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Program Schedule - October 8, 2019 (Hotel Metropolitan Sendai)

2019 2019 International 3D Systems Integration Conference (3DIC)  
Abstract: This paper presents thermal measurement data of GaN HEMT on CMOS HI using a Diverse Accessible Heterogeneous Integration (DAHI) process.  ...  Work from the Diverse Accessible Heterogeneous Integration (DAHI) program will be the primary focus and will highlight the use of dielet bonding and wafer-scale bonding of CMOS with InP, GaN and GaAs for  ...  Moreover, the effect of polarity of additives in the etching solution on the morphology of etched Si were investigated.  ... 
doi:10.1109/3dic48104.2019.9058792 fatcat:6kz54ru5uzdbzeecpentkxprqe

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

Logeeswaran VJ, Jinyong Oh, Avinash P. Nayak, Aaron M. Katzenmeyer, Kristin H. Gilchrist, Sonia Grego, Nobuhiko P. Kobayashi, Shih-Yuan Wang, A. Alec Talin, Nibir K. Dhar, M. Saif Islam
2011 IEEE Journal of Selected Topics in Quantum Electronics  
of synthesis and unique optical, mechanical, electrical, and thermal properties.  ...  The successful integration of these NW PDs on CMOS-compatible substrates and various low-cost substrates via direct growth and transfer-printing techniques would further enhance and facilitate the adaptation  ...  Fig. 17 shows the ZnO and Si NWs integrated on the SRR.  ... 
doi:10.1109/jstqe.2010.2093508 fatcat:dsc5wyginzchpnjcpa5gdhcsxi

Nanowire Transistor Performance Limits and Applications

Wei Lu, Ping Xie, Charles M. Lieber
2008 IEEE Transactions on Electron Devices  
Finally, we describe 3-D heterogeneous integration that is uniquely enabled by multifunctional nanowires within a bottom-up approach.  ...  Third, we discuss basic methods for organization of nanowires necessary for fabricating arrays of device and circuits.  ...  This type of 3-D heterogeneous system could be fabricated on top of a conventional CMOS-based circuit for added function, or on, for example, a flexible plastic substrate as a versatile, self-powered nanoelectronic  ... 
doi:10.1109/ted.2008.2005158 fatcat:v43qd6dpkjh3niarbph3vvut3u

Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Yiheng Qin, Matiar Howlader, M. Deen
2015 Photonics  
A major challenge to realize highly sensitive systems is the integration of electronic, optical, mechanical and fluidic, all on a common platform.  ...  In this paper, wafer level bonding with advanced features such as surface activation and passive alignment for vertical electrical interconnections are identified as candidate technologies to integrate  ...  The authors gratefully acknowledge Professor Tadatomo Suga of the University of Tokyo for his ongoing support and contributions to our work.  ... 
doi:10.3390/photonics2041164 fatcat:klbbzi6mgrdnphuaqdfg4oyphu

D3.4 Intermediate COREnect Industry Roadmap [article]

AUSTRALO
2022 Zenodo  
One of the key COREnect objectives is to define a strategic R&I roadmap for future European connectivity systems and components, supporting Europe's strategic autonomy and sovereignty objectives.  ...  An end-to-end view of future connectivity systems is depicted in Figure 1.  ...  for a large deployment: InP for sub-THz and GaN-on-Si as replacement of GaAs, larger wafer sizes for InP (6" and above).  For foundries of existing RF IC technologies: reflect on possibility to enter  ... 
doi:10.5281/zenodo.5863480 fatcat:fvr57ujos5f2la2trwdtfurlb4

State of the Art and Future Perspectives in Advanced CMOS Technology

Henry H. Radamson, Huilong Zhu, Zhenhua Wu, Xiaobin He, Hongxiao Lin, Jinbiao Liu, Jinjuan Xiang, Zhenzhen Kong, Wenjuan Xiong, Junjie Li, Hushan Cui, Jianfeng Gao (+8 others)
2020 Nanomaterials  
Today's transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according  ...  This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology.  ...  Figure 49 . 49 Possible evolution scenario for III-V/Ge devices on Si platform through heterogeneous integration [343] .  ... 
doi:10.3390/nano10081555 pmid:32784801 pmcid:PMC7466708 fatcat:yssyxekom5hslivtbxbphjg6h4

Detailed Author Index

2020 2020 IEEE/MTT-S International Microwave Symposium (IMS)  
A 623 C A 300GHz Wireless Transceiver in 65nm CMOS for IEEE802.15.3d Using Push-Push Subharmonic Mixer (We2C-1) A 532 C Non-Reciprocal Lithium Niobate-on-Silicon Acoustoelectric Delay Lines (We1E-5)  ...  Laboratory, USA) A 289 C InAlN/GaN-on-Si HEMT with 4.5W/mm in a 200-mm CMOS-Compatible MMIC Process for 3D Integration (Tu3H-3) Kenney, J.S.  ...  , USA) A 289 C InAlN/GaN-on-Si HEMT with 4.5W/mm in a 200-mm CMOS-Compatible MMIC Process for 3D Integration (Tu3H-3) Huang, Kai (Chinese Academy of Sciences, China) A 253 C (Tu3E-4) 1093 C  ... 
doi:10.1109/ims30576.2020.9223810 fatcat:4pzggneub5c5ddwi4gmbotr6gy

Affiliation Index

2020 2020 IEEE/MTT-S International Microwave Symposium (IMS)  
Kalkavage, Elad Siman-Tov C Covert Photonics-Enabled Millimeter-Wave Transmitter InAlN/GaN-on-Si HEMT with 4.5W/mm in a 200-mm CMOS-Compatible MMIC Process for 3D Integration MIT Lincoln Laboratory  ...  Perry, Gianni Pinelli, Corey Stull, Shireen Warnock, Donna-Ruth Yost, Beijia Zhang InAlN/GaN-on-Si HEMT with 4.5W/mm in a 200-mm CMOS-Compatible MMIC Process for 3D Integration Machine Learning for Accelerated  ... 
doi:10.1109/ims30576.2020.9223885 fatcat:r7efh7ktevgorc24r4l4vpf3nu

Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review

Zheng Gong
2021 Nanomaterials  
In this review, we summarize such transfer techniques for heterogeneous integration of ultrathin semiconductor layers or chips to a receiving substrate for many applications, such as microdisplays and  ...  Hetero-integration of functional semiconductor layers and devices has received strong research interest from both academia and industry.  ...  Introduction Semiconductor materials and devices are the building blocks for most of modern electronics and integration circuits.  ... 
doi:10.3390/nano11040842 pmid:33806237 pmcid:PMC8065746 fatcat:gyhdvsbtlzdtply2wrns42y6le

Workshop and Short Courses - IMS2015

Telesphor Kamgaing, Joe Staudinger
2015 IEEE Microwave Magazine  
Further, the current trends and the state-of-the-art developments in heterogeneously integrated circuits (up to 250 GHz) including integration of InP-HBT on Si BiCMOS, and integration of GaN-HEMT and InP-HBT  ...  The new wafer-level heterogeneously integrated circuit combines III-V semiconductor with Si technology, which allows taking advantage of the high-frequency performance of InP and high power and broadband  ... 
doi:10.1109/mmm.2015.2389138 fatcat:fvz66gv4wndcji3zaulykqtdle

2020 Index IEEE Transactions on Electron Devices Vol. 67

2020 IEEE Transactions on Electron Devices  
of Charge Partitioning on IM3 Prediction in SOI-LDMOS Transistors; 606-613 Gupta, S.K., see Liang, Y., 1297-1304 Gupta, S.K., see Thakuria, N., TED Nov. 2020 4866-4874 Gupta, S.K., see Thakuria, N  ...  Degradation in N-Channel Gate-All-Around Nanowire FETs; TED Jan. 2020 4-10 Gupta, C., Gupta, A., Vega, R.A., Hook, T.B., and Dixit, A., Impact of Hot-Carrier Degradation on Drain-Induced Barrier Lowering  ...  ., +, TED Dec. 2020 5646-5652 Millimeter wave integrated circuits Gallium Nitride and Silicon Transistors on 300 mm Silicon Wafers Enabled by 3-D Monolithic Heterogeneous Integration.  ... 
doi:10.1109/ted.2021.3054448 fatcat:r4ertn5jordkfjjvorvss7n6ju

Nanowire photonics

Ruoxue Yan, Daniel Gargas, Peidong Yang
2009 Nature Photonics  
allowed development of a broad range of inorganic nanowire compositions (for example, Si, Ge, ZnO, CdS, GaN, GaAs and InP), including group iv 10, 11 , ii-vi 12, 13 and iii-v 14, 15 compound and  ...  highly integrated 2D or 3D heterogeneous material systems with high spatial and angular precision remains a major challenge, relying heavily on post-synthesis integration of various nanowires.  ...  acknowledgements The authors would like to acknowledge here contributions of members of our research group and collaborators on this nanowire photonics programme.  ... 
doi:10.1038/nphoton.2009.184 fatcat:apchj22c3banfcqppsdkub4kq4

2020 Index IEEE Journal of Selected Topics in Quantum Electronics Vol. 26

2020 IEEE Journal of Selected Topics in Quantum Electronics  
-Oct. 2020 6101011 III-V-on-Silicon Integration: From Hybrid Devices to Heterogeneous Pho- tonic Integrated Circuits.  ...  -Oct. 2020 1700209 Integrated circuit interconnections A Sub-pJ/Bit, Low-ER Mach-Zehnder-Based Transmitter for Chip-to-Chip Optical Interconnects.  ... 
doi:10.1109/jstqe.2020.3048204 fatcat:6feiciybzraibah57mi7up6ph4

Semiconductor Wires and Ribbons for High- Performance Flexible Electronics

Alfred J. Baca, Jong-Hyun Ahn, Yugang Sun, Matthew A. Meitl, Etienne Menard, Hoon-Sik Kim, Won Mook Choi, Dae-Hyeong Kim, Young Huang, John A. Rogers
2008 Angewandte Chemie International Edition  
Images of a printed array of three-dimensional, heterogeneously integrated electronic devices that use ms-Si, ms-GaN, and singlewalled carbon nanotubes printed on a polyimide substrate collected with a  ...  , carbon, and III-V compounds such GaAs, InP, and GaN are of particular interest.  ... 
doi:10.1002/anie.200703238 pmid:18615769 fatcat:r34bdrb7i5f5ncxiecl4szgcuy

2021 Microwave Week Workshops

Kaushik Sengupta, Glenn D. Hopkins, Danilo Manstretta, Mona Mostafa Hella, Patrick Roblin
2021 IEEE Microwave Magazine  
Talks will focus on the development of digital beamformers as well as the efficient implementation and packaging of MIMO arrays at RF and mm-wave systems.  ...  The goal of this workshop will be to present state-of-the-art radio circuits and systems exploiting MIMO and digital beamforming for both civilian 5G New Radio (NR) and defense applications.  ...  State-of-the-art performance for a broad range of cuttingedge mm-wave-THz (0.1-1-THz) technologies, such as Si (CMOS-bipolar CMOS) and III-V [GaAs, indium phosphide (InP), and GaN], will be presented.  ... 
doi:10.1109/mmm.2021.3057181 fatcat:bb4dfrxv3rcklowe4fu6cttyiu
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