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Implementation of integrated real-time multi-sensors on a multi-wafer production MBE system

Guang Wang, Ge Ren, Luan Le, Henry P Lee, Paul Pinsukanjana, Jared Hubbard, Yung-Chung Kao
2001 Journal of Crystal Growth  
In this paper, we describe the implementation of a multi-sensor system consisting of both process-and wafer-stage sensors on a multi-wafer production molecular beam epitaxy (MBE) tool.  ...  In situ non-invasive process monitoring and control during semiconductor epitaxy is a potential enabling technology that can transform the existing approach to epi-wafer manufacturing.  ...  When used in combination with post-growth exsitu characterization, real-time sensors can significantly reduce the characterization time and cost of epi-wafer production.  ... 
doi:10.1016/s0022-0248(01)00690-x fatcat:6wwrydmkdbbanpzxsgxmxwrdpa

Real-time sensing and metrology for atomic layer deposition processes and manufacturing

Laurent Henn-Lecordier, Wei Lei, Mariano Anderle, Gary W. Rubloff
2007 Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena  
In situ quadrupole mass spectrometry ͑QMS͒ has been integrated to an atomic layer deposition ͑ALD͒ reactor to achieve real-time chemical diagnostic and wafer-state metrology.  ...  The by-product QMS signal was then integrated in real time over each exposure and plotted against process cycle number to directly observe ALD film growth, leading to two valuable metrologies.  ...  They also thank Mario Barozzi and Massimo Bersani in ITC-irst, Italy, for SIMS depth profile characterization and quantification.  ... 
doi:10.1116/1.2429672 fatcat:5zcch5ja4rgupem66pmcrrzoma

Diagnostics for plasma processing (etching plasmas) (invited)

Noah Hershkowitz, Robert A. Breun
1997 Review of Scientific Instruments  
The goal of control diagnostics is to make noninvasive in situ measurements of relevant processing parameters. Diagnostics used in semiconductor etching are considered.  ...  An example is given of the use of many diagnostics in characterizing SiO 2 and Si etching by fluorocarbons.  ...  Control can be run to run or real time with real time being preferable. In run to run, the condition of the finished product may be used to improve the process.  ... 
doi:10.1063/1.1147752 fatcat:orngprbwjbeejjtjoqpeedmxl4

Conference Report: International Workshop on Semiconductor Characterization: Present Status and Future Needs - Gaithersburg, MD, January 30 February 2, 1995

D.G. Seiler, T.J. Shaffner
1995 Journal of Research of the National Institute of Standards and Technology  
Their tireless efforts helped contribute both to a successful workshop and the timely publication of the proceedings.  ...  Jane Walters and Tammy Clark of the NIST Semiconductor Electronics Division staff, whose expert assistance greatly facilitated the planning and conduct of the workshop and the preparation of the proceedings  ...  For in-situ real-time control, it can improve equipment effectiveness by reducing process time, down time, and use of test wafers, while maintaining product quality.  ... 
doi:10.6028/jres.100.053 pmid:29151771 pmcid:PMC4887255 fatcat:b72yhljzmnbhhoijk7koewmavq

In situ diode laser absorption measurements of plasma species in a gaseous electronics conference reference cell reactor

Daniel B. Oh
1995 Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena  
Optical sensors as monitors of gas phase etch chemistry are attractive because they offer the potential of nonintrusive in situ measurements for use as real time inputs to process control.  ...  The diode laser sensor is used for in situ measurements of neutral CF 2 reactive intermediates and CF 2 O etch product.  ...  In the area of plasma etching and related technologies, the corrosive environment of the plasma reactors and the need for real-time response suggest the application of nonintrusive optical monitors of  ... 
doi:10.1116/1.588212 fatcat:wtrf72dfk5bobht5cmdmblpare

In Situ Monitoring of III-V Processing

F. L. Terry
1998 Materials Research Society Symposium Proceedings  
In this paper, I will discuss experiences with use of both in situ and ex situ monitors for controlling reactive ion etching (RIE) of III-V materials.  ...  The unique opportunities and problems associated with the III-V materials and required etch processes will be contrasted to implementation of advanced wafer state endpoint detection schemes in Si and flat  ...  In compound semiconductor fabrication, in situ monitors and real-time feedback control have been relatively aggressively applied to epitaxial growth control for both MBE and OMCVD reactors. 1, 2, 3, 4  ... 
doi:10.1557/proc-535-189 fatcat:6jpgiqduv5hdvjfohqbrdhdybi

Progress and perspectives in dry processes for leading-edge manufacturing of devices: toward intelligent processes and virtual product development

Taku Iwase, Yoshito Kamaji, Song Yun Kang, Kazunori Koga, Nobuyuki Kuboi, Moritaka Nakamura, Nobuyuki Negishi, Tomohiro Nozaki, Shota Nunomura, Daisuke Ogawa, Mitsuhiro Omura, Tetsuji Shimizu (+8 others)
2019 Japanese Journal of Applied Physics  
To control such processing, methods for process monitoring, equipment control, modeling and simulation, and controlling plasma-induced damage, are required.  ...  Here, we conduct a systematic review of the literature over the last 40 years to evaluate the history and progress of dry processes in regard to intelligent process-control.  ...  fabrication process in situ in real time.  ... 
doi:10.7567/1347-4065/ab163b fatcat:ug7te4csnrdtjcqjekmmbjyi64


Irving P. Herman
2003 Annual review of physical chemistry (Print)  
The development and application of optical probes are highlighted, in particular for analyzing plasma/gas phase intermediates and products and film composition, and performing metrology, thermometry, and  ...  thin film processing.  ...  and its surface, and the substrate in situ and often in real time during the process.  ... 
doi:10.1146/annurev.physchem.54.011002.103824 pmid:12574493 fatcat:xevu5yhbcvgilotl3lcmgswotu

Real-time observation and optimization of tungsten atomic layer deposition process cycle

Wei Lei, Laurent Henn-Lecordier, Mariano Anderle, Gary W. Rubloff, Mario Barozzi, Massimo Bersani
2006 Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena  
Louis Frees and Dr. Robert Ellefson of Inficon for their technical support and helpful discussion.  ...  This work has been partially supported by the National Institute of Standards and Technology Chemical Science and Technology Laboratory ͑60NANB2D0094͒, the National Science Foundation ͑DMR0231291͒, and  ...  SENSOR APPROACHES FOR REAL-TIME ALD DIAGNOSTICS A number of in situ characterization methods have been applied to study the process chemistry and reaction mechanism in ALD process.  ... 
doi:10.1116/1.2184320 fatcat:uj7rq43k7jg3dpoae7xe67ewi4

Autonomous on-wafer sensors for process modeling, diagnosis, and control

M. Freed, M. Kruger, C.J. Spanos, K. Poolla
2001 IEEE transactions on semiconductor manufacturing  
Such a sensor-wafer would include integrated electronics, power, and communications, and would be capable of being placed into a standard production process step, or short sequence of steps.  ...  During the processing of the sensor-wafer, various process parameters would be measured and recorded.  ...  Typically, about 18% of the production capacity is wasted on process characterization [1] . An alternative to this procedure that is offered by in situ sensors is real-time control.  ... 
doi:10.1109/66.939823 fatcat:d4ifndysvjfthktt4hrtk3qdgm

Real-time optical thermometry during semiconductor processing

I.P. Herman
1995 IEEE Journal of Selected Topics in Quantum Electronics  
Most of these optical diagnostics have been implemented in research reactors to monitor wafer temperature during one or several types of thinfilm processing, such as molecular beam epitaxy, rapid thermal  ...  The optic,al techniques used to monitor the temperature of wafers during semiconductor processing are surveyed. The physical principles underlying each method are described.  ...  A critical comparison of optical probes for real-time measurements depends on many factor!  ... 
doi:10.1109/2944.488681 fatcat:di7dqnnvjjdvlc2d67yeem24q4

In-situ process control for semiconductor manufacturing

J.H. Taylor, T.K. Whidden, Zhao Xiaozhong
2002 Proceedings of the 2002 American Control Conference (IEEE Cat. No.CH37301)  
At present, the development of real-time control for reactions within production-style reactor configurations is hampered by a number of issues: The nature, concentrations and physical distributions of  ...  These parameters are virtually uncharacterized at this time, even for processes that have been in use for prolonged periods [2] .  ...  development of systems that use in situ analytical data for real-time process control.  ... 
doi:10.1109/acc.2002.1023960 fatcat:l7uktxikxfdznaamek2ecd6xly

Real-time intradermal continuous glucose monitoring using a minimally invasive microneedle-based system

Federico Ribet, Göran Stemme, Niclas Roxhed
2018 Biomedical microdevices  
Importantly, the transdermal portion of the device is 50 times smaller than that of commercial products.  ...  The proposed device can thus reduce discomfort and potentially enable less invasive real-time CGM in diabetic patients.  ...  , and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.  ... 
doi:10.1007/s10544-018-0349-6 pmid:30523421 fatcat:fps725js7fhunmfldtn6tggsly

Noncontact electrical metrology of Cu/low-k interconnect for semiconductor production wafers

Vladimir V. Talanov, André Scherz, Andrew R. Schwartz
2006 Applied Physics Letters  
The technique is based on a near-field scanned microwave probe and is noncontact, noninvasive, and requires no electrical contact to or grounding of the wafer under test.  ...  We have demonstrated a technique capable of in-line measurement of dielectric constant of low-k interconnect films on patterned wafers utilizing a test key of ~50x50 \mu m in size.  ...  Roadmap for Semiconductors (ITRS) is calling for use of the in-line and/or in-situ metrology techniques during all phases of semiconductor manufacturing -process research and development, yield ramp,  ... 
doi:10.1063/1.2216898 fatcat:xugw25cguba4dhkh5u5zqrgqay

Tracking electrochemical reactions inside organic electrodes by operando IR spectroscopy

Jan Bitenc, Alen Vizintin, Jože Grdadolnik, Robert Dominko
2019 Energy Storage Materials  
However, its application has been limited due to the difficulties related to the handling and interpretation of ex situ samples along with the lack of widely applicable in situ and operando cells.  ...  A B S T R A C T IR spectroscopy can be a non-destructive and straightforward probing tool in the battery research.  ...  Financial support from the Slovenian Research Agency (research project J2-8167, research core funding P2-0393) and Honda R&D Europe (Germany) is gratefully acknowledged and appreciated. Appendix A.  ... 
doi:10.1016/j.ensm.2019.05.038 fatcat:v24co5m3izhh5onndv6w5fqeqm
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