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Investigation on Electrical Properties of RF Sputtered Deposited BCN Thin Films

A. Prakash, G. Skaria, K. B. Sundaram
2013 ECS Transactions  
Also cross-talk is a major issue faced by semiconductor industry due to high value of k of the inter-dielectric layer (IDL) in a multilevel wiring scheme in Si ultra large scale integrated circuit (ULSI  ...  The ever increasing advancements in semiconductor technology and continuous scaling of CMOS devices mandate the need for new dielectric materials with low-k values.  ...  Different deposition techniques have been reported for depositing BCN thin films, including chemical vapor deposition (CVD), ion beam assisted deposition, cathodic arc plasma deposition, pulsed laser deposition  ... 
doi:10.1149/05329.0053ecst fatcat:vnl45hz2nzbzxlibvl5hx3phxm

Research Progress of High Dielectric Constant Zirconia-Based Materials for Gate Dielectric Application

Junan Xie, Zhennan Zhu, Hong Tao, Shangxiong Zhou, Zhihao Liang, Zhihang Li, Rihui Yao, Yiping Wang, Honglong Ning, Junbiao Peng
2020 Coatings  
The high dielectric constant ZrO2, as one of the most promising gate dielectric materials for next generation semiconductor device, is expected to be introduced as a new high k dielectric layer to replace  ...  The applications of ZrO2 and its composite thin film materials in metal oxide semiconductor field effect transistor (MOSFET) and thin film transistors (TFTs) with low power consumption and high performance  ...  Physical Vapor Deposition For physical vapor deposition (PVD), many methods have been developed to deposit thin films, which are mainly divided into two categories: vacuum evaporation coating and vacuum  ... 
doi:10.3390/coatings10070698 fatcat:qpelcsfvirarvntrugonravm4m

Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics [chapter]

Yi-Lung Cheng, Chih-Yen Lee
2018 Nanoporous Materials [Working Title]  
To provide high speed, low dynamic power dissipation, and low cross-talk noise for microelectronic circuits, low-dielectric-constant (low-k) materials are required as the inter-and intra-level dielectric  ...  Porous low-k materials have low-polarizability chemical compositions and the introducing porosity in the film.  ...  Plasma enhanced chemical vapor deposited SiCOH dielectrics: From low-k to extreme low-k interconnect materials.  ... 
doi:10.5772/intechopen.81577 fatcat:nvzpvg5msrfbbcik4o4rvmuy5i

Progress and perspectives in dry processes for emerging multidisciplinary applications: how can we improve our use of dry processes?

Taku Iwase, Yoshito Kamaji, Song Yun Kang, Kazunori Koga, Nobuyuki Kuboi, Moritaka Nakamura, Nobuyuki Negishi, Tomohiro Nozaki, Shota Nunomura, Daisuke Ogawa, Mitsuhiro Omura, Tetsuji Shimizu (+8 others)
2019 Japanese Journal of Applied Physics  
synthesis and thin-film deposition.  ...  The non-thermal nature of chemical reactions in plasma chemistry is considered to be suitable for next-generation energy production from plasmamaterial syntheses and renewable sources.  ...  Hisao Nagai and Masahiro Yamamoto for assistance in preparing the material and Drs.  ... 
doi:10.7567/1347-4065/ab163a fatcat:bd2z4taq4nf4fhjqazl54qerum

Studies on Electrical Properties of RF Sputtered Deposited Boron Carbon Nitride Thin Films

Adithya Prakash, Kalpathy B. Sundaram
2015 ECS Journal of Solid State Science and Technology  
BCN films having dielectric constant as low as 2.13 with high dielectric breakdown strength of 3.4 MV/cm and resistivity of 3 × 10 12 .cm were achieved.  ...  By varying the nitrogen concentration in the deposited films and substrate deposition temperatures, the electrical properties of BCN can be tuned accordingly.  ...  It has been reported that dielectric constant of B 4 C is around 4.8 to 8. 27 The lowest value of dielectric constant of BN was found to be 2.2 by Plasma Assisted Chemical vapor deposition (PACVD).  ... 
doi:10.1149/2.0071505jss fatcat:2jj25q5qwjaxrg7olpaifyrlsq

Oxynitride films formed by low energy NO+ implantation into silicon

J. A. Diniz, P. J. Tatsch, M. A. A. Pudenzi
1996 Applied Physics Letters  
A study of low temperature Pd and Ni silicides formed on dry etched silicon surfaces AIP Conf.  ...  These electrical properties indicate that the films formed have presented higher qualities than the nitride and oxynitride films obtained by plasma enhanced chemical vapor deposition. 18 In conclusion  ...  ͑MIS͒ devices and ultralarge scale integration ͑ULSI͒ circuit applications.  ... 
doi:10.1063/1.117169 fatcat:ll5e5n6dbjbjrdgaoqbrvk7qwe

Effects of NH/sub 3/-plasma nitridation on the electrical characterizations of low-k hydrogen silsesquioxane with copper interconnects

Po-Tsun Liu, Ting-Chang Chan, Ya-Liang Yang, Yi-Fang Cheng, S.M. Sze
2000 IEEE Transactions on Electron Devices  
Owing to serious diffusion of copper atoms in HSQ film, degradations of the dielectric properties are significant with the increase of thermal stress.  ...  The interaction between copper interconnects and low-hydrogen silsesquioxane (HSQ) film was investigated using a Cu/HSQ/Si metal insulation semiconductor capacitor and NH 3 plasma post-treatment.  ...  or chemical vapor deposition (CVD) [3] .  ... 
doi:10.1109/16.861584 fatcat:fwadz7ndzjcnrip4drozpy2xzu

Preview: 1989 MRS Spring Meeting

1989 MRS bulletin  
and emerging technologies.Several new topics will reflect emerging areas, including materials for optical storage of information (Symposium F), ultrathin magnetic films (Symposium G), and materials problems  ...  of infrastructure (Symposium P).  ...  The second group will include laser-assisted synthesis of powders and plasma chemical vapor deposition processing of coatings.  ... 
doi:10.1557/s0883769400063211 fatcat:bfns5goewna2tcbtsde3tbz2s4

Physical and Electrical Characteristics of Methylsilane- and Trimethylsilane-Doped Low Dielectric Constant Chemical Vapor Deposited Oxides

Zhen-Cheng Wu, Zhi-Wen Shiung, Chiu-Chih Chiang, Wei-Hao Wu, Mao-Chieh Chen, Shwang-Ming Jeng, Weng Chang, Pei-Fen Chou, Syun-Ming Jang, Chen-Hua Yu, Mong-Song Liang
2001 Journal of the Electrochemical Society  
This work investigates the physical and electrical properties of two species of inorganic C-doped low dielectric constant ͑low-k͒ chemical vapor deposited ͑CVD͒ organosilicate glasses ͑OSGs, ␣-SiCO:H͒.  ...  The Cu penetration can be mitigated by a thin nitride dielectric barrier.  ...  Ming-Shih Tsai of NDL and Dr. Bing-Yue Tsui of NCTU for their valuable discussion and suggestions, and Chih-Jian Chen, Tien-I Bao, and Ai-Juan Chen of TSMC for their technical assistance.  ... 
doi:10.1149/1.1369373 fatcat:fbnyg4ojkvarplzl6in7jmths4

Modification of Ta/Polymeric Low-k Interface by Electron-Beam Treatment

Zhenghao Gan, S. G. Mhaisalkar, Zhong Chen, Zhe Chen, K. Prasad, Sam Zhang, M. Damayanti, N. Jiang
2006 Journal of the Electrochemical Society  
According to the International Technology Roadmap for Semiconductors ͑ITRS͒ 2003, 1 as feature sizes in integrated circuits approach 0.1 m, it is necessary to reduce the dielectric constant of the dielectrics  ...  After that, a 25-nm-thick Ta layer was deposited immediately by an Applied Materials high-density plasma physical vapor deposition ͑HD-PVD͒ system with self-ionized plasma ͑SIP͒ technology.  ... 
doi:10.1149/1.2129493 fatcat:c7pqkn2trrezvlrgkf6wkmquqm

Improvement on Intrinsic Electrical Properties of Low-k Hydrogen Silsesquioxane/Copper Interconnects Employing Deuterium Plasma Treatment

Po-Tsun Liu, Ting-Chang Chang, Ya-Liang Yang, Yi-Fang Cheng, Jae-Kyun Lee, Fu-Yung Shih, Eric Tsai, Grace Chen, Simon M. Sze
2000 Journal of the Electrochemical Society  
Owing to serious diffusion of copper atoms in HSQ film, the degradations of dielectric properties are significant with the increase of thermal stress.  ...  The interaction between copper interconnects and low-k hydrogen silsesquioxane (HSQ) film was investigated using a Cu/HSQ/Si metal insulation semiconductor capacitor and deuterium plasma post-treatment  ...  The National Nano Device Laboratory, Taiwan, assisted in meeting the publication costs of this article.  ... 
doi:10.1149/1.1393334 fatcat:7gigkrdvmvaupdpkhoitmzqnra

A brief overview of RF sputtering deposition of boron carbon nitride (BCN) thin films

Moustafa M. Zagho, Hana D. Dawoud, Nasr Bensalah, T. M. Altahtamouni
2018 Emergent Materials  
Boron carbon nitride (BCN) ternary system was applied for variable bandgap semiconductors and systems with extreme hardness.  ...  We further mentioned the application of BCN thin films to enhance the electrical properties of metal-insulator-metal (MIM) devices according to a previous report of Prakash et al. (Opt.  ...  Furthermore, thin film technology was used to prepare metastable phases at low temperature especially with applying plasma techniques such as sputter deposition and plasma assisted chemical vapor deposition  ... 
doi:10.1007/s42247-018-0018-9 fatcat:knqnyperjbawlir3zy6auy2b5i

Investigation into the Structural and Electrical Properties of a-SiCO:H as a Diffusion Barrier to Copper

Jaeyeong Heo, Hyeong Joon Kim
2006 Journal of the Electrochemical Society  
In this study, we attempted to deposit low dielectric constant a-SiCO:H as a copper diffusion barrier by the plasma-enhanced chemical vapor deposition method using an organosilicon precursor, bis͑trimethylsilylmethane͒  ...  The dielectric constant of the a-SiCO:H films increased from 2.54 to 3.25 as the deposition temperature was increased from room temperature to 280°C.  ...  Acknowledgment The authors thank the Jusung Engineering Company for their financial support. Seoul National University assisted in meeting the publication costs of this article.  ... 
doi:10.1149/1.2257872 fatcat:y6s4mrimmbdabfrlejbx7dnqla

Filament-activated chemical vapour deposition of nitride thin films

Sadanand V. Deshpande, Jeffrey L. Dupuie, Erdogan Gulari
1996 Advanced Materials for Optics and Electronics  
We have applied the novel method of hot filament-activated chemical vapour deposition (HFCVD) for low-temperature deposition of a variety of nitride thin films.  ...  The film properties were characterised by a number of analytical and optical methods. The effect of various deposition conditions on film properties was studied.  ...  ACKNOWLEDGEMENTS This work was supported by grants from the National Science Foundation (CTS-930 1386) and Center for Display Technology and h4anufacturing at the University of Michigan.  ... 
doi:10.1002/(sici)1099-0712(199605)6:3<135::aid-amo221>3.0.co;2-4 fatcat:kq73uapsinbflnl3a5ylhhoqda

Low-k Materials: Recent Advances [chapter]

Geraud Dubois, Willi Volksen
2012 Advanced Interconnects for ULSI Technology  
They can be deposited by both spin-on and chemical vapor deposition (CVD) processes.  ...  From before 1997 until now (Figure 1.1) , plasma-enhanced chemical vapor deposition (PECVD) has been the method of choice for depositing silicon dioxide (SiO 2 ), fluorine-doped oxides (F-SiO 2 ), carbon-doped  ... 
doi:10.1002/9781119963677.ch1 fatcat:udu4wgeborc2jgkhgltihjydrm
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