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NBTI-aware statistical circuit delay assessment

Balaji Vaidyanathan, Anthony S. Oates, Yuan Xie, Yu Wang
<span title="">2009</span> <i title="IEEE"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/vht4ijbhazhhjbamnn273zfk6a" style="color: black;">2009 10th International Symposium on Quality of Electronic Design</a> </i> &nbsp;
In this paper, we explain how circuit NBTI mitigation techniques can account for this extra variability and further present the impact of statistical PMOS NBTI DClifetime variability on the product delay  ...  This work establishes an analytical model framework to account for the NBTI aging effect on statistical circuit delay distribution.  ...  in advanced technology (equation (1) ).  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/isqed.2009.4810263">doi:10.1109/isqed.2009.4810263</a> <a target="_blank" rel="external noopener" href="https://dblp.org/rec/conf/isqed/VaidyanathanOXW09.html">dblp:conf/isqed/VaidyanathanOXW09</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/lsuls3fqzzc3fneqfugblp23p4">fatcat:lsuls3fqzzc3fneqfugblp23p4</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20200709235441/http://nics.ee.tsinghua.edu.cn/people/wangyu/conference/Balaji%20Vaidyanathan_ISQED2009.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/60/63/6063a9344f89143b92b8cbc650635fc64ef4c5f9.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/isqed.2009.4810263"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> ieee.com </button> </a>

Controlling NBTI degradation during static burn-in testing

Ashutosh Chakraborty, David Z. Pan
<span title="">2011</span> <i title="IEEE"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/fkjmyf3l45eo5ovjdnpeqpdjd4" style="color: black;">16th Asia and South Pacific Design Automation Conference (ASP-DAC 2011)</a> </i> &nbsp;
Negative Bias Temperature Instability (NBTI) has emerged as the dominant PMOS device failure mechanism in the nanometer VLSI era.  ...  The delay of benchmark circuits is observed to increase by over 10% due to static burn-in testing.  ...  INTRODUCTION Negative Bias Temperature Instability (NBTI) has emerged as the primary PMOS failure mechanism since the advanced sub-65nm VLSI technology [1] .  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/aspdac.2011.5722259">doi:10.1109/aspdac.2011.5722259</a> <a target="_blank" rel="external noopener" href="https://dblp.org/rec/conf/aspdac/ChakrabortyP11.html">dblp:conf/aspdac/ChakrabortyP11</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/vhiec2y7afa7fef64mt5r56tk4">fatcat:vhiec2y7afa7fef64mt5r56tk4</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20200709173251/https://www.cerc.utexas.edu/utda/publications/C106.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/62/c3/62c3b0f5adb321ba14d318bc3f0b9d2066cdf660.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/aspdac.2011.5722259"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> ieee.com </button> </a>

Statistical Prediction of Circuit Aging under Process Variations [chapter]

Wenping Wang, Vijay Reddy, Varsha Balakrishnan, Srikanth Krishnan, Yu Cao
<span title="2010-01-01">2010</span> <i title="InTech"> Solid State Circuits Technologies </i> &nbsp;
Statistical modeling of circuit aging NBTI is the dominant effect of circuit aging in advanced CMOS technology (Schroder & Babcock, 2003; Kimizuka et al., 1999) .  ...  Since Read SNM is determined only by the stressed PMOS side, NBTI induced SNM degradation is not cancelled out between stressed PMOS side and unstressed PMOS side.  ...  The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.5772/6875">doi:10.5772/6875</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/537z5hjmmzgkxhaomihwqvfygy">fatcat:537z5hjmmzgkxhaomihwqvfygy</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20180728174307/https://api.intechopen.com/chapter/pdf-download/6491" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/01/7a/017a16678046ce50600e2b4d0938d2dc17ad6321.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.5772/6875"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> Publisher / doi.org </button> </a>

Statistical prediction of circuit aging under process variations

Wenping Wang, Vijay Reddy, Bo Yang, Varsha Balakrishnan, Srikanth Krishnan, Yu Cao
<span title="">2008</span> <i title="IEEE"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/wogmwdlzgvgevfyxfo4g247544" style="color: black;">2008 IEEE Custom Integrated Circuits Conference</a> </i> &nbsp;
Statistical modeling of circuit aging NBTI is the dominant effect of circuit aging in advanced CMOS technology (Schroder & Babcock, 2003; Kimizuka et al., 1999) .  ...  Since Read SNM is determined only by the stressed PMOS side, NBTI induced SNM degradation is not cancelled out between stressed PMOS side and unstressed PMOS side.  ...  The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/cicc.2008.4672007">doi:10.1109/cicc.2008.4672007</a> <a target="_blank" rel="external noopener" href="https://dblp.org/rec/conf/cicc/WangRYBKC08.html">dblp:conf/cicc/WangRYBKC08</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/zds2jmdl6rfplfxzcszzeyliaa">fatcat:zds2jmdl6rfplfxzcszzeyliaa</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20190430045153/https://cdn.intechopen.com/pdfs/6491.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/fb/57/fb57680a2eb349eaf557b81184ab973d91a86e20.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/cicc.2008.4672007"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> ieee.com </button> </a>

Modeling and minimization of PMOS NBTI effect for robust nanometer design

Rakesh Vattikonda, Wenping Wang, Yu Cao
<span title="">2006</span> <i title="ACM Press"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/5vn6yyeefbbxtoo3uhwxwjwtme" style="color: black;">Proceedings of the 43rd annual conference on Design automation - DAC &#39;06</a> </i> &nbsp;
In this paper, a predictive model is developed for the degradation of NBTI in both static and dynamic operations.  ...  Negative bias temperature instability (NBTI) has become the dominant reliability concern for nanoscale PMOS transistors.  ...  While this technique is effective, it may introduce mismatching between NMOS and PMOS during regular operations. Detailed circuit analysis and optimization can be supported by the new NBTI model.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1145/1146909.1147172">doi:10.1145/1146909.1147172</a> <a target="_blank" rel="external noopener" href="https://dblp.org/rec/conf/dac/VattikondaWC06.html">dblp:conf/dac/VattikondaWC06</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/3lzx6v3zjbay3ntymvkye5hjeq">fatcat:3lzx6v3zjbay3ntymvkye5hjeq</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20060919231420/http://www.public.asu.edu/~rvattiko/dac05.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/a3/24/a324ebe0ce343b42569cb455dde8067921c37ed8.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1145/1146909.1147172"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> acm.org </button> </a>

Modeling and minimization of PMOS NBTI effect for robust nanometer design

R. Vattikonda, Wenping Wang, Yu Cao
<span title="">2006</span> <i title="IEEE"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/bonikunskbdgjicnz3tvcz7334" style="color: black;">Proceedings - Design Automation Conference</a> </i> &nbsp;
In this paper, a predictive model is developed for the degradation of NBTI in both static and dynamic operations.  ...  Negative bias temperature instability (NBTI) has become the dominant reliability concern for nanoscale PMOS transistors.  ...  While this technique is effective, it may introduce mismatching between NMOS and PMOS during regular operations. Detailed circuit analysis and optimization can be supported by the new NBTI model.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/dac.2006.229436">doi:10.1109/dac.2006.229436</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/ob7w2fq45ravtj52f6svawkgoa">fatcat:ob7w2fq45ravtj52f6svawkgoa</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20060919231420/http://www.public.asu.edu/~rvattiko/dac05.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/a3/24/a324ebe0ce343b42569cb455dde8067921c37ed8.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/dac.2006.229436"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> ieee.com </button> </a>

Characterization and estimation of circuit reliability degradation under NBTI using on-line IDDQmeasurement

Kunhyuk Kang, Keejong Kim, Ahmad E. Islam, Muhammad A. Alam, Kaushik Roy
<span title="">2007</span> <i title="ACM Press"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/bonikunskbdgjicnz3tvcz7334" style="color: black;">Proceedings - Design Automation Conference</a> </i> &nbsp;
Negative bias temperature instability (NBTI) in MOSFETs is one of the major reliability challenges in nano-scale technology.  ...  a metric to detect and characterize temporal NBTI degradation in digital circuits.  ...  In the following section, we show how our NBTI induced IDDQ model can be used to estimate reliability of circuit.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1145/1278480.1278572">doi:10.1145/1278480.1278572</a> <a target="_blank" rel="external noopener" href="https://dblp.org/rec/conf/dac/KangKIAR07.html">dblp:conf/dac/KangKIAR07</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/moan4reolzhkdphhdynmcqjco4">fatcat:moan4reolzhkdphhdynmcqjco4</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20090625195605/http://cobweb.ecn.purdue.edu/~kang18/docs/nbti_leak_dac07.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/f3/78/f3782387301330d475809c8cbad53f028b13659d.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1145/1278480.1278572"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> acm.org </button> </a>

Characterization and Estimation of Circuit Reliability Degradation under NBTI using On-Line IDDQ Measurement

Kunhyuk Kang, Keejong Kim, Ahmad E. Islam, Muhammad A. Alam, Kaushik Roy
<span title="">2007</span> <i title="IEEE"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/bonikunskbdgjicnz3tvcz7334" style="color: black;">Proceedings - Design Automation Conference</a> </i> &nbsp;
Negative bias temperature instability (NBTI) in MOSFETs is one of the major reliability challenges in nano-scale technology.  ...  a metric to detect and characterize temporal NBTI degradation in digital circuits.  ...  In the following section, we show how our NBTI induced IDDQ model can be used to estimate reliability of circuit.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/dac.2007.375187">doi:10.1109/dac.2007.375187</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/ivvkpdf47ndahmrpmbozo7p4wa">fatcat:ivvkpdf47ndahmrpmbozo7p4wa</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20090625195605/http://cobweb.ecn.purdue.edu/~kang18/docs/nbti_leak_dac07.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/f3/78/f3782387301330d475809c8cbad53f028b13659d.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/dac.2007.375187"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> ieee.com </button> </a>

Statistical reliability analysis of NBTI impact on FinFET SRAMs and mitigation technique using independent-gate devices

Yao Wang, Sorin D. Cotofana, Liang Fang
<span title="">2012</span> <i title="ACM Press"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/avjfabvtmnbw7mvjcvsje76hx4" style="color: black;">Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures - NANOARCH &#39;12</a> </i> &nbsp;
The model build upon an extension of the reaction-diffusion theory such that it can cover the natural variations encountered in nanoscale MOSFET circuits.  ...  In this paper, we propose a statistical model of Negative Bias Temperature Instability (NBTI) tailored for FinFET SRAM Arrays.  ...  are highly desirable for advanced technology nodes.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1145/2765491.2765512">doi:10.1145/2765491.2765512</a> <a target="_blank" rel="external noopener" href="https://dblp.org/rec/conf/nanoarch/0002CF12.html">dblp:conf/nanoarch/0002CF12</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/p5edthdvyvbsbng2fu7gkiyc5q">fatcat:p5edthdvyvbsbng2fu7gkiyc5q</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20121114204301/http://ce-publications.et.tudelft.nl/publications/1294_statistical_reliability_analysis_of_nbti_impact_on_finfet_s.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/9c/34/9c3420d51370e03791a824045e833d4a07f65376.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1145/2765491.2765512"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> acm.org </button> </a>

The NBTI Impact on RF Front End in Wireless Sensor Networks

Bo Zhao, Yu Wang, Huazhong Yang, Hui Wang
<span title="">2009</span> <i title="IEEE"> 2009 IEEE Circuits and Systems International Conference on Testing and Diagnosis </i> &nbsp;
Especially with the feature size declining, NBTI effect is becoming more and more serious. Previous works mainly focus on NBTI effect at device level, or NBTI effect in large-scale digital circuits.  ...  In this paper, for the WSN node, we study the NBTI impact on the frontend circuits, such as Voltage-Controlled Oscillators (VCO), Charge Pump (CP), Low Noise Amplifier (LNA), and the whole transceiver  ...  size, because the threshold voltage will be increased more by NBTI under advanced technology.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/cas-ictd.2009.4960893">doi:10.1109/cas-ictd.2009.4960893</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/hfu2ubpazfcnfjsy2szcp44z6a">fatcat:hfu2ubpazfcnfjsy2szcp44z6a</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20170706034729/http://nics.ee.tsinghua.edu.cn/people/zhaobo/ICTD2009-Bo%20Zhao.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/69/e2/69e2d7fbaa20eb01565af346269b368b19065ba1.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/cas-ictd.2009.4960893"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> ieee.com </button> </a>

Analysis and optimization of NBTI induced clock skew in gated clock trees

A. Chakraborty, G. Ganesan, A. Rajaram, D.Z. Pan
<span title="">2009</span> <i title="IEEE"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/qjrrvry5ubgdlarkymvlxuip6m" style="color: black;">2009 Design, Automation &amp; Test in Europe Conference &amp; Exhibition</a> </i> &nbsp;
Circuit design techniques are proposed to deal with NBTI induced clock skew by achieving balance in NBTI degradation of clock devices.  ...  NBTI (Negative Bias Temperature Instability) has emerged as the dominant PMOS device failure mechanism for sub-100nm VLSI designs.  ...  Acknowledgment This work is supported in part by NSF, Sun, and equipment donations from Intel.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/date.2009.5090675">doi:10.1109/date.2009.5090675</a> <a target="_blank" rel="external noopener" href="https://dblp.org/rec/conf/date/ChakrabortyGRP09.html">dblp:conf/date/ChakrabortyGRP09</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/4kdomxpwvnh3nefzogxhnyhxlm">fatcat:4kdomxpwvnh3nefzogxhnyhxlm</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20100612145053/http://www.cerc.utexas.edu/utda/publications/IP_0799.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/eb/62/eb62d3aff976987379238785399bae0aca9444e1.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/date.2009.5090675"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> ieee.com </button> </a>

Analog circuit reliability in sub-32 nanometer CMOS: Analysis and mitigation

G Gielen, E Maricau, P De Wit
<span title="">2011</span> <i title="IEEE"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/qjrrvry5ubgdlarkymvlxuip6m" style="color: black;">2011 Design, Automation &amp; Test in Europe</a> </i> &nbsp;
The paper discusses reliability threats and opportunities for analog circuit design in high-k sub-32 nanometer technologies.  ...  As a means to find more accurate, circuit-dependent reliability margins, advanced degradation effect models are reviewed and an efficient method for stochastic circuit reliability simulation is discussed  ...  In older technologies (>65nm CMOS), BTI mainly affects pMOS transistors (i.e. Negative BTI or NBTI) [21] .  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/date.2011.5763239">doi:10.1109/date.2011.5763239</a> <a target="_blank" rel="external noopener" href="https://dblp.org/rec/conf/date/GielenMW11.html">dblp:conf/date/GielenMW11</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/2hrcqg5umjcgjbvnlmbn53khrm">fatcat:2hrcqg5umjcgjbvnlmbn53khrm</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20170819043542/https://www.computer.org/csdl/proceedings/date/2011/4208/00/05763239.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/ed/fd/edfd3bf218b4e266a80733222275dfc3c9474f93.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/date.2011.5763239"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> ieee.com </button> </a>

Impact Analysis of NBTI/PBTI on SRAM VMINand Design Techniques for Improved SRAM VMIN

Tony Tae-Hyoung Kim, Zhi Hui Kong
<span title="2013-04-30">2013</span> <i title="The Institute of Electronics Engineers of Korea"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/pdhhinwb6zdunc5juvdlqkgbdq" style="color: black;">JSTS Journal of Semiconductor Technology and Science</a> </i> &nbsp;
Negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) are critical circuit reliability issues in highly scaled CMOS technologies.  ...  The proposed NBTI/PBTI-aware control of wordline pulse width and woldline voltage improves cell stability, and mitigates the V MIN degradation induced by NBTI/PBTI.  ...  OVERVIEW OF AGING MECHANISMS NBTI [11] [12] [13] [14] in PMOS transistors is recognized as the major reliability concern in advanced CMOS process technologies.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.5573/jsts.2013.13.2.87">doi:10.5573/jsts.2013.13.2.87</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/647qwddhavfflcb6jwrrtt542m">fatcat:647qwddhavfflcb6jwrrtt542m</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20170809160639/http://www.ntu.edu.sg/home/thkim/publication_files/JSTS13_NBTI.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/a3/c7/a3c746b84348886afecb5d41977666882590dfb2.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.5573/jsts.2013.13.2.87"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> Publisher / doi.org </button> </a>

Impacts of NBTI/PBTI and Contact Resistance on Power-Gated SRAM With High-$\kappa$ Metal-Gate Devices

Hao-I Yang, Wei Hwang, Ching-Te Chuang
<span title="">2011</span> <i title="Institute of Electrical and Electronics Engineers (IEEE)"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/uqbr2omxsbdgtaxslmblka2nnu" style="color: black;">IEEE Transactions on Very Large Scale Integration (vlsi) Systems</a> </i> &nbsp;
Meanwhile, the contact resistance of CMOS device increases sharply with technology scaling, especially in SRAM cells with minimum size and/or sub-ground rule devices.  ...  The threshold voltage ( TH ) drifts induced by negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) weaken PFETs and high-k metal-gate NFETs, respectively.  ...  , technology, and circuits.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/tvlsi.2010.2049038">doi:10.1109/tvlsi.2010.2049038</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/5naufovzl5dipnjigtstry2z6u">fatcat:5naufovzl5dipnjigtstry2z6u</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20170815025235/https://ir.nctu.edu.tw/bitstream/11536/22187/1/000292098600007.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/08/20/08206c45ed36ef9982f61d754bc7f9c98d0e7576.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/tvlsi.2010.2049038"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> ieee.com </button> </a>

Cost-Aware Lifetime Yield Analysis of Heterogeneous 3D On-chip Cache

Balaji Vaidyanathan, Yu Wang, Yuan Xie
<span title="">2009</span> <i title="IEEE"> 2009 IEEE International Workshop on Memory Technology, Design, and Testing </i> &nbsp;
Technology scaling is increasingly yielding diminishing returns in terms of product performance, power, and its yield.  ...  In this work, we propose to use heterogeneous 3D integration as an alternative means to manufacture SRAM with multiple technologies.  ...  The NBTI induced PMOS ∆V t shift is considered to be a combination of slow interface trapped charges and fast-hole-trapped charges in advanced technology (2) .  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/mtdt.2009.21">doi:10.1109/mtdt.2009.21</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/p4ykkrfyaffuvpkurzlvgtobwi">fatcat:p4ykkrfyaffuvpkurzlvgtobwi</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20140913020029/http://nics.ee.tsinghua.edu.cn:80/people/wangyu/conference/Balaji%20Vaidyanathan_MTDT2009.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/18/6e/186efd2a7b04961026fdd7e0e11409e25aba2247.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/mtdt.2009.21"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> ieee.com </button> </a>
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