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Optical TCAD on the Net: A tight-binding study of inter-band light transitions in self-assembled InAs/GaAs quantum dot photodetectors

Hoon Ryu, Dukyun Nam, Bu-Young Ahn, JongSuk Ruth Lee, Kumwon Cho, Sunhee Lee, Gerhard Klimeck, Mincheol Shin
2013 Mathematical and computer modelling  
We not only present a detailed description of the simulation methodology coupled to the atomistic sp 3 d 5 s * tight-binding band model, but also validate the suggested methodology with a focus on a proof  ...  of principle on small GaAs quantum dots (QDs).  ...  A part of this work has been carried out under support by the EDucation-research Integration through Simulation On the Net (EDISON) project funded by the Ministry of Education, Science and Technology,  ... 
doi:10.1016/j.mcm.2012.11.024 fatcat:z7l47qkybfaptgkfnoxahzth2i

Bandgap Engineering of Multi-Junction Solar Cells for Enhanced Performance Under Concentration

Alexandre W. Walker, Université D'Ottawa / University Of Ottawa, Université D'Ottawa / University Of Ottawa
Self-assembled InAs/GaAs quantum dots (QDs) are treated as an effective medium through a description of appropriate generation and recombination processes.  ...  /InGaAs quantum dots (QDs) in the middle sub-cell.  ...  Literature Review on InAs/GaAs Quantum Dots and Wells One of the most commonly used quantum dot (QD) systems for applications in III-V semiconductor devices is the InAs/GaAs QD system, mostly referred  ... 
doi:10.20381/ruor-3273 fatcat:ndiwhxhbavbmdf6k65t764yys4