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Nanoscale CMOS

H.-S.P. Wong, D.J. Frank, P.M. Solomon, C.H.J. Wann, J.J. Welser
1999 Proceedings of the IEEE  
Solomon is a member of APS. on GaAs devices, and a postdoctoral position at Stanford University (1995), where he continued his thesis research on SiGe materials and their applications to MOSFET devices  ...  Watson Research Center, and his current research activities focus on novel silicon devices, including vertical transistors and nanostructures, for a variety of memory applications.  ...  ACKNOWLEDGMENT The authors would like to acknowledge the contributions of the Silicon Innovation Laboratory for fabricating the devices described in this paper.  ... 
doi:10.1109/5.752515 fatcat:siz3jry7hjctlkjesyr5s6vh2m

β-Gallium oxide power electronics

Andrew J. Green, James Speck, Grace Xing, Peter Moens, Fredrik Allerstam, Krister Gumaelius, Thomas Neyer, Andrea Arias-Purdue, Vivek Mehrotra, Akito Kuramata, Kohei Sasaki, Shinya Watanabe (+22 others)
2022 APL Materials  
This Roadmap presents the current state-of-the-art and future challenges in 15 different topics identified by a large number of people active within the gallium oxide research community.  ...  Due to the favorable intrinsic material properties of gallium oxide, namely, critical field strength, widely tunable conductivity, mobility, and melt-based bulk growth, the major targeted application space  ...  Overall, the impact of cooling is expected to be seen for dielectric layers with micrometer ROADMAP range thickness on top of the device channel with a thermal conductivity greater  ... 
doi:10.1063/5.0060327 fatcat:5o63vyzrgjbr3o7dqbh6h3j6wu

Optoelectronic switching of nanowire-based hybrid organic/oxide/semiconductor field-effect transistors

Eunhye Baek, Sebastian Pregl, Mehrdad Shaygan, Lotta Römhildt, Walter M. Weber, Thomas Mikolajick, Dmitry A. Ryndyk, Larysa Baraban, Gianaurelio Cuniberti
2014 Nano Reseach  
Along with the Si-based nanotechnology, the silicon compatible optical and chemical sensing applications have boosted the research on hybrid devices that combine the organic and inorganic materials.  ...  In the hybrid device, however, the gate material on the Si dioxide layer plays a significant role in the optoelectronic modulation of the FET device.  ...  nanowire with the same Vg applied on two different gate electrodes, is shown in Figure 2 .6 which is adapted from the analytic study of double gate MOSFET 20 .  ... 
doi:10.1007/s12274-014-0608-7 fatcat:yxzkssxg6zd67myh2lfrqpozym

Perylene-Diimide Molecules with Cyano Functionalization for Electron-Transporting Transistors

Mario Barra, Fabio Chiarella, Federico Chianese, Ruggero Vaglio, Antonio Cassinese
2019 Electronics  
Such features made these compounds the subject of study for several research groups aimed at developing electron-transporting (n-type) devices with superior charge transport performances.  ...  After about fifteen years since the first report, field-effect transistors based on PDI_CY thin films are still intensely investigated by the scientific community for the attainment of n-type devices that  ...  These devices were characterized using a fixed channel width (W = 2 µm) and sub-micrometer channel lengths L ranging from 140 nm to 1000 nm, which were patterned by means of electron beam lithography (  ... 
doi:10.3390/electronics8020249 fatcat:v4xeeuz4gzan3i4egbf7ffq7ly

30-100-GHz inductors and transformers for millimeter-wave (Bi)CMOS integrated circuits

T.O. Dickson, M.-A. LaCroix, S. Boret, D. Gloria, R. Beerkens, S.P. Voinigescu
2005 IEEE transactions on microwave theory and techniques  
Self-resonance frequencies (SRFs) beyond 100 GHz were obtained, demonstrating for the first time that spiral structures are suitable for applications such as 60-GHz wireless local area network and 77-GHz  ...  A stacked transformer is reported with 21 of 2.5 dB at 50 GHz, and which offers improved performance and less area (30 m 30 m) than planar transformers or microstrip couplers.  ...  Prokes, STMicroelectronics, Ottawa, ON, Canada, for measurement assistance.  ... 
doi:10.1109/tmtt.2004.839329 fatcat:u7zpbzlnuvbq7jgmlkzoxtg3ne

Towards Oxide Electronics: a Roadmap

M. Coll, J. Fontcuberta, M. Althammer, M. Bibes, H. Boschker, A. Calleja, G. Cheng, M. Cuoco, R. Dittmann, B. Dkhil, I. El Baggari, M. Fanciulli (+44 others)
2019 Applied Surface Science  
This paper focuses on a brief description of the state of the art and future prospects of high-k dielectrics for devices with logic functionalities.  ...  High-k dielectrics for CMOS and emerging logic devices M. Fanciulli 16. Oxide nano-electronics for neuromorphic computing J. Grollier 17.  ...  Nilsen is acknowledged for valuable discussions on the current status of ALD perovskites. Acknowledgements Author thanks fruitful discussions with Dr. J. Santiso.  ... 
doi:10.1016/j.apsusc.2019.03.312 fatcat:3rqm2kwuv5gk3dpmb4sv7mg6ui

Compact modeling of intrinsic capacitances in Double-Gate Tunnel-FETs

A. Farokhnejad, M. Graef, F. Horst, C. Liu, Q.T. Zhao, B. Iniguez, F. Lime, A. Kloes
2017 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)  
The EOT is given as [11, 86] : EOT = t hk · κ SiO 2 κ hk , (6.1) where t hk is the thickness of the oxide with high permittivity, κ SiO 2 is the dielectric constant of SiO2 and κ hk characterizes the  ...  However, the studies performed on the DG MOSFET compact model show that the equivalent l ch should be larger than the corresponding value in the structure to allow simulations of the gate-all-around MOSFET  ... 
doi:10.1109/ulis.2017.7962584 fatcat:v5zvst3upvfk7lotp4dfqfo23i

A review on high-resolution CMOS delay lines: towards sub-picosecond jitter performance

Bilal I. Abdulrazzaq, Izhal Abdul Halin, Shoji Kawahito, Roslina M. Sidek, Suhaidi Shafie, Nurul Amziah Md. Yunus
2016 SpringerPlus  
Delay lines also find applications in range imaging where a delayed light pulse is required to capture Abstract A review on CMOS delay lines with a focus on the most frequently used techniques for high-resolution  ...  Delay lines play a substantial role in many sub-systems of time interval measurement (TIM) circuits such as time-to-digital converters (TDCs) and digital-to-time converters (DTCs) for digitization of short  ...  Acknowledgements The authors would like to acknowledge Universiti Putra Malaysia (UPM) for contributing the facilities and funds under the research Grant Initiative GP-IPS/2014/9438713 for this work to  ... 
doi:10.1186/s40064-016-2090-z pmid:27104122 pmcid:PMC4828372 fatcat:52liq5xy4zcdlgthqemwsp7uhu

Computational Electronics

Dragica Vasileska, Stephen M. Goodnick
2006 Synthesis Lectures on Computational Electromagnetics  
The concept for this book originated from a first year graduate course on Computational Electronics, taught now for several years, in the Electrical Engineering Department at Arizona State University.  ...  One unique feature of this book is a specific focus on numerical examples, particularly the use of commercially available software in the TCAD community.  ...  Consider a 25 nm MOSFET device structure with SiO 2 oxide thickness of 1.2 nm and n + -polysilicon gate. The doping of the source and drain n + -regions equals 10 20 cm −3 .  ... 
doi:10.2200/s00026ed1v01y200605cem006 fatcat:fyti5u2gizbyxjnpgsadhph7uq

Future trends in microelectronics - reflections on the road to nanotechnology

1997 Precision engineering  
Send comment regarding this burden estimates or any other aspect of this collection of information, including suggestions for reducing this burden, to Washington Headquarters Services, Directorate for  ...  Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining  ...  We consider such grating structures particularly promising for future applications, and extensive studies of such structures are currently underway, to be reported in due course.  ... 
doi:10.1016/0141-6359(97)90048-9 fatcat:j7blw4wn6zbitmoqqffj46g54e

Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications

Ying Wang, Weijin Chen, Biao Wang, Yue Zheng
2014 Materials  
device applications.  ...  , as well as device applications.  ...  Yue Zheng also thanks support by the Fundamental Research Funds for the Central Universities, NCET in University, Research Fund for the Doctoral Program of Higher Education, Fok Ying Tung Foundation, Science  ... 
doi:10.3390/ma7096377 pmid:28788196 pmcid:PMC5456150 fatcat:5mgernrzrveltdzmcavm2teg6y

Mechanical and electrical characterization of CVD-grown graphene transferred on chalcogenide Ge 2 Sb 2 Te 5 layers

G. D'Arrigo, M. Christian, V. Morandi, G. Favaro, C. Bongiorno, A.M. Mio, M. Russo, A. Sitta, M. Calabretta, A. Sciuto, E. Piccinini, L. D'Urso (+1 others)
2018 Carbon  
The integration of medical devices within the surrounding tissues as well as tissue regeneration by tissue engineering constructs depend on the ability of the implanted biomaterials to control the activity  ...  In fact, in the case of polycrystalline films, depending on the synthetic route, we demonstrate the presence of both deep and shallow carrier traps.  ...  Therefore, combining different functions in a single smart biointerface for in vitro cell studies could help in understanding cell-material interactions.  ... 
doi:10.1016/j.carbon.2018.02.046 fatcat:wiqrs5krczgrrahoa7hl2rgtcm

Electric Double Layer Capacitor [chapter]

2016 Encyclopedia of Nanotechnology  
Synonyms Environmental toxicology; Nano-ecotoxicology; Toxicity of metal and metal oxide nanoparticles on Prokaryotes (bacteria), unicellular and invertebrate Eukaryotes Glossary EC 50 The half maximal  ...  LC 50 The lethal concentration 50 % is the dose required to kill half the members of a tested population for a test duration. It is a general indicator of a substance's acute toxicity.  ...  the Center for the Environmental Implications of NanoTechnology.  ... 
doi:10.1007/978-94-017-9780-1_100279 fatcat:bwewyikjfjckhfucz5ta2fhg7a

Electronic Properties [chapter]

2016 Encyclopedia of Nanotechnology  
Synonyms Environmental toxicology; Nano-ecotoxicology; Toxicity of metal and metal oxide nanoparticles on Prokaryotes (bacteria), unicellular and invertebrate Eukaryotes Glossary EC 50 The half maximal  ...  LC 50 The lethal concentration 50 % is the dose required to kill half the members of a tested population for a test duration. It is a general indicator of a substance's acute toxicity.  ...  the Center for the Environmental Implications of NanoTechnology.  ... 
doi:10.1007/978-94-017-9780-1_100299 fatcat:uafi4jywlrhfxdtcrlnvzgboti

Physics of SrTiO3-based heterostructures and nanostructures: a review

Yun-Yi Pai, Anthony Tylan-Tyler, Patrick Irvin, Jeremy Levy
2018 Reports on progress in physics (Print)  
The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures).  ...  Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.  ...  Three terminal devices, top-gated field-effect devices with a Si 3 N 4 gate dielectric, were made using O 2 ion-irradiation by Hurand et al. [300] .  ... 
doi:10.1088/1361-6633/aa892d pmid:29424362 fatcat:sb6z3pwo5bggxkyvf4lyzjoc6u
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