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The Impact of Temperature and Switching Rate on Dynamic Transients of High Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation

Saeed Jahdi, Mohammad Hedayati, Bernard H. Stark, Phil H. Mellor
2019 IEEE transactions on industrial electronics (1982. Print)  
CONCLUSION A comprehensive range of dynamic transient measurements are presented in this paper, along with validation of an analytical model for the switchings of high voltage silicon and 4H-SiC NPN BJTs  ...  Fig. 7 . 7 The voltage transient time for silicon & 4H-SiC NPN BJT at 800 V at (A) turn-on & (B) turn-off, in a range of R Base and temperatures.  ... 
doi:10.1109/tie.2019.2922918 fatcat:zcu276vxbferjbym7nesbm2xbe

Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs

Chengjun Shen, Saeed Jahdi, Juefei Yang, Olayiwola Alatise, Jose Ortiz-Gonzalez, Ruizhu Wu, Phil Mellor
2022 IEEE Open Journal of the Industrial Electronics Society  
The 4H-SiC vertical NPN BJTs are attractive power devices with potentials to be used as high power switching devices with high voltage ratings in range of 1.7 kV and high operating temperatures.  ...  In this paper, the advantages of the 4H-SiC NPN BJTs in terms of switching transients and current gain over their silicon counterparts is illustrated by means of extensive experimental measurements and  ...  CONCLUSION In this paper, high voltage measurements of dynamic transient characteristics, DC current gain, and current sharing among paralleled Silicon and 4H-SiC NPN BJTs are presented, together with  ... 
doi:10.1109/ojies.2022.3143946 fatcat:7imj4fw2kfeppjrlzmjdofvbeu

An Analysis of the Switching Performance and Robustness of Power MOSFETs Body Diodes: A Technology Evaluation

Saeed Jahdi, Olayiwola Alatise, Roozbeh Bonyadi, Petros Alexakis, Craig A. Fisher, Jose A. Ortiz Gonzalez, Li Ran, Philip Mawby
2015 IEEE transactions on power electronics  
His research interests include modelling of 4H-SiC power devices, and the fabrication and characterisation of 4H-SiC devices for high voltage (>10 kV) and high temperature (>300 • C) applications. focusing  ...  Figure 12 shows the calculated body diode switching energy for the 3 technologies as a function of temperature and the switching rate for the (a) SiC MOSFET, (b) the silicon power MOSFET and (c) the CoolMOS  ...  The final version of record is available at  ... 
doi:10.1109/tpel.2014.2338792 fatcat:vyz4mtunv5frzpcd4qb5oojnba

Prospects and Challenges of 4H-SiC Thyristors in Protection of HB-MMC-VSC-HVDC Converters

Chengjun Shen, Saeed Jahdi, Olayiwola Alatise, Jose Angel Ortiz Gonzalez, Avinash Aithal, Philip Mellor
2021 IEEE Open Journal of Power Electronics  
However, silicon thyristors are also at risk of failure due to the capacitor voltage collapse at high junction temperatures caused due to imbalanced reverse recovery current conduction.  ...  equal share of reverse voltage on all thyristors.  ...  The authors would like to acknowledge the technical and financial support of the EA Technology ® and the EPSRC Supergen Offshore Renewable Energy (ORE) Hub for this research.  ... 
doi:10.1109/ojpel.2021.3060942 fatcat:ah2ppl7c35bt7dmx67d4n2pope

Review and analysis of SiC MOSFETs' ruggedness and reliability

Jun Wang, Jiang Xi
2019 IET Power Electronics  
The objective of this study is to provide a comprehensive picture on the ruggedness and reliability of commercial SiC MOSFETs, discover their failure or degradation mechanism, and propose some possible  ...  The reliability issues include gate oxide reliability, degradation under high-temperature bias stress, repetitive SC stress, avalanche stress, power cycling stress, body diode's surge current stress, and  ...  Acknowledgments This work was supported by the Science and Technology Major Project of Hunan Province. (Project No. 2017GK1020).  ... 
doi:10.1049/iet-pel.2019.0587 fatcat:q6gcwn6kyzd3vg3x6h5qspnitu

2019 Index IEEE Transactions on Nuclear Science Vol. 66

2019 IEEE Transactions on Nuclear Science  
., Haefner, A., Mihailescu, L., and Vetter, K., Real-Time Free-Moving Active Coded Mask 3D Gamma-Ray Imaging; TNS Oct. 2019 2252-2260 Hemmick, T.K., see 1984-1992 Hengzhou, Y., Jianjun, C., Bin, L.,  ...  Yaqing, C., Xi, C., and Yang, G  ...  ., +, TNS July 2019 1548-1556 Using a Temperature-Switching Approach to Evaluate Low-Dose-Rate Ion- izing Radiation Effects on SET in Linear Bipolar Circuits.  ... 
doi:10.1109/tns.2020.2968047 fatcat:xsr2iqdrpjadrcrghycnfaxqwy

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

J. Y. Tsao, S. Chowdhury, M. A. Hollis, D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar, S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo (+21 others)
2017 Advanced Electronic Materials  
the state of their science and technology.  ...  These research opportunities and challenges emerged from a workshop, The Second Technical Exchange on Ultrawide-bandgap Semiconductors: Research Opportunities and Directions, held in Arlington, VA, April  ...  Acknowledgments We acknowledge support from the National Science Foundation (NSF, Dimitris Pavlidis), the Army Research Office (ARO, Joe Qiu), the Air Force Office of Scientific Research (AFOSR, Ken Goretta  ... 
doi:10.1002/aelm.201600501 fatcat:u47te6dov5aj5mz22n6gcr6xcq

Computational Electronics

Dragica Vasileska, Stephen M. Goodnick
2006 Synthesis Lectures on Computational Electromagnetics  
One unique feature of this book is a specific focus on numerical examples, particularly the use of commercially available software in the TCAD community.  ...  The prerequisite knowledge is a fundamental understanding of basic semiconductor physics, the physical models for various device technologies such as pn diodes, bipolar junction transistors, and field  ...  The cut-in voltage is usually between 600 mV and 700 mV for silicon-based BJTs.  ... 
doi:10.2200/s00026ed1v01y200605cem006 fatcat:fyti5u2gizbyxjnpgsadhph7uq

2019-2020 Index IEEE Transactions on Industrial Electronics Vol. 67

2020 IEEE transactions on industrial electronics (1982. Print)  
Hao, Q., Design, Implementation, and Evaluation of a Neural-Network-Based Quadcopter UAV System; TIE March 2020 2076-2085 Jiang, J., Mohagheghi, A., and Moallem, M., Energy-Efficient Supplemental LED  ...  for Gesture Recognition on the Back of the Hand; TIE Jan. 2020 647-657 Jiang, S., see Lyu, X., 1626-1637 Jiang, S., see Wang, K., TIE May 2020 3350-3360 Jiang, W., Wang, P., Ma, M., Wang, J., Li, J.,  ...  ., +, TIE Feb. 2020 1648-1656 The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation.  ... 
doi:10.1109/tie.2020.3045338 fatcat:gljm7ngg3fakvmnfswcbb5vwiu


Lei Lin, Lei Lin
The improvement in material technology has made 4H-Silicon Carbide (SiC) a promising material for power electronics applications.  ...  A relatively large area, high voltage 4H-SiC GTO that exhibits encouraging characteristic at the on-and off-state, low leakage current and high yield is presented.  ...  Fig. 3- 8 8 Turn-on and turn-off transients of the 4H-SiC GTO.  ... 

Samuel Vasconcelos Araújo On the Perspectives of Wide-Band Gap Power Devices in Electronic-Based Power Conversion for Renewable Systems 3 Elektrische Energiesysteme Elektrische Energiesysteme Band 3 Herausgegeben von Kompetenzzentrum für Dezentrale Elektrische Energieversorgungstechnik On the Perspectives of Wide-Band Gap Power Devices in Electronic-Based Power Conversion for Renewable Systems

Samuel Araújo, Fachgebiet Energieversorgungssysteme, Samuel Araújo
In addition to this, a benchmarking of several SiC-based devices technologies rated for 1200 V and 1700 V will be performed against their state-of-the-art Silicon-counterparts.  ...  The advent of power devices based on silicon carbide (SiC) and gallium nitride (GaN) is currently pointing in the direction of a second revolution, where several paradigms concerning the design and performance  ...  A multitude of switch technologies based on Silicon-Carbite (SiC) and Gallium- Nitride (GaN) is currently being commercially introduced by manufactures around the globe.  ... 

Composite power semiconductor switches for high-power applications [article]

Ross Ellis Mathieson, University Of Edinburgh, Stephen Finney, Michael Merlin
This includes a head-to-head comparison of the two high-capacity devices in terms of their losses and switching characteristics.  ...  This thesis investigates the switching performance of the two main semiconductor switches used in high-power applications — the well-established Silicon (Si)-Insulated-Gate Bipolar Transistor (IGBT) and  ...  and the impact of switching frequency. 6 .2: SiC-MOSFET junction temperature, varying switching frequency.  ... 
doi:10.7488/era/1608 fatcat:blwhddm74vcojgf4em4xugguuy

Vice President in Research of Maejo University MAEJO INTERNATIONAL JOURNAL OF SCIENCE AND TECHNOLOGY The International Journal for the Rapid Publication of Preliminary Communications in

James Maxwell, Morakot Sukchotiratana, Jirawan Banditpuritat, E Dallas, Alston, Pei-Yi Chu, Changhua, Christian Hospital, Taiwan Asst, Chukeatirote, L Richard, Deming (+24 others)
Journal Information Maejo International Journal of Science and Technology   unpublished
authors the chance to communicate with a wide range of readers in an international community.  ...  Intended as a medium for communication, discussion, and rapid dissemination of important issues in Science and Technology, articles are initially published online in an open access format, thereby giving  ...  Duang Buddhasukh and Assist. Prof. Chanakun Chitmanat for correcting the manuscript. The Faculty of Fisheries Technology and Aquatic Resources has kindly provided facilities for this research.  ... 

Trace: Tennessee Research and Creative Exchange Design and Analysis of a Fully-Integrated Resonant Gate Driver

Doctoral Dissertations, Yu Long
2016 unpublished
In this research, a customized resonant gate driver IC was designed and developed on a commercially-available silicon CMOS process.  ...  Using synchronous timing control within the driver integrated circuit, the power device gate voltage is securely clamped within the expected gate voltage at switching frequencies beyond 10 MHz.  ...  This circuit is actually a NPN BJT transistor which can turn on at less than 1 V to pull down the power device.  ...