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State of the Art and Future Perspectives in Advanced CMOS Technology

Henry H. Radamson, Huilong Zhu, Zhenhua Wu, Xiaobin He, Hongxiao Lin, Jinbiao Liu, Jinjuan Xiang, Zhenzhen Kong, Wenjuan Xiong, Junjie Li, Hushan Cui, Jianfeng Gao (+8 others)
2020 Nanomaterials  
This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology.  ...  The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (  ...  [411] prepared NH3 gas sensors using WS2 nanosheets and improved the selectivity of interfering substances such as methanol, ethanol, and formaldehyde.  ... 
doi:10.3390/nano10081555 pmid:32784801 pmcid:PMC7466708 fatcat:yssyxekom5hslivtbxbphjg6h4

Advances in La-Based High-k Dielectrics for MOS Applications

L.N. Liu, W.M. Tang, P.T. Lai
2019 Coatings  
On the other hand, doping La into other high-k oxides can effectively passivate their oxygen vacancies and improve the threshold voltages of relevant MOS devices, thus improving the device performance.  ...  Reports show that post-deposition treatments (high temperature, laser), nitrogen incorporation and doping by other high-k material are capable of solving these problems.  ...  So, based on the advantages of La2O3 over other high-k materials and with the motivation of providing guidelines for making good use of La-based high-k materials to improve the performance of MOS devices  ... 
doi:10.3390/coatings9040217 fatcat:3lauzkv2inbarazbjdhzlvlvau

Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks

Xin Meng, Young-Chul Byun, Harrison Kim, Joy Lee, Antonio Lucero, Lanxia Cheng, Jiyoung Kim
2016 Materials  
development and widespread use of ALD SiN x thin films in both laboratory studies and industrial applications.  ...  Over the past 20 years, recognition of the remarkable features of SiN x ALD, reinforced by experimental and theoretical investigations of the underlying surface reaction mechanism, has contributed to the  ...  Conflicts of Interest: The authors declare no conflict of interest. Materials 2016, 9, 1007  ... 
doi:10.3390/ma9121007 pmid:28774125 pmcid:PMC5457024 fatcat:sbiq7mwgpvg5to2n3lhomh2bt4