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A SPICE-Compatible Model for a Gate/Body-Tied PMOSFET Photodetector With an Overlapping Control Gate

Sung-Hyun Jo, Myunghan Bae, Byoung-Soo Choi, Pyung Choi, Jang-Kyoo Shin
2015 Journal of Sensor Science and Technology  
Conventional SPICE models are based on complete depletion approximation, which is more applicable to reverse-biased p-n junctions; therefore, they are not appropriate for simulating circuits that are implemented  ...  The proposed sensor is fabricated using a 0.35 µm two-poly, four-metal standard complementary MOS (CMOS) process, and its characteristics are evaluated.  ...  The operating principle of this device is derived from the gate-body tied silicon-on-insulator (SOI) NMOSFET photosensor [11] . The device consists of a MOSFET and lateral and vertical BJTs.  ... 
doi:10.5369/jsst.2015.24.5.353 fatcat:fclbcck5gvdmzmzmj6x5dmvl3m

16×16 pixel silicon on sapphire CMOS digital pixel photosensor array

E. Culurciello, A.G. Andreou
2004 Electronics Letters  
The transparency of the sapphire substrate allows imaging from both the back and front side, opening possibilities for new and novel applications of CMOS photosensor arrays.  ...  A report on a 16 Â 16 pixel digital pixel photosensor array fabricated in silicon on sapphire CMOS technology is presented.  ...  Introduction: Silicon on sapphire (SOS-CMOS), is a flavour of silicon on insulator technologies where the transparency of the sapphire substrate to optical wavelengths from infrared to ultraviolet, opens  ... 
doi:10.1049/el:20040055 fatcat:ofiosxt3prfudnvma743izuwnu

High speed pin photodetector with ultra-wide spectral responses

C. Tam, C.-J. Chiang, M. Cao, M. Chen, M. Wong, A. Vazquez, J. Poon, K. Aihara, A. Chen, J. Frei, C. D. Johns, Ibrahim Kimukin (+6 others)
2005 Active and Passive Optical Components for WDM Communications V  
An InGaAs based detector was grown lattice matched to InP and the device was fabricated using a novel technique to facilitate the direct absorption of incoming photons in the InGaAs layer without being  ...  We report the design and fabrication of a high speed surface illuminated pin photodetector with a wide spectral response.  ...  The structure was grown on semi-insulating InP substrate. Initially highly Si doped InP layers were grown.  ... 
doi:10.1117/12.630103 fatcat:vrp4deo3q5ekvnwoyh4uvfudai

Reduced graphene oxide on silicon-based structure as novel broadband photodetector

Carmela Bonavolontà, Antonio Vettoliere, Giuseppe Falco, Carla Aramo, Ivo Rendina, Berardo Ruggiero, Paolo Silvestrini, Massimo Valentino
2021 Scientific Reports  
AbstractHeterojunction photodetector based on reduced graphene oxide (rGO) has been realized using a spin coating technique.  ...  The electrical and optical characterization of bare GO and thermally reduced GO thin films deposited on glass substrate has been carried out.  ...  Ferraro of CNR ISASI for useful scientific discussions and hints, and C. Granata of CNR ISASI for helpful discussions on samples preparations.  ... 
doi:10.1038/s41598-021-92518-z pmid:34155322 fatcat:3yxftkgl3zefhgnyayvm37gixi

Silicon-on-Insulator Microring Resonator Sensor Integrated on an Optical Fiber Facet

Cristina Lerma Arce, Katrien De Vos, Tom Claes, Katarzyna Komorowska, Dries Van Thourhout, Peter Bienstman
2011 IEEE Photonics Technology Letters  
This paper presents first sensing results for an optical fiber probe sensor based on silicon-on-insulator ring resonators.  ...  The ring resonator is transferred from a silicon-on-insulator (SOI) chip to the tip of an optical fiber maintaining the sensor performance of the ring measured on a SOI sample.  ...  DESIGN The silicon waveguides in our design are 220nm high and 450nm wide, on top of 2 µm of silicon oxide and 750 µm Si substrate.  ... 
doi:10.1109/lpt.2011.2143704 fatcat:lqm63s7nwfaudihuaaao4cxjji

Origami silicon optoelectronics for hemispherical electronic eye systems

Kan Zhang, Yei Hwan Jung, Solomon Mikael, Jung-Hun Seo, Munho Kim, Hongyi Mi, Han Zhou, Zhenyang Xia, Weidong Zhou, Shaoqin Gong, Zhenqiang Ma
2017 Nature Communications  
Using each polygon block as a sensor pixel, the silicon-based devices are shaped into maps of truncated icosahedron and fabricated on flexible sheets and further folded either into a concave or convex  ...  Digital image sensors in hemispherical geometries offer unique imaging advantages over their planar counterparts, such as wide field of view and low aberrations.  ...  Moreover, the fabrication process can be made compatible with existing CMOS sensor technology with extremely high densities by releasing the array of CMOS sensors fabricated on silicon-on-insulator (SOI  ... 
doi:10.1038/s41467-017-01926-1 pmid:29176549 pmcid:PMC5701179 fatcat:r6whs3qbgbaxnfd65hue7tmoia

Group IV crystalline nanomembranes: Materials, technology, and potential applications

Max G. Lagally
2009 2009 6th IEEE International Conference on Group IV Photonics  
Crystalline nanomembranes of Group IV elements offer a new perspective on potential photonic and optoelectronic structures, including flexible photodetectors, photonic crystals, wave guides, light sources  ...  , and oscillators.  ...  INTRODUCTION Silicon-on-insulator (SOI) (and equivalently germanium on insulator (GOI), and other variations) is the source for a new class of nanostructures, crystalline Group-IV semiconductor nanomembranes  ... 
doi:10.1109/group4.2009.5338346 fatcat:l6snavsjindr7jrnppoqohelgq

Graphene-based field effect transistors for radiation-induced field sensing

Alessandra Di Gaspare, Antonio Valletta, Guglielmo Fortunato, Rosanna Larciprete, Luigi Mariucci, Andrea Notargiacomo, Roberto Cimino
2016 Nuclear Instruments and Methods in Physics Research Section A : Accelerators, Spectrometers, Detectors and Associated Equipment  
Here, we present the implementation of graphene-based field effect transistor (Gr-FET) as radiation sensor.  ...  Besides, the high carrier mobility and the strong collective effects dominating the electronic transport have been exploited to realize a number of novel optical devices, including photodetectors operating  ...  In conclusion, we have presented our preliminary results on the development and the design of field effect transistors based on 2-dimensional layered materials usable as radiation sensors, based on graphene  ... 
doi:10.1016/j.nima.2015.08.066 fatcat:gtjqdeaeqja5vn2bcinon3bvfm

Silicon-integrated uncooled infrared detectors: Perspectives on thin films and microstructures

V. R. Mehta, S. Shet, N. M. Ravindra, A. T. Fiory, M. P. Lepselter
2005 Journal of Electronic Materials  
Uncooled infrared (IR) photodetectors for telecommunications, optical processor interconnects, and focal plane arrays are advantageously integrated into systems that are silicon based through advanced  ...  This paper reviews challenges of materials, microstructures, interfaces, and reactions of thin-film materials and technologies posed by such applications.  ...  ACKNOWLEDGEMENTS The authors acknowledge assistance from TMS, New Jersey Institute of Technology, Integron Solutions, BTL Fellows, and Lucent Technologies.  ... 
doi:10.1007/s11664-005-0055-z fatcat:7phyk2ka4vbxtb7zebluegm7ou

Bioresorbable Photonics: Materials, Devices and Applications

Xiaozhong Wu, Qinglei Guo
2021 Photonics  
In this paper, the recent progress on biodegradable photonics is reviewed, with a focus on material strategies, device architectures and their biomedical applications.  ...  Bio-photonic devices that utilize the interaction between light and biological substances have been emerging as an important tool for clinical diagnosis and/or therapy.  ...  The authors utilized a silicon membrane as the active material, designed vertical stacks of three PN junctions and used the transfer printing technique to integrate the photodetector on PLGA substrate.  ... 
doi:10.3390/photonics8070235 fatcat:zv3wh6wrufenfimh3x3fv2mnze

Programmable and scalable transfer printing with high reliability and efficiency for flexible inorganic electronics

Chengjun Wang, Changhong Linghu, Shuang Nie, Chenglong Li, Qianjin Lei, Xiang Tao, Yinjia Zeng, Yipu Du, Shun Zhang, Kaixin Yu, Hao Jin, Weiqiu Chen (+1 others)
2020 Science Advances  
with high reliability and efficiency.  ...  Systematic experimental and computational studies reveal the fundamental aspects of the extraordinary adhesion switchability of stamp.  ...  (H) Selectively printed Si nanomembrane-based photodetectors with a robot-like pattern on PDMS substrate.  ... 
doi:10.1126/sciadv.abb2393 pmid:32596472 pmcid:PMC7299632 fatcat:y76nx4tbjndy3cxvwscskmghhu

2020 Index IEEE Transactions on Nanotechnology Vol. 19

2020 IEEE transactions on nanotechnology  
., +, TNANO 2020 811-819 HfO 2 Gate Insulator on Colorless Polyimide Substrate.  ...  ., +, TNANO 2020 439-445 High Performance Transparent a-IGZO Thin Film Transistors With ALD-HfO 2 Gate Insulator on Colorless Polyimide Substrate.  ... 
doi:10.1109/tnano.2021.3055152 fatcat:5ilss2fujfhl7m7o5rvnjgewhm

III–V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2–4 μm Wavelength Range

Ruijun Wang, Anton Vasiliev, Muhammad Muneeb, Aditya Malik, Stephan Sprengel, Gerhard Boehm, Markus-Christian Amann, Ieva Šimonytė, Augustinas Vizbaras, Kristijonas Vizbaras, Roel Baets, Gunther Roelkens
2017 Sensors  
We first present results on the heterogeneous integration of 2.3 µm wavelength III-V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors.  ...  The third section focuses on the heterogeneously integrated 2.3 µm III-V laser sources and photodetectors on silicon waveguide circuits.  ...  Figure 14 . 14 (a) Microscope image of the 2.3 μm AWG spectrometer integrated with a InP-based type-II quantum well photodetector array; (b) wire bonded III-V-on-silicon AWG spectrometers on a PCB; (c)  ... 
doi:10.3390/s17081788 pmid:28777291 pmcid:PMC5579498 fatcat:pswjhmvzirblxhyqardr76sxnu

Sensitivity of fast-response nanographite photodetector at high temperature

Gennady M. Mikheev, Ruslan G. Zonov, Alexander N. Obraztsov, Yuri P. Svirko, Francesco Baldini, Jiri Homola, Robert A. Lieberman
2009 Optical Sensors 2009  
We studied performance of a fast-response nanographite film photodetector (PD) in the temperature range of 300-1000 K.  ...  In atmospheric conditions, we observed a stable operation of the NGF-based PD during several tens of hours in the temperature range from 300 to 580 K.  ...  CONCLUSIONS The fast PD based on a nanographite film deposited on a silicon substrate can operate under vacuum conditions at a temperature of up to 740 K.  ... 
doi:10.1117/12.820549 fatcat:kkxivk3gszbbvgqnqqco2ecxti

Harvesting the loss: surface plasmon-based hot electron photodetection

Wei Li, Jason G. Valentine
2016 Nanophotonics  
Here, we present a review on the recent developments concerning photodetection based on hot electrons. The basic principles and recent progress on hot electron photodetectors are summarized.  ...  The challenges and potential future directions are also discussed.  ...  The device was fabricated using a self-aligned approach of local oxidation of silicon (LOCOS) on a silicon on insulator substrate ( Figure 4B ).  ... 
doi:10.1515/nanoph-2015-0154 fatcat:clyrzgqshrerdazk4ds2tefnm4
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