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Impacts of NBTI/PBTI and Contact Resistance on Power-Gated SRAM With High-$\kappa$ Metal-Gate Devices
2011
IEEE Transactions on Very Large Scale Integration (vlsi) Systems
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The threshold voltage ( TH ) drifts induced by negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) weaken PFETs and high-k metal-gate NFETs, respectively. ...
This paper presents a comprehensive analysis on the impacts of NBTI and PBTI on power-gated SRAM arrays with high-k metal-gate devices and the combined effects with the contact resistance on SRAM cell ...
From 1986 to 1988, he was Manager of the Bipolar VLSI Design Group, working on low-power bipolar circuits, high-speed high-density bipolar SRAMs, multi-Gb/s fiber-optic data-link circuits, and scaling ...
doi:10.1109/tvlsi.2010.2049038
fatcat:5naufovzl5dipnjigtstry2z6u
Reliability Modeling and Mitigation for Embedded Memories
2019
2019 IEEE International Test Conference (ITC)
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Investigation of write path aging -The analysis of BTI impact on the SRAM write driver was performed for various supply voltages, temperatures, and technology nodes. ...
Complementary Metallic Oxide Semiconductor (CMOS) technology scaling enhances the performance, transistor density, functionality, and reduces cost and power consumption. ...
They target high performance, inter-mediate performance/power and low power respectively. ...
doi:10.1109/itc44170.2019.9000175
dblp:conf/itc/AgboTH19
fatcat:kok7bod22rd7bkxa4aizas65de
2021 Index IEEE Transactions on Electron Devices Vol. 68
2021
IEEE Transactions on Electron Devices
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Departments and other items may also be covered if they have been judged to have archival value. The Author Index contains the primary entry for each item, listed under the first author's name. ...
The primary entry includes the coauthors' names, the title of the paper or other item, and its location, specified by the publication abbreviation, year, month, and inclusive pagination. ...
., +, TED April 2021 1577-1584 Phase Transition Material-Assisted Low-Power SRAM Design. ...
doi:10.1109/ted.2021.3138305
fatcat:37sowz27xjc4bjhktlrldi2nja
Thimot_columbia_0054D_16366.pdf
[article]
2021
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The various wireless power and data telemetry techniques applicable for IMDs and their strengths and weaknesses will also be described. ...
Software techniques and implementation for real-time analysis of a high data rate communication system from the designed IMD will be covered. ...
This has made near-field magnetic coupling the go to method for wireless power transfer for high efficiency systems. ...
doi:10.7916/d8-chv7-nd73
fatcat:kgoch64udvdexa7bnhazlffrmy
Hybrid molecular solid state memories & electronic nanodevices based on Polyoxometalates & other molecules of reversible redox activity
[article]
2017
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storage, high information density, quick write-read operations, low power consumption, mechanical flexibility, bottom-up fabrication logic (overcoming the lithographic patterning constrains), conceptual ...
to their ability for reduction of size per cell and solution processing (low cost, injection-printing friendly), conceptual compatibility with photonic addressing due to molecular photosensitivity, multilevel ...
Acknowledgments This research was conducted at the Institute of Nanoscience & Nanotechnology of National Center for Scientific Research (NCSR) Demokritos in collaboration with the School of Chemical Engineering ...
doi:10.26240/heal.ntua.2439
fatcat:htav4paq25fvdjoe2acsrwhbea