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Modeling of Carrier Transport Dynamics at GHz-Frequencies for RF Circuit-Simulation
[chapter]
2004
Simulation of Semiconductor Processes and Devices 2004
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Carrier dynamics in a MOSFET channel under fast time-varying gate input is included in the modeling for circuit simulation and implemented in SPICE3f5 at only 7% increased computational runtime cost. ...
Conclusion The modeling of non-quasi-static (NQS) MOSFET behavior based on the time-delay of the carrier response, as applied for the circuit-simulation model HiSIM-NQS, has been described. ...
The model is particularly important to secure reliable circuit-simulation of RF-devices. ...
doi:10.1007/978-3-7091-0624-2_60
fatcat:r3tbp4x6xzb53oui4c32l4vnjm
HiSIM-HV: A Scalable, Surface-Potential-Based Compact Model for High-Voltage MOSFETs
[chapter]
2010
POWER/HVMOS Devices Compact Modeling
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Furthermore, HiSIM-HV's consistent potential-based approach enables the reproduction of all structure-dependent scaling properties of high-voltage MOSFET features with a single global parameter set. ...
The main features of the industry standard compact model HiSIM-HV for high-voltage MOSFETs are described. ...
, Surface-Potential-Based Compact Model
HiSIM-HV: A Scalable, Surface-Potential-Based Compact Model
HiSIM-HV: A Scalable, Surface-Potential-Based Compact Model
HiSIM-HV: A Scalable, Surface-Potential-Based ...
doi:10.1007/978-90-481-3046-7_2
fatcat:kp6gwwax6jcpzfizepwqj5cpbe
Semiconductor Device Modeling and Simulation for Electronic Circuit Design
[chapter]
2020
Modeling and Simulation in Engineering [Working Title]
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However, formulation of device model involves trade-off between accuracy and computational speed and for most practical operation such as for SPICE-based circuit simulator, empirical modeling approach ...
This chapter covers different methods of semiconductor device modeling for electronic circuit simulation. ...
Root et al. used table data to develop non-quasi-static FET models for RF simulation [35] . ...
doi:10.5772/intechopen.92037
fatcat:m25tk6f3gjc23jwzla25ct2tr4
Surface-Potential-Based MOS-Varactor Model for RF Applications
2006
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials
unpublished
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We have developed such an accurate MOS varactor model HiSIM-Varactor based on the surface-potential MOSFET model HiSIM by considering the majority carrier transit time. ...
For RF-circuit analysis, an accurate compact model for the MOS varactor is urgently desired. ...
It is shown that the MOS-varactor model has to include the non-quasi-static effect explicitly for predicting the features of the MOS varactor in RF operations. ...
doi:10.7567/ssdm.2006.h-7-3
fatcat:whyxtc5x55hwfevnujy4okx77m
MOSFET modeling for RF-CMOS design
ASP-DAC 2004: Asia and South Pacific Design Automation Conference 2004 (IEEE Cat. No.04EX753)
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Measured (open symbols) and calculated y parameters with the non-quasi-static model (solid curves) and the quasi-static model (dashed curves) for the gate length of 0.5µm. ...
The self-consistent charge-based model with the surface-potential description will be demonstrated to offer the basis for successful performing the foreseeable challenges. ...
doi:10.1109/aspdac.2004.1337624
fatcat:4mf4uzldqzh6rgitciry7zegxm
Leakage Models for High-Level Power Estimation
2018
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
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The framework consists of the model itself, a floorplan based temperature and voltage drop model, and a variation engine. ...
For a single transistor, the subthreshold leakage, its body potential controlled by ABB, and its operation speed all are highly correlated. ...
Non quasi static model: The split selectors TRNQSMOD and ACNQSMOD for transient and AC non quasi static modelling have to be set to the old value NQSMOD. ...
doi:10.1109/tcad.2017.2760519
fatcat:kchk4i7pwrhndhlaqdy4mlui7m
Compact modeling of high voltage MOSFETs
2007
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First, a highly scalable general high voltage MOSFET model, for the first time, is presented, which can be used for any high voltage MOSFET with extended drift region. ...
For the first time, noise modeling of lateral non-uniformly doped MOS-FET is carried out and validated on the device simulation. ...
Adrian Mihai Ionescu for the support, confidence Acknowledgements Abstract ...
doi:10.5075/epfl-thesis-3915
fatcat:2pkfq4iuybgl5pmjj4q2vuxj2a
Characterization and modeling of nanoscale MOSFET for ultra-low power RF IC design
2016
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I am also grateful to my amazing friend Eva for always providing me with a different perspective on any matter. ...
But, above all, I would like to thank my husband Antonios and our little star Chloe, for standing by me on all occasions, filling my life with love and joy. Their smile is just enough for me! ...
In parallel, Hirosima University has also been working on a MOSFET compact model, entitled HiSIM, which belongs also to the category of the surface-potential-based models. ...
doi:10.5075/epfl-thesis-7030
fatcat:kkg3jenpozhtfjk2vgqipfu3hu
Cryogenic MOSFET Modeling for Large-Scale Quantum Computing
2021
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model from Chapter 4 unless the MB approximation is violated in strong inversion for the sake of compactness and the ability to derive an analytical model. ...
for the subthreshold-slope factor, explaining its apparent 1/T -dependence. ...
While these enhancements could be performed for any of the industrial CMs, we choose to use a charge-based compact modeling approach, because it is a preferred choice for low-power analog/RF circuits at ...
doi:10.5075/epfl-thesis-8365
fatcat:u7pjg6uxpne4bisruisxa5k7vm