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Spin-glass-like behavior of Ge:Mn
2006
Physical Review B
For Ge_0.96Mn_0.04, ac susceptibility measurements show a peak around T_f, with the peak position T'_f shifting as a function of the driving frequency f by Delta T_f' / [T_f' Delta log f] 0.06, whereas ...
f Ј is C 2 = ͑T f Ј− T f 0 ͒ / T f Ј. ...
Likewise, M 2 ͑t͒ corresponds to t Ͼ t 2 ͓Fig. 5͑a͔͒ and M 3 ͑t͒ describes the results for t Ͼ t 3 of experiments following the second procedure ͓Fig. 5͑b͔͒. ...
doi:10.1103/physrevb.74.045330
fatcat:5odl2c34jzdpzho33ww5pvcrsm
All-optical high-speed signal processing with silicon–organic hybrid slot waveguides
2009
Nature Photonics
A 2.2m long sample of lead-silicate W-index profile fiber with nonlinear coefficient of 820W -1 km -1 and exhibiting low and flat dispersion across the C-band is used in an all-optical 160to-40Gbit/s demultiplexing scheme based on four-wave-mixing.
doi:10.1038/nphoton.2009.25
fatcat:6b7qatyqcjh7za3hntj7xkgxgi
Structural and magnetic properties of Mn5Ge3 clusters in a dilute magnetic germanium matrix
2006
Applied Physics Letters
The transition temperature of the second magnetic phase T C Ϸ 290 K corresponds to the value T C = 296 K reported for the intermetallic compound Mn 5 Ge 3 . 16 The M͑H͒ hysteresis loops in Fig. 3͑b͒ ...
FIG. 3 . 3 Temperature dependence of the magnetization measured at 1 mT and 0.1 T for the magnetic field oriented in the epilayer. ͑b͒ Hysteresis loops at T = 5 K for the magnetic field oriented in ͑•͒ ...
doi:10.1063/1.2185448
fatcat:p5jbrprdbvaezf2v4i7kw7rfry
Highly nonlinear silicon photonics slot waveguides without free carrier absorption related speed-limitations
2008
2008 34th European Conference on Optical Communication
Figure 2 : 2 (a) Change of transmission ΔT and (b) phase in a strip waveguide with pronounced Kerr and FCA nonlinearities for different input powers. ...
With the effective length L and the wavelength λ, the change of refractive index can be calculated from Δn = −Δϕλ / (2πL) , (time dependency exp(jωt)). ...
doi:10.1109/ecoc.2008.4729411
fatcat:6pnijgogpbff7jpdrkegewajhm
Linear semiconductor optical amplifiers for amplification of advanced modulation formats
2012
Optics Express
Figure 6 (a) depicts a transmitted reference constellation point E t,i ( ) and the actually received and measured signal vector E r,i ( × ), which deviates by an error vector E err,i from the reference ...
If the signal power reduces at time t 0 , Fig. 2(b) , the gain starts recovering from its operating point described by a saturated chip gain G Op (given by the average input power) towards the unsaturated ...
doi:10.1364/oe.20.009657
pmid:22535057
fatcat:dwpqq4lbebfpflocjssvpthghi
Silicon high-speed electro-optic modulator
2010
7th IEEE International Conference on Group IV Photonics
A 40 Gbit/s electro-optic modulator is demonstrated. The modulator is based on a slotted silicon waveguide filled with a nonlinear organic material. A modulation voltage-length product of V π L = 0.21 Vcm can be achieved.
doi:10.1109/group4.2010.5643383
fatcat:q4lrsnj5ijfmffsj5z7ec3l6bm
40 Gbit/s silicon-organic hybrid (SOH) phase modulator
2010
36th European Conference and Exhibition on Optical Communication
A 40 Gbit/s electro-optic modulator is demonstrated. The modulator is based on a slotted silicon waveguide filled with an organic material. The silicon organic hybrid (SOH) approach allows combining highly nonlinear electro-optic organic materials with CMOS-compatible silicon photonics technology.
doi:10.1109/ecoc.2010.5621210
fatcat:o4zatvkvcvfaboabhpaavsnmbm
The Input Power Dynamic Range of a Semiconductor Optical Amplifier and Its Relevance for Access Network Applications
2011
IEEE Photonics Journal
The input power dynamic range (IPDR) of a semiconductor optical amplifier (SOA) gives the input power range within which an SOA can be operated error free. It is among the most important parameters describing the usability range of an SOA in an access network. In this paper, we give design guidelines to maximize the IPDR at a given gain. Our IPDR description indicates that a large IPDR can be obtained if SOAs are designed properly. A particular large IPDR is predicted to be found for
doi:10.1109/jphot.2011.2172787
fatcat:uaouaxwqmzc2jii75eh4b2l7tu
more »
... ed quantum-dot (QD)-SOAs. We apply both theory and experiment to a 1.3-m QD-SOA and investigate the IPDR as a function of bitrate, wavelength, and bias current. Large IPDRs of 41 and 36 dB are found for single-channel experiments with a signal quality of Q 2 ¼ 12:6 dB at 2.5 and 40 Gbit/s, respectively.
Silicon nanophotonics and silicon-organic hybrid (SOH) integration
2011
2011 XXXth URSI General Assembly and Scientific Symposium
Silicon nanophotonics is considered a key enabler of future photonic-electronic information processing systems. Driven by substantial research investments, photonic integration on silicon-on-insulator (SOI) substrates has reached a degree of maturity that already permits industrial adoption. Silicon-organic hybrid integration (SOH) is a viable extension of the SOI material system for efficient electro-optic modulation and ultrafast all-optical signal processing.
doi:10.1109/ursigass.2011.6050595
fatcat:3lrxh226ejawxkel3h43ain5le
All-optical wavelength conversion using cross-phase modulation at 42.7 Gbit/s in silicon-organic hybrid (SOH) waveguides
2009
2009 International Conference on Photonics in Switching
Error-free wavelength conversion using crossphase modulation (XPM) is shown in a passive 4 mm long silicon-organic hybrid waveguide. This is the first XPM demonstration in a CMOS compatible chip for bitrates of 42.7 Gbit/s at communication wavelengths.
doi:10.1109/ps.2009.5307823
fatcat:4styp64iyjfcfgsuqapodk35ey
26 Tbit s−1 line-rate super-channel transmission utilizing all-optical fast Fourier transform processing
2011
Nature Photonics
c /(T S þ t c ) of 20%, 28% and 33%. ...
Further, this corresponds to a cyclic prefix of CP ¼ t c /(T S þ t c ) ¼ 28% (ref. 25) , that is, 28% of the resulting reciprocal symbol rate. ...
doi:10.1038/nphoton.2011.74
fatcat:2jyn24muyrdldbgrgtilgtktf4
100 Gbit/s electro-optic modulator and 56 Gbit/s wavelength converter for DQPSK data in silicon-organic hybrid (SOH) technology
2010
IEEE Photonics Society Summer Topicals 2010
CMOS-compatible silicon photonics combined with covers of (2) or (3) -nonlinear organic material allows electrooptic modulators and all-optical wavelength converters for data rates of 100 Gbit/s and beyond. The devices are not impaired by free carriers.
doi:10.1109/phosst.2010.5553664
fatcat:llmf6uevv5firiyz6yzv6nwnry
Optical injection locking to optical frequency combs for superchannel coherent detection
2015
Optics Express
[Crossref] [PubMed] Vallaitis, T. D. Hillerkuss, R. Schmogrow, T. Schellinger, M. Jordan, M. Winter, G. Huber, T. Vallaitis, R. Bonk, P. Kleinow, F. Frey, M. Roeger, S. Koenig, A. Ludwig, A. ...
[Crossref] Ellermeyer, T. D. Hillerkuss, R. Schmogrow, T. Schellinger, M. Jordan, M. Winter, G. Huber, T. Vallaitis, R. Bonk, P. Kleinow, F. Frey, M. Roeger, S. Koenig, A. Ludwig, A. Marculescu, J. ...
doi:10.1364/oe.23.001547
pmid:25835912
fatcat:jal5vgw34zhtfazxvpcuocff7u
Page 174 of ABA Journal Vol. 27, Issue 3
[page]
1941
ABA Journal
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All-Optical Signal Processing with Silicon-Organic Hybrid Slot Waveguides
2010
Integrated Photonics Research, Silicon and Nanophotonics and Photonics in Switching
unpublished
The silicon-organic hybrid (SOH) platform is reviewed. The SOH approach is a promising CMOS compatible photonic platform enabling ultrafast nonlinear signal processing in compact silicon photonic devices.
doi:10.1364/iprsn.2010.iwc1
fatcat:pqb6luiflbhshdzhvbucfvhxza
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