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Reliability issues of flash memory cells

S. Aritome, R. Shirota, G. Hemink, T. Endoh, F. Masuoka
1993 Proceedings of the IEEE  
~ SEIICHI ARITOME, RIICHIRO SHIROTA, GERTJAN HEMINK, TETSUO ENDOH, AND FUJI0 MASUOKA Invited Paper The reliability issues of Flash electrically erasable programmable read-only memory (Flash EEPROM) are  ...  The reduction of the memory cell size and improvement in the reliability have been realized by several breakthroughs in the device technology; in particular, the reliability of the ETOX and NAND structure  ...  CONCLUSIONS Reliability issues of Flash EEPROM's are reviewed. The reliability of both the sourcexrase type (ETOX) Flash memory and the NAND structure EEPROM have been discussed.  ... 
doi:10.1109/5.220908 fatcat:dsiyzf4kibbrzft4kzh4sbyxpy

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

Alessandro Spinelli, Christian Compagnoni, Andrea Lacaita
2017 Computers  
We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field.  ...  A thorough understanding of the complex phenomena involved in the operation and reliability of NAND cells remains vital for the development of future technology nodes.  ...  Conflicts of Interest: The authors declare no conflict of interest.  ... 
doi:10.3390/computers6020016 fatcat:63wprqy37jftxpavgau7pbtpra

High-Density Solid-State Memory Devices and Technologies

Christian Monzio Compagnoni, Riichiro Shirota
2022 Electronics  
The relevance of solid-state memories in the world of electronics is on the constant rise [...]  ...  The second review paper in the Special Issue is by Watanabe and Lin [2] and presents an overview of the reliability issues arising from traps in the dielectric layers of solidstate memory cells.  ...  The fourth review paper in the Special Issue is by Chiu and Shirota [4] and summarizes a method to investigate the endurance of NAND Flash memories starting from cell transconductance.  ... 
doi:10.3390/electronics11040538 fatcat:ss4s23zvrbczdgpmvaiptgoizy

Technical Solutions to Mitigate Reliability Challenges due to Technology Scaling of Charge Storage NVM

Meng Chuan Lee, Hin Yong Wong
2013 Journal of Nanomaterials  
Therefore, further technology scaling has to be supplemented with novel approaches in order to surmount these reliability issues to achieve desired reliability performance.  ...  Charge storage nonvolatile memory (NVM) is one of the main driving forces in the evolution of IT handheld devices.  ...  Furthermore, technological scaling of physical dimension for memory cell alone will not be able to completely overcome these reliability issues.  ... 
doi:10.1155/2013/195325 fatcat:gugpqm2znbcz5dyxbg27s2ghfm

The RowHammer Problem and Other Issues We May Face as Memory Becomes Denser [article]

Onur Mutlu
2017 arXiv   pre-print
We also discuss what other vulnerabilities may be lurking in DRAM and other types of memories, e.g., NAND flash memory or Phase Change Memory, that can potentially threaten the foundations of secure systems  ...  It is caused by a hardware failure mechanism called DRAM disturbance errors, which is a manifestation of circuit-level cell-to-cell interference in a scaled memory technology.  ...  Other Vulnerabilities in NAND Flash Memory We believe other sources of error (e.g., cell-to-cell interference) and cell-to-cell variation in flash memory can also lead various vulnerabilities.  ... 
arXiv:1703.00626v1 fatcat:jsvwx37hrzbepcqynw6hhcgzra

Executing real-time programs on negative-AND flash memory considering read disturb errors

Victoria Shangina, Kyoung-Soo We, Chang-Gun Lee
2017 2017 3rd IEEE International Conference on Computer and Communications (ICCC)  
More specifically, this research suggests a technique that will allow overcoming reliability issue of the embedded system that uses NAND flash memory for program execution.  ...  Along with undeniable advantages that usage of NAND flash can give, there are still unsolved issues concerning reliability.  ...  Reliability issues of the NAND flash memory There are various NAND Flash reliability issues.  ... 
doi:10.1109/compcomm.2017.8323005 fatcat:r3yldczzhzdkdcvhyuinq6awme

The Behavior Analysis of Flash-Memory Storage Systems

Po-Chun Huang, Yuan-Hao Chang, Tei-Wei Kuo, Jen-Wei Hsieh, Miller Lin
2008 2008 11th IEEE International Symposium on Object and Component-Oriented Real-Time Distributed Computing (ISORC)  
The behaviors of flash memory are also analyzed in terms of performance and reliability issues. 11th IEEE Symposium on Object Oriented Real-Time Distributed Computing (ISORC) 978-0-7695-3132-8/08 $25.00  ...  Performance and reliability are two major design concerns of flash-memory storage systems, especially for low-cost products.  ...  As the capacity of flash memory and the number of bits in each flash cell increase, how to retain the system performance and reliability has become a very challenging issue.  ... 
doi:10.1109/isorc.2008.33 dblp:conf/isorc/HuangCKHL08 fatcat:wcsv23hwcfgf3lbboasvznausi

EDACs and test integration strategies for NAND flash memories

Stefano Di Carlo, Michele Fabiano, Roberto Piazza, Paolo Prinetto
2010 2010 East-West Design & Test Symposium (EWDTS)  
Error Detection And Correction (EDAC) techniques are needed to improve dependability of flash-memory devices.  ...  Abstract-Mission-critical applications usually presents several critical issues: the required level of dependability of the whole mission always implies to address different and contrasting dimensions  ...  FLASH MEMORY RELIABILITY ISSUES Flash memories present several reliability issues especially because of their way of functioning [12] .  ... 
doi:10.1109/ewdts.2010.5742060 dblp:conf/ewdts/CarloFPP10a fatcat:hxuohiglovakfelfddmjcuusqy

Reliability of graphene as charge storage layer in floating gate flash memory

M. Hilman Ahmad, N Ezaila Alias, Afiq Hamzah, Zaharah Johari, M. S. Z. Abidin, Norlina Paraman, M. L. Peng Tan, Razali Ismail
2019 Indonesian Journal of Electrical Engineering and Informatics (IJEEI)  
The data retention for the n-channel flash memory cell is retained by 75% (from 15.4V to 11.6V) whereas for the p-channel flash memory cell is retained by 80% (from 15.6V to 12.5V) after 10 years of extrapolation  ...  with -1/1V gate stress which shows that p-channel flash memory cell demonstrates better data retention compared to n-channel flash memory cell.  ...  To corroborate with this issue with thin poly-Si FG, a thin metal layer is used as a FG in flash memory cell is capable of extinguishing the ballistic current in flash memory cells.  ... 
doi:10.52549/ijeei.v7i2.1170 fatcat:ssbkimzyd5d2toxrer65m3lnnm

Introduction to Advanced Semiconductor Memories [chapter]

2009 Advanced Semiconductor Memories  
The major issues concerning yield and reliability of flash memories are flash overerase, program/read disturbs, program/read endurance, flash data retention failures, and flash hot carrier reliability  ...  Chapter 5 in the present book reviews the major reliability and yield issues for flash memories.  ... 
doi:10.1109/9780470544136.ch1 fatcat:5agoaobfx5aqfmmsnmsj4a4mwy

Highly Reliable B4-Flash Technology for High Density Embedded NVM Application

N. Ajika, S. Shukuri, S. Shimizu, T. Ogura, M. Mihara, K. Kobayashi, M. Nakashima
2011 2011 3rd IEEE International Memory Workshop (IMW)  
Superiority of B4-Flash reliability to conventional NOR, which has been pointed out in the previous paper [4] has been confirmed, accordingly.  ...  B4-Flash superiority of high speed program and erase, high reliability has been confirmed by evaluating the 16Mbit test array chip and single bit test vehicle.  ...  Embedded B4-Flash memory cell physical structure is quite the same as conventional embedded NOR, except for Pch memory cell.  ... 
doi:10.1109/imw.2011.5873185 fatcat:lzxx4yh6o5b7bciufaq73hw3ta

Configurability of performance and overheads in flash management

Tei-Wei Kuo, Jen-Wei Hsieh, Li-Pin Chang, Yuan-Hao Chang
2006 Proceedings of the 2006 conference on Asia South Pacific design automation - ASP-DAC '06  
The capacity of flash-memory storage systems increases very quickly such that memory space requirements grows quickly.  ...  The significant increment of flash-memory access numbers seriously exaggerates the Read/Program Disturb Problems!  ...  Challenging Issues -Reliability Over-Erasing Problems Fast Erasing Bits All of the cells connected to the same bit line of a depleted cell would be read as "1", regardless of their values.  ... 
doi:10.1145/1118299.1118383 fatcat:2xitu64qdveqljq6volebri7su

A Novel Program Suspend Scheme for Improving the Reliability of 3D NAND Flash Memory

Zhichao Du, Zhipeng Dong, Kaikai You, Xinlei Jia, Ye Tian, Yu Wang, Zhaochun Yang, Xiang Fu, Fei Liu, Qi Wang, Lei Jin, Zongliang Huo
2022 IEEE Journal of the Electron Devices Society  
Experimental results indicate that the conventional program suspend scheme in 3D NAND flash memory chip can generate unexpected additional read fail bits and reduce the reliability of 3D NAND flash memory  ...  Silicon experimental data show that the proposed scheme can effectively limit the read fail bit count (FBC) to a normal range, thus improving the reliability of 3D NAND flash memory significantly.  ...  the reliability of the memory.  ... 
doi:10.1109/jeds.2022.3140949 fatcat:awk2scjzjze7teicucwdtvw764

Recent Advances in DRAM and Flash Memory Architectures [article]

Onur Mutlu, Saugata Ghose, Rachata Ausavarungnirun
2018 arXiv   pre-print
DRAM and NAND flash memory, the dominant memory and storage technologies, respectively; and (2) several new mechanisms we have proposed based on our observations from these analyses, characterization,  ...  of detailed simulation and experimental characterization of real memory and storage devices.  ...  As a sampling of our 7+ years of research into NAND flash memory reliability, we feature three papers that design mechanisms to significantly mitigate reliability issues and extend the limited lifetime  ... 
arXiv:1805.09127v3 fatcat:fnutr3affreajggqo6dcwk6b24

A High Performance Co-design of 26 nm 64 Gb MLC NAND Flash Memory using the Dedicated NAND Flash Controller

Byoung-Sung You, Jin-Su Park, Sang-Don Lee, Gwang-Ho Baek, Jae-Ho Lee, Min-Su Kim, Jong-Woo Kim, Hyun Chung, Eun-Seong Jang, Tae-Yoon Kim
2011 JSTS Journal of Semiconductor Technology and Science  
Therefore, the cell size of the NAND Flash memory has been scaled down by merely 50% and has been doubling density each per year. [1] However, side effects have arisen the cell distribution and reliability  ...  Also, FLASH controller to manage shrink effect leads to speed and current issues.  ...  ACKNOWLEDGMENTS The authors would like to appreciate our NAND Flash design team, DV Team, Device Team, Product Team, and Process Team for great support and development.  ... 
doi:10.5573/jsts.2011.11.2.121 fatcat:trgtokf4lbbozpkkxjnetkrbm4
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