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Structured Bit-Interleaved LDPC Codes for MLC Flash Memory
2014
IEEE Journal on Selected Areas in Communications
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Due to a structural feature in the programming process of MLC (two bits per cell) and TLC (three bits per cell) flash memory, the majority of errors that occur are singlebit errors. ...
In this work we analyze binary regular LDPC codes in the standard bit-interleaved coded modulation implementation, assuming different probabilities on the bits, to determine what ratio of each type of ...
Structured Bit-Interleaved LDPC Codes for MLC Flash Memory Kathryn Haymaker and Christine A. ...
doi:10.1109/jsac.2014.140507
fatcat:jw2pydohnvhljasmzwa52kq2ii
A Low-Cost Improved Method of Raw Bit Error Rate Estimation for NAND Flash Memory of High Storage Density
2020
Electronics
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Cells wear fast in NAND flash memory of high storage density (HSD), so it is very necessary to have a long-term frequent in-time monitoring on its raw bit error rate (RBER) changes through a fast RBER ...
Experimental results show that when RBER is close to the upper bound of LDPC code, the reading efficiency can be increased by 35.8% compared to the case of no rate penalty. ...
Among types of LDPC codes, quasi-cyclic LDPC (QC-LDPC) code [32] is a structured LDPC code recommended because it satisfies the row/column constraint to make sure no loop iteration in decoding which ...
doi:10.3390/electronics9111900
fatcat:tn4h44x62rfqvbvp3aijx66cii
Data storage time sensitive ECC schemes for MLC NAND Flash memories
2013
2013 IEEE International Conference on Acoustics, Speech and Signal Processing
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In both cases, we first apply Gray coding and 2-bit interleaving. ...
For instance, for a 2KB MLC Flash used in long storage time applications, the proposed ECC scheme has 50% lower energy and 60% lower decoding latency compared to the BCH scheme. ...
Since the error correction capability of Hamming code [5] is not sufficient for increased error rate in NAND Flash memories, especially for MLC NAND Flash in scaled technology nodes, BCH code based ECC ...
doi:10.1109/icassp.2013.6638108
dblp:conf/icassp/YangMKC13
fatcat:hp33blqmtbbgpidbaasvstopga
Error Correction Codes and Signal Processing in Flash Memory
[chapter]
2011
Flash Memories
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NAND flash memory structure NAND flash memory cells are organized in an array->block->page hierarchy, as illustrated in Fig. 1 ., where one NAND flash memory array is partitioned into many blocks, and ...
each www.intechopen.com Flash Memories ...
Modern NAND flash memories use either even/odd bit-line structure, or all-bit-line structure. ...
doi:10.5772/19083
fatcat:sndd6bcb25ghtby7nnh4dsevz4
Guest Editorial Communication Methodologies for the Next-Generation Storage Systems
2014
IEEE Journal on Selected Areas in Communications
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Solid state drives (NAND flash based and DRAM based) are rapidly gaining importance due to their energy efficiency at high access speeds. ...
Such non-volatile memories (NVMs) have already found use in consumer electronics and in enterprise storage, but still lag hard disk drives in terms of the cost. ...
The paper "Structured Bit-Interleaved LDPC Codes for MLC Flash," by K. Haymaker and C. A. ...
doi:10.1109/jsac.2014.140501
fatcat:rghjd3xwibcpjakdzcn7pc2gt4
Error Control Coding for Flash Memory
[chapter]
2011
Flash Memories
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Nonbinary LDPC code for flash memory The following evaluates the decoded BER of the nonbinary LDPC codes for a channel model of 8-level cell flash memory (Maeda & Kaneko, 2009) , where the threshold voltages ...
for Flash Memory www.intechopen.com
Flash Memories www.intechopen.com Error Control Coding for Flash Memory
Will-be-set-by-IN-TECH ...
Error Control Coding for Flash Memory, Flash Memories, Prof. ...
doi:10.5772/18803
fatcat:brzewvo73bbu5jafivbsrjazga
Optimal Detector for Multilevel NAND Flash Memory Channels with Intercell Interference
2014
IEEE Journal on Selected Areas in Communications
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In this paper we derive the optimal detector for multilevel cell (MLC) flash memory channels with intercell interference (ICI). ...
Index Terms-Fast Fourier transform (FFT), intercell interference (ICI), maximum a posteriori (MAP) detector, multilevel cell (MLC), NAND flash memory. ...
MLC NAND FLASH BASICS
A. Structure A NAND flash memory consists of lots of cells. ...
doi:10.1109/jsac.2014.140503
fatcat:lgysmyb7urhpzahtrbzrihvbyq
Error Characterization, Mitigation, and Recovery in Flash Memory Based Solid-State Drives
[article]
2017
arXiv
pre-print
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., MLC, TLC) cell data coding. ...
We provide rigorous experimental data from state-of-the-art MLC and TLC NAND flash devices on various types of flash memory errors, to motivate the need for such techniques. ...
They would also like to thank their collaborator Seagate for their continued dedicated support. ...
arXiv:1706.08642v3
fatcat:ozzc62npvzewhgkb54ebvnh5ta
A NEW APPROACH FOR ERROR CORRECTION DECODING BASED ON THE BP ALGORITHM IN LTE AND WIMAX SYSTEMS
2018
International Journal of Computing Communications and Networking
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parity check (LDPC), tail-biting Convolutional, and turbo codes as the forward error correcting codes (FEC) scheme for data and overhead channels. ...
Therefore, many efficient algorithms have been proposed for decoding these codes. ...
Hamming ECC is commonly used to correct NAND flash memory errors. This provides single-bit error correction and 2bit error detection. ...
doi:10.30534/ijccn/2018/25722018
fatcat:5kfljg5ptzgldaohfvu6yuppsu
Protograph-based Bit-Interleaved Coded Modulation: A Promising Bandwidth-Efficient Design Paradigm
[article]
2021
arXiv
pre-print
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As an established bandwidth-efficient coded modulation technique, bit-interleaved coded modulation (BICM) can achieve very desirable error performance with relatively low implementation complexity for ...
FEC solution for BICM systems, and found widespread applications such as deep-space communication, satellite communication, wireless communication, optical communication, and flash-memory-based data storage ...
[57] Constructed a family of RC-PLDPC codes and a novel bit-mapping scheme for MLC BICM-NI flash-memory systems. Fang et al. ...
arXiv:2112.08557v1
fatcat:szkgba5muvedvbtbrcnfndcrom
Errors in Flash-Memory-Based Solid-State Drives: Analysis, Mitigation, and Recovery
[article]
2018
arXiv
pre-print
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., MLC, TLC) cell data coding. ...
We provide rigorous experimental data from state-of-the-art MLC and TLC NAND flash devices on various types of flash memory errors, to motivate the need for such techniques. ...
ACKNOWLEDGMENTS The authors would like to thank Rino Micheloni for his helpful feedback on earlier drafts of the paper. They would also like to thank Seagate for their continued dedicated support. ...
arXiv:1711.11427v2
fatcat:rvnbeg4eevfa7lczf2h2ificxi
NAND Flash Memory Organization and Operations
2015
Journal of Information Technology & Software Engineering
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Acknowledgement This research has been supported by the European ARTEMIS Industry Association by the project 7H12002 "Interactive Power Devices for Efficiency in Automotive with Increased Reliability and ...
Table 1 : 1 The major differences between NAND and NOR flash memory.
Table 2 : 2 Error correction for MLC flash and for SLC flash. ...
In convolutional codes the information bits are spread along the sequence [32] Hamming codes, Bose-Chaudur-Hocquenghem (BCH) codes [33] , Reed-Solomon (RS) codes, and Low-density parity check (LDPC) ...
doi:10.4172/2165-7866.1000139
fatcat:qfkfwr3rzvhmpm43qswf2illu4
Read-and-Run Constrained Coding for Modern Flash Devices
[article]
2021
arXiv
pre-print
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One of the most important innovations in that regard is enabling the storage of more than one bit per cell in the Flash device, i.e., having more than two charge levels per cell. ...
Our coding schemes work for any number of levels per cell, offer systematic encoding and decoding, and are capacity-approaching. ...
An idea that allows page separation for MLC Flash was introduced in [15] . ...
arXiv:2111.07415v1
fatcat:5odfjkzh2rfwdc634itzcwwjna
Product Code Schemes for Error Correction in MLC NAND Flash Memories
2012
IEEE Transactions on Very Large Scale Integration (vlsi) Systems
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Error control coding (ECC) is essential for correcting soft errors in Flash memories. In this paper we propose use of product code based schemes to support higher error correction capability. ...
While these schemes have slightly larger latency and require additional parity bit storage, they provide an easy mechanism to increase the lifetime of the Flash memory devices. ...
In [18] , 8-bit even-parity code in both dimensions with bit interleaving has been used for SRAM caches of size 256 256 bits. ...
doi:10.1109/tvlsi.2011.2174389
fatcat:yxyvfe667zgdriz7nemnrlpjga
Architectural Techniques for Improving NAND Flash Memory Reliability
[article]
2018
arXiv
pre-print
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Raw bit errors are common in NAND flash memory and will increase in the future. These errors reduce flash reliability and limit the lifetime of a flash memory device. ...
and write-cold data. (2) We propose a new framework that learns an online flash channel model for each chip and enables four new flash controller algorithms to improve flash reliability by up to 69.9% ...
Soft Information Estimation for LDPC Codes To tolerate flash errors more efficiently, today's flash controllers use LDPC codes to detect and correct multiple raw bit errors in the data read from the flash ...
arXiv:1808.04016v1
fatcat:fotned4yajc2xmaoezwjdrgypu
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