Filters








71 Hits in 5.8 sec

Temperature impact on reliability of power RF devices under S-band pulsed-RF test

M. A. Belaid, M. Tlig
2020 SN Applied Sciences  
The temperature effect on the parameters of power RF LDMOS (Radio Frequency Laterally Diffused-Metal-Oxide-Semiconductor) devices is highlighted.  ...  This paper presents an innovative reliability bench of aging life tests designed to high power RF applications for device lifetime under pulse conditions.  ...  Conclusion and prospects In this study, a comparative result has been done to reliability of power RF LDMOS device by two accelerated aging tests.  ... 
doi:10.1007/s42452-020-2708-1 fatcat:fs3w6rba2fhqlkh5nd7ewd2wmm

Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal–Oxide–Semiconductor Transistors

Kun-Ming Chen, Zong-Wen Mou, Hao-Chung Kuo, Chia-Sung Chiu, Bo-Yuan Chen, Wen-De Liu, Ming-Yi Chen, Yu-Chi Yang, Kai-Li Wang, Guo-Wei Huang
2012 Japanese Journal of Applied Physics  
The hot-carrier stress effects on the high-frequency performance characteristics of laterally diffused metal-oxide-semiconductor (LDMOS) transistors were investigated.  ...  Finally, S-parameter variations under hot-carrier stress were also examined in this study. The observations of S-parameter variations are important for RF power amplifier design. #  ...  This work was supported in part by the National Science Council of R.O.C. through contracts NSC99-2221-E-492-027-MY2.  ... 
doi:10.1143/jjap.51.02bc12 fatcat:ii2uocc7gbfm7fpzn7ry3jqho4

Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal–Oxide–Semiconductor Transistors

Kun-Ming Chen, Zong-Wen Mou, Hao-Chung Kuo, Chia-Sung Chiu, Bo-Yuan Chen, Wen-De Liu, Ming-Yi Chen, Yu-Chi Yang, Kai-Li Wang, Guo-Wei Huang
2012 Japanese Journal of Applied Physics  
The hot-carrier stress effects on the high-frequency performance characteristics of laterally diffused metal-oxide-semiconductor (LDMOS) transistors were investigated.  ...  Finally, S-parameter variations under hot-carrier stress were also examined in this study. The observations of S-parameter variations are important for RF power amplifier design. #  ...  This work was supported in part by the National Science Council of R.O.C. through contracts NSC99-2221-E-492-027-MY2.  ... 
doi:10.7567/jjap.51.02bc12 fatcat:g73lrnknfvdxjd7dpf53vmtzye

Reliability study of power RF LDMOS device under thermal stress

M.A. Belaïd, K. Ketata, K. Mourgues, M. Gares, M. Masmoudi, J. Marcon
2007 Microelectronics Journal  
This paper presents the results of comparative reliability study of two accelerated ageing tests for thermal stress applied on power RF LDMOS: Thermal Shock Tests (TST, air-air test) and Thermal Cycling  ...  Tests (TCT, airair test) under various conditions (with and without DC bias, TST cold and hot, different extremes temperatures T).  ...  POWER RF LDMOS EXPERIMENTAL CHARACTERIZATION It is essential to characterize power RF LDMOS in order to extract parameters before and after device stress.  ... 
doi:10.1016/j.mejo.2006.08.004 fatcat:2b3qsu527beivcjfhfrmzcnycm

Accurate LDMOS Model Extraction Using DC, CV and Small Signal S Parameters Measurements for Reliability Issues [chapter]

Mouna Chetibi-Riah, Mohamed Masmoudi, Hichame Maanane, Jrme Marcon, Karine Mourgues, Mohamed Ketata, Philippe Eudeline
2009 Micro Electronic and Mechanical Systems  
RF-figures of merit such as f t , f max and power gain of RF LDMOS show significant vulnerability to the self heating and hot-carrier effects.  ...  and the effect of self-heating and channel hot carrier on the DC and RF performances of silicon RF LDMOSFETs.  ...  Reliability issues concerning both electronic and mechanical aspects of these devices and systems are also addressed in various chapters.  ... 
doi:10.5772/7015 fatcat:tkkktcn43nfxrbstf5vunu35da

Impact of Self-Heating Effect on Hot Carrier Degradation in High-Voltage LDMOS

Chih-Chang Cheng, J.F. Lin, Tahui Wang, T.H. Hsieh, J.T. Tzeng, Y.C. Jong, R.S. Liou, Samuel C. Pan, S.L. Hsu
2007 2007 IEEE International Electron Devices Meeting  
The device was processed in a 0. 18tm CMOS technology with a gate oxide thickness of 100nm and a channel length of Self-heating induced transient hot carrier effects in high-3m.TeorainvlgsaeVgOVndV4V.o  ...  T -mensiona disimution is performed to calculate a temperature distribution and self-heating effect. corresponding hot carrier effects.  ...  Hill, "The Effect of Transient self-heating effect in AC hot carrier stress in Temperature on Lateral DMOS Transistors in a Power IC Technology," LDMOS has been studied by measuring an internal voltage  ... 
doi:10.1109/iedm.2007.4419090 fatcat:tpgmggcbezfztgcxomnumtrdom

A zero-cost technique to improve ON-state performance and reliability of power LDMOS transistors

Kumari Neeraj Kaushal, Nihar R. Mohapatra
2021 IEEE Journal of the Electron Devices Society  
reliability of LDMOS transistors without any penalty on the OFF-state performance.  ...  In this paper, we have proposed a simple and zero-cost technique to improve ON-state and reliability performance of LDMOS transistors.  ...  ACKNOWLEDGMENT The authors would like to thank Semiconductor Laboratory (SCL, Department of Space, Government of India) for their support in device fabrication.  ... 
doi:10.1109/jeds.2021.3059854 fatcat:ryqo7b7xjva7xknvz5lamrwvmy

High-performance Silicon-On-Glass VDMOS Transistor for RF-Power Applications

N. Nenadovic, W. Cuoco, M.P. van de Heijden, L.K. Nanver, J.W. Slotboom, S.J. Theeuwen, H.F. Jos
2002 32nd European Solid-State Device Research Conference  
A complete analysis of DC and RF performance of a novel SOI vertical DMOS transistor on glass and a conventional LDMOS transistor for RF power applications is presented.  ...  Since this SOI VDMOS device shows better linearity and higher power gain compared to conventional LDMOST, it would be the device of choice for RF power applications.  ...  Although, these devices show very good RF performance, reliability issues have to be addressed as, for instance gate oxide degradation due to hot carrier generation and self-heating effects.  ... 
doi:10.1109/essderc.2002.194948 fatcat:gn3iwvjzdjdzlchn6ns4wr6oai

Design of a Novel W-Sinker RF LDMOS

Xiangming Xu, Han Yu, Jingfeng Huang, Chun Wang, Wei Ji, Zhengliang Zhou, Ying Cai, Yong Wang, Pingliang Li, Peng-Fei Wang, David Wei Zhang
2015 Advances in Condensed Matter Physics  
A novel RF LDMOS device structure and corresponding manufacturing process are presented in this paper.  ...  Combined with the adoption of the techniques, like grounded shield, step gate oxide, LDD optimization, and so forth, an advanced technology for RF LDMOS based on conventional 0.35 μm CMOS technology is  ...  The authors would also like to give great thanks to Dajie Zeng and Nan Liu from Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, for supporting RF measurement and ruggedness  ... 
doi:10.1155/2015/312646 fatcat:ozf7lo2t2baltisgdliagrm5g4

Fast physical models for Si LDMOS power transistor characterization

John P. Everett, Michael J. Kearney, Hernan A. Rueda, Eric M. Johnson, Peter H. Aaen, John Wood, Christopher M. Snowden
2011 2011 IEEE MTT-S International Microwave Symposium  
A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a "current-driven" form.  ...  A new quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors.  ...  voltages, V BR, low on-state resistance, R ds(on) , and good Hot Carrier Injection (HCI) reliability.  ... 
doi:10.1109/mwsym.2011.5972839 fatcat:c2ykfbw7anetnj7x5237pyikbq

Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect

Haifeng Mo, Yaohui Zhang, Helun Song
2019 Active and Passive Electronic Components  
The adjacent channel power ratio is decreased by 2 dBc; 12% more power can be discharged before the NPN transistor turn-on, indicating a better linearity and robustness.  ...  The high electric field at the drift region near the drain will cause more electron-hole pairs generated to trigger the parasitic NPN transistor turn-on, which may cause failure of device.  ...  Conflicts of Interest The authors declare that there are no conflicts of interest regarding the publication of this paper. Acknowledgments  ... 
doi:10.1155/2019/8425198 fatcat:i54k36z3gvhfdpehimk6zpcll4

A Review of Watt-Level CMOS RF Power Amplifiers

Ted Johansson, Jonas Fritzin
2014 IEEE transactions on microwave theory and techniques  
High output power can also be reached by the use of on-chip matching and power combination, commonly using on-chip transformers.  ...  This paper reviews the design of watt-level integrated CMOS RF power amplifiers (PAs) and state-of-the-art results in the literature.  ...  The authors would like to acknowledge Duncan Platt and Michael Salter for value comments on the manuscript.  ... 
doi:10.1109/tmtt.2013.2292608 fatcat:3oqsbp3izrf5rmy3kxwtswcan4

Optimization of Integrated Transistors for Very High Frequency DC–DC Converters

Anthony D. Sagneri, David I. Anderson, David J. Perreault
2013 IEEE transactions on power electronics  
It is further demonstrated that hot-carrier limits on device safe operating area may be relaxed under soft switching, yielding significant further loss reduction.  ...  A method of finding an optimal layout for a given converter application is developed and experimentally verified in a 50 MHz converter, resulting in a 54% reduction in power loss over a hand-optimized  ...  For LDMOS power devices hot carrier reliability, SOA, and R DS−ON are tradeoffs [22] , [23] controlled primarily via the drain drift region.  ... 
doi:10.1109/tpel.2012.2222048 fatcat:milml3arwnfdhhwa27oglzaakq

RF Power Performance of Asymmetric-LDD MOS Transistor for RF-CMOS SOC Design

Ming-Chu King, Tsu Chang, Albert Chin
2007 IEEE Microwave and Wireless Components Letters  
These significant improvements of RF power performance by this new MOS transistor make the RF-CMOS system-on-chip design a step further.  ...  The radio frequency (RF) power performance of both conventional and asymmetric MOS transistor is measured and compared. The output power can be improved by 38% at peak power-added efficiency (PAE).  ...  Chiu, National Nano Device Laboratories, for their assistance and support.  ... 
doi:10.1109/lmwc.2007.897796 fatcat:bsdtb5ymtbdltpr5hu7zc7jery

An Integrated DC/DC Converter with Online Monitoring of Hot-Carrier Degradation

Matteo Pizzotti, Marco Crescentini, Andrea Natale Tallarico, Aldo Romani
2019 2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS)  
An integrated DC/DC converter with online monitoring of the degradation level of power MOSFETs due to hot-carrier injection (HCD) is proposed.  ...  In fact, the correlation between an increase in on-resistance of power switches and HCD is fully documented, and it can be exploited to perform an estimation of degradation.  ...  A widely studied deterioration pattern in double-diffused MOS (LDMOS) transistors can be associated with the degradation induced by hot-carrier stress (HCD), whose main effect is to produce an increase  ... 
doi:10.1109/icecs46596.2019.8964721 dblp:conf/icecsys/PizzottiCTR19 fatcat:dlpde7nqgjcv7pgx34f4hb7zhq
« Previous Showing results 1 — 15 out of 71 results