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Flash memory devices with metal floating gate/metal nanocrystals as the charge storage layer: A status review

Renu Rajput, Rakesh Vaid
2020 Facta universitatis - series Electronics and Energetics  
Due to its high operation speed, excellent scalability and higher reliability it has been shown as a promising candidate for future non-volatile memory applications.  ...  This review paper focuses on the recent efforts and research activities related to the fabrication and characterization of non-volatile memory device with metal floating gate/metal nanocrystals as the  ...  Rakesh Vaid for supervising the project. Both the authors read and approved the final manuscript.  ... 
doi:10.2298/fuee2002155r fatcat:kveg7bgsozgelkxrz5rp5cnn2a

Experimental Study on Silicon Nanocrystals Rich Lanthanum Fluoride Films for Future Electronic Devices

Md. Ferdous Rahman, Sheikh Rashel Al Ahmed, Golam Saklayen, Abu Bakar Md. Ismail
2016 Rajshahi University Journal of Science and Engineering  
Application of this material has been tested for low-voltage operating<br />non-volatile memory (NVM) and Schottky junction solar cells.  ...  Feasibility for the future electronic devices a thorough investigation on Silicon<br />nanocrystals (Si-NCs) rich Lanthanum Fluoride (LaF3) film fabricated using a novel onestep<br />chemical method has  ...  We acknowledge the help of Atomic Energy Centre, Dhaka for the SEM characterization.  ... 
doi:10.3329/rujse.v44i0.30388 fatcat:dn3hjwoi4nartmrrcocthbmvxm

Recent progress in gold nanoparticle-based non-volatile memory devices

Jang-Sik Lee
2010 Gold Bulletin  
Various synthesis methods have been applied to fabricate gold nanoparticle-based nonvolatile memory devices and recent progress indicates that gold is a very promising material for non-volatile memory  ...  Among the many kinds of nanoparticles, gold nanoparticles are some of the most widely used materials for charge trapping elements in non-volatile memory devices because they are chemically stable, easily  ...  Ryu et al. reported on the use of double-stacked metal nanocrystal layers for non-volatile memory applications [59] .  ... 
doi:10.1007/bf03214986 fatcat:nenlilvk3vacfnqu73tci54ur4

Organic nano-floating-gate transistor memory with metal nanoparticles

Luu Van Tho, Kang-Jun Baeg, Yong-Young Noh
2016 Nano Convergence  
Organic non-volatile memory is advanced topics for various soft electronics applications as lightweight, low-cost, flexible, and printable solid-state data storage media.  ...  Different types of nano-floating-gates and their various synthesis methods have been developed and applied to fabricate nanoparticle-based non-volatile memory devices.  ...  The retention time is another important parameter for non-volatile memory.  ... 
doi:10.1186/s40580-016-0069-7 pmid:28191420 pmcid:PMC5271145 fatcat:k63y3cv77jea3njk54da4n2ggm

SONOS memories with embedded silicon nanocrystals in nitride

Mei-Chun Liu, Tsung-Yu Chiang, Po-Yi Kuo, Ming-Hong Chou, Yi-Hong Wu, Hsin-Chiang You, Ching-Hwa Cheng, Sheng-Hsien Liu, Wen-Luh Yang, Tan-Fu Lei, Tien-Sheng Chao
2008 Semiconductor Science and Technology  
We have successfully demonstrated SONOS memories with embedded Si-NCs in silicon nitride.  ...  This new structure exhibits excellent characteristics in terms of larger memory windows and longer retention time compared to control devices.  ...  (Some figures in this article are in colour only in the electronic version) Silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memories have been proposed to overcome the oxide thickness limit of  ... 
doi:10.1088/0268-1242/23/7/075033 fatcat:bay3rcdhundc3nrwcfrmyf6cwy

Welcome and Opening Remarks

William D. Rhine, Lars Bode
2018 Breastfeeding Medicine  
node (CMOS5) 0.56[mu]m[superscript 2] SRAM cell design for very low operation voltage A 0.18[mu]m logic-based MRAM technology for high performance nonvolatile memory applications Fabrication of HfSiON  ...  /HfO[subscript 2] with poly-Si/HfO[subscript 2] gate stacks using scaled chemical oxide interfaces Novel plasma enhanced atomic layer deposition technology for high-k capacitor with EOT of 8A on conventional  ...  3] gate stack an innovative solution to low-power CMOS Highly manufacturable SONOS non-volatile memory for the embedded SoC solutionTheoretical and experimental investigation of Si nanocrystal memory  ... 
doi:10.1089/bfm.2018.29069.wdr pmid:29624418 fatcat:vw44nj7nwfex7nkdssnc55xk2a

Small Molecular Organic Nonvolatile Memory Cells Fabricated with in Situ O2Plasma Oxidation

Sung-Ho Seo, Woo-Sik Nam, Jea-Gun Park
2008 JSTS Journal of Semiconductor Technology and Science  
Our memory cells sandwich an upper α-NPD layer, Al nanocrystals surrounded by Al 2 O 3 , and a bottom α-NPD layer between top and bottom electrodes.  ...  They also demonstrated symmetrical current versus voltage characteristics and a reversible erase and program process, indicating potential for terabit-level nonvolatile memory.  ...  ACKNOWLEDGMENTS This project was supported by "The National Research Program for 0.1-Terabit Non-volatile Memory Development" sponsored by the Korean Ministry of Commerce, Industry and Energy.  ... 
doi:10.5573/jsts.2008.8.1.040 fatcat:36scg2czfbdktfwarhpyus2v34

Developments in nanocrystal memory

Ting-Chang Chang, Fu-Yen Jian, Shih-Cheng Chen, Yu-Ting Tsai
2011 Materials Today  
Discrete nanocrystal memory was first proposed by IBM in 1995, and by the early 2000s researchers were already considering it to be a promising candidate for the solution of the scaling probl em 3 (Fig  ...  nanocrystal memory.  ...  Silicon nanocrystal memory was first introduced as a replacement for the conventional floating gate in the non-volatile memory (NVM) structure by Tiwari et al. in the early 1990s 35 .  ... 
doi:10.1016/s1369-7021(11)70302-9 fatcat:k2p7wb66nvbabkjbledjgsa6fm

Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles [chapter]

Asal Kiazadeh, Paulo R. Rocha, Qian Chen, Henrique L. Gomes
2011 IFIP Advances in Information and Communication Technology  
It is demonstrated that planar structures based on silver nanoparticles hosted in a polymer matrix show reliable and reproducible switching properties attractive for nonvolatile memory applications.  ...  For instance, the absence of mechanical parts, lighter weight and lower power dissipation makes flash non-volatile memory ideal for these applications.  ...  Introduction Non-volatile memories (NVMs) have become a major technology in the storing of digital information.  ... 
doi:10.1007/978-3-642-19170-1_65 fatcat:shckx7ut5jbjvhv6ywory2ps2m

TCAD Modeling and Data of NOR Nanocrystal Memories

S. Jacob, L. Perniola, P. Scheiblin, B. de Salvo, G. Lecarval, E. Jalaguier, G. Festes, R. Coppard, F. Boulanger, S. Deleonibus
2006 2006 7th Annual Non-Volatile Memory Technology Symposium  
Among the possible solutions to push further the scaling limits of standard technologies, Si nanocrystal (Si-NC) memories are one of the most promising.  ...  Comparison between a 3D "random-distributed" NC memory cell and a 2D "ordered" NC memory cell A three-dimensional structure, where the embedded nanocrystals are randomly distributed (both along the device  ... 
doi:10.1109/nvmt.2006.378871 fatcat:zt2gqn62lnd5ziskbzt6d4d6eu

NANOPARTICLE BASED CHARGE TRAPPING MEMORY DEVICE APPLYING MOS TECHNOLOGY: A COGNITIVE APPROACH USING POLYVINYL ALCOHOL CAPPED ZINC OXIDE NANOCRYSTAL

Alok Ranjan .
2013 International Journal of Research in Engineering and Technology  
The basic structure of the memory cell is analogous to the charge trapping MOS transistor except the charge trapping layer being replaced by discrete nano particles.  ...  Design of a low cost nano particle based 'Charge trapping memory' device will be described which is expected to have superior characteristics than the conventional ones.  ...  Ramachandran, Director, National Institute of Technology Nagaland for his all encouragement and support during the overall completion of the project.  ... 
doi:10.15623/ijret.2013.0201008 fatcat:5wx6r4q7zvhz5dojqw6sdb4vvu

Structural Characterization of Layers for Advanced Non-volatile Memories [chapter]

K. Giannakopoulos, J. Giannopoulos, P. Bousoulas, E. Verrelli, D. Tsoukalas
2015 Springer Proceedings in Physics  
Non-volatile memory cells are the devices with the most aggressive scaling on the market. For this reason the accurate characterization of their layer stacks is of great importance.  ...  We present a review of our recent work on a large variety of such stacks, for charge-trap and resistive memories, which have been characterized structurally with Transmission Electron Microscopy and Conducting  ...  Whatever the approach for creating non-volatile memories, structural characterization is a critical part of the research effort that is required for their development.  ... 
doi:10.1007/978-3-319-16919-4_2 fatcat:kbtq2te5ibdudg4u36xuyzb6lu

Hybrid phthalocyanine/lead sulphide nanocomposite for bistable memory switches

Zahra Khozaee, Lydia Sosa-Vargas, Andrew N Cammidge, Michael J Cook, Asim K Ray
2015 Materials Research Express  
A simple, one-step method is employed to produce, at room temperature, a single layer of an organic-inorganic nanocomposite containing non-aggregated lead sulphide (PbS) quantum dots (QDs) embedded in  ...  The on-off ratio of the nanocomposite device is at least three orders of magnitude higher than that for 6PcH2 organic films, while both devices operate at a very low bias voltage of 0.5V.  ...  Gillin of Queen Mary, University of London, for fruitful discussions and input. References  ... 
doi:10.1088/2053-1591/2/9/096305 fatcat:5o7ilgivgre5dbocofg6oio7yq

Ge nanocrystals in alumina matrix: A structural study

R J Kashtiban, S R C Pinto, U Bangert, A G Rolo, A Chahboun, M J M Gomes, A J Harvey
2010 Journal of Physics, Conference Series  
Germanium (Ge) nanocrystals (NCs) embedded in alumina thin films were produced by deposition on silicon (111) substrates using radio-frequency (RF) magnetron sputtering.  ...  The average size of NCs in the sample with larger NCs was estimated to be 7.2, 30.0 and 7.6 nm, and 5.0, 7.0 and 4.8 nm for the sample with smaller NCs, according to Xray diffraction (XRD), Raman and high  ...  Si and Ge-NCs embedded in a SiO 2 matrix have attracted great attention because of their potential applications in high performance non-volatile memory devices and light emitting diodes [1] [2] [3] [4  ... 
doi:10.1088/1742-6596/209/1/012060 fatcat:vwbjuca62fh2zfjozyuejpoqku

Isolated nanographene crystals for nano-floating gate in charge trapping memory

Rong Yang, Chenxin Zhu, Jianling Meng, Zongliang Huo, Meng Cheng, Donghua Liu, Wei Yang, Dongxia Shi, Ming Liu, Guangyu Zhang
2013 Scientific Reports  
Here we proposed a novel non-volatile charge trapping memory utilizing isolate and uniformly distributed nanographene crystals as nano-floating gate with controllable capacity and excellent uniformity.  ...  Driven by this demand, considerable works have focused on searching candidate materials and structures as the storage mediums in memory devices, e.g. semiconductor/metal nanocrystals and high-k dielectric  ...  Thus, the nanographene crystals are promising for nanoscale integrated high-performance and low-cost non-volatile charge trapping memory applications.  ... 
doi:10.1038/srep02126 pmid:23820388 pmcid:PMC3699807 fatcat:py3yratbefg4dnqmc7t2ih3524
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