact of Hot-Carrier Degradation on Drain-Induced Barrier Lowering ...
., +, TED Dec. 2020 5646-5652 Millimeter wave integrated circuits Gallium Nitride and Silicon Transistors on 300 mm Silicon Wafers Enabled by 3-D Monolithic Heterogeneous Integration. ...
doi:10.1109/ted.2021.3054448
fatcat:r4ertn5jordkfjjvorvss7n6ju
Nanowire photonics
2009
Nature Photonics
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allowed development of a broad range of inorganic nanowire compositions (for example, Si, Ge, ZnO, CdS, GaN, GaAs and InP), including group iv 10, 11 , ii-vi 12, 13 and iii-v 14, 15 compound and ...
highly integrated 2D or 3D heterogeneous material systems with high spatial and angular precision remains a major challenge, relying heavily on post-synthesis integration of various nanowires. ...
acknowledgements The authors would like to acknowledge here contributions of members of our research group and collaborators on this nanowire photonics programme. ...
doi:10.1038/nphoton.2009.184
fatcat:apchj22c3banfcqppsdkub4kq4
2020 Index IEEE Journal of Selected Topics in Quantum Electronics Vol. 26
2020
IEEE Journal of Selected Topics in Quantum Electronics
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-Oct. 2020 6101011
III-V-on-Silicon Integration: From Hybrid Devices to Heterogeneous Pho-
tonic Integrated Circuits. ...
-Oct.
2020 1700209
Integrated circuit interconnections
A Sub-pJ/Bit, Low-ER Mach-Zehnder-Based Transmitter for Chip-to-Chip
Optical Interconnects. ...
doi:10.1109/jstqe.2020.3048204
fatcat:6feiciybzraibah57mi7up6ph4
Semiconductor Wires and Ribbons for High- Performance Flexible Electronics
2008
Angewandte Chemie International Edition
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Images of a printed array of three-dimensional, heterogeneously integrated electronic devices that use ms-Si, ms-GaN, and singlewalled carbon nanotubes printed on a polyimide substrate collected with a ...
, carbon, and III-V compounds such GaAs, InP, and GaN are of particular interest. ...
doi:10.1002/anie.200703238
pmid:18615769
fatcat:r34bdrb7i5f5ncxiecl4szgcuy
2021 Microwave Week Workshops
2021
IEEE Microwave Magazine
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Talks will focus on the development of digital beamformers as well as the efficient implementation and packaging of MIMO arrays at RF and mm-wave systems. ...
The goal of this workshop will be to present state-of-the-art radio circuits and systems exploiting MIMO and digital beamforming for both civilian 5G New Radio (NR) and defense applications. ...
State-of-the-art performance for a broad range of cuttingedge mm-wave-THz (0.1-1-THz) technologies, such as Si (CMOS-bipolar CMOS) and III-V [GaAs, indium phosphide (InP), and GaN], will be presented. ...
doi:10.1109/mmm.2021.3057181
fatcat:bb4dfrxv3rcklowe4fu6cttyiu
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