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Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Amador Pérez-Tomás
2019 Advanced Materials Interfaces  
Nondegenerate transparent semi-conducting oxides (TSOs) are also widely investigated as the semiconductor platform for many applications, including; solar cells (see e.g. [59] , [51] ), display's thin-film  ...  Another key factor in the adoption of oxide semiconductors is that they are compatible with the strict manufacturing requirements of large-scale, large-volume, flexible, low cost and disposable/reusable  ...  The ICN2 is funded by the CERCA programme / Generalitat de Catalunya and by the Severo Ochoa programme of the Spanish Ministry of Economy, Industry and Competitiveness (MINECO, grant no.  ... 
doi:10.1002/admi.201900471 fatcat:ypssywb5njbqnhdo76bqjxnoum

Memristor nanodevice for unconventional computing:review and applications [article]

Mahyar Shahsavari
2017 arXiv   pre-print
A memristor is a two-terminal nanodevice that its properties attract a wide community of researchers from various domains such as physics, chemistry, electronics, computer and neuroscience.The simple structure  ...  Thepotential applications of memristor are presented and a wide domain of applications are explainedand classified.  ...  Memristor classification based on different materials and applications A memristor is generally made from a metal-insulator-metal (MIM) sandwich with the insulator usually consisting of a thin film like  ... 
arXiv:1703.00331v1 fatcat:vn5udtsj2jga5f5c3x6ufdrfqi

Perspective on photonic memristive neuromorphic computing

Elena Goi, Qiming Zhang, Xi Chen, Haitao Luan, Min Gu
2020 PhotoniX  
Neuromorphic computing applies concepts extracted from neuroscience to develop devices shaped like neural systems and achieve brain-like capacity and efficiency.  ...  This new field combines the advantages of photonics and neuromorphic architectures to build systems with high efficiency, high interconnectivity and high information density, and paves the way to ultrafast  ...  Acknowledgements The authors thank all the members of the LAIN Laboratory for the inspiring discussions. Authors' contributions All the authors contribute to the preparation of the manuscript.  ... 
doi:10.1186/s43074-020-0001-6 fatcat:qvhwulx7ova4lnijjhtwnpunqe

High order synaptic learning in neuro-mimicking resistive memories [article]

Taimur Ahmed, Sumeet Walia, Edwin Mayes, Rajesh Ramanathan, Vipul Bansal, Madhu Bhaskaran, Sharath Sriram, Omid Kavehei
2018 arXiv   pre-print
Here, an electroforming-free and complementary metal oxide semiconductor (CMOS)-compatible memristor based on oxygen-deficient SrTiO_3-x (STO_x) is reported to imitate synaptic learning rules.  ...  The potential of such memristors to behave as artificial synapses is demonstrated by successfully implementing high order time- and rate-dependent synaptic learning rules.  ...  fabrication: The STO x synaptic devices are fabricated as cross-point devices and array in metal-insulator-metal (MIM) configuration with active areas of 2×2 µm 2 , 4×4 µm 2 , 10×10 µm 2 , 20×20 µm 2 ,  ... 
arXiv:1804.06688v1 fatcat:6gsli7lmyjc3dd66cclzyprsde

Challenges in materials and devices for Resistive-Switching-based Neuromorphic Computing [article]

Javier del Valle, Juan Gabriel Ramírez, Marcelo J. Rozenberg and Ivan K. Schuller
2018 arXiv   pre-print
In Chapter III, we describe a variety of Resistive Switching phenomena, which may serve as the functional basis for the implementation of key devices for Neuromorphic computing.  ...  In Chapter IV we describe why transition metal oxides, are promising materials for future Neuromorphic machines.  ...  The development of bio-inspired hybrids (IKS) was supported by the Vannevar Bush  ... 
arXiv:1812.01120v1 fatcat:pi3oapmwhfe4paiajgp7zrvway

2022 Roadmap on Neuromorphic Computing and Engineering [article]

Dennis V. Christensen, Regina Dittmann, Bernabé Linares-Barranco, Abu Sebastian, Manuel Le Gallo, Andrea Redaelli, Stefan Slesazeck, Thomas Mikolajick, Sabina Spiga, Stephan Menzel, Ilia Valov, Gianluca Milano (+47 others)
2022 arXiv   pre-print
These needs can be addressed by neuromorphic computing systems which are inspired by the biological concepts of the human brain.  ...  built-in capabilities to learn or deal with complex data as our brain does.  ...  Acknowledgements The research was funded in part by C-BRIC, one of six centres in JUMP, a Semiconductor Research Corporation (SRC) program sponsored by DARPA, the National Science Foundation, the Technology  ... 
arXiv:2105.05956v3 fatcat:pqir5infojfpvdzdwgmwdhsdi4

Towards Oxide Electronics: a Roadmap

M. Coll, J. Fontcuberta, M. Althammer, M. Bibes, H. Boschker, A. Calleja, G. Cheng, M. Cuoco, R. Dittmann, B. Dkhil, I. El Baggari, M. Fanciulli (+44 others)
2019 Applied Surface Science  
Here we present the current state of the integration of epitaxial oxide films with silicon and other semiconductors, and we discuss some of the current and future challenges.  ...  Abstract The current status of experimental point defect characterization of oxide thin films is briefly reviewed. The primary focus is on complex oxides, in particular perovskite oxide thin films.  ...  Dennis Valbjørn Christensen for their valuable comments and sug-gestion as well as for reading the manuscript.  ... 
doi:10.1016/j.apsusc.2019.03.312 fatcat:3rqm2kwuv5gk3dpmb4sv7mg6ui

Two Dimensional Near Atom Thickness Materials for Emerging Neuromorphic Devices and Applications

Tae-Jun Ko, Hao Li, Sohrab Alex Mofid, Changhyeon Yoo, Emmanuel Okogbue, Sang Sub Han, Mashiyat Sumaiya Shawkat, Adithi Krishnaprasad, Molla Manjurul Islam, Durjoy Dev, Yongjun Shin, Kyu Hwan Oh (+3 others)
2020 iScience  
Lastly, the challenges associated with the successful implementation of 2D materials into large-scale devices and their material quality control will be outlined along with the future prospect of these  ...  Such attributes unattainable with traditional electronic materials are particularly promising for high-performance artificial neurons and synapses, enabling energy-efficient operation, high integration  ...  The main advantages of 2D TMDs as neuromorphic channels over conventional materials (e.g., metal oxides) include (1) layered ''crystallinity'' for reliable operation versus ''amorphous'' metal oxides that  ... 
doi:10.1016/j.isci.2020.101676 pmid:33163934 pmcid:PMC7600392 fatcat:qngn3zqhn5fvrbstpytawxllda

Stochastic Resonance in Organic Electronic Devices

Yoshiharu Suzuki, Naoki Asakawa
2022 Polymers  
Therefore, the focus is on OFETs using materials such as organic materials with unstable electrical properties and critical elements due to unidirectional signal transmission, such as neural synapses.  ...  SR has been observed in nonlinear response systems, such as biological and artificial systems, and this review will focus mainly on examples of previous studies of mathematical models and experimental  ...  Furthermore, metal-insulator-transition in VO 2 thin film device was used as a nonlinear responding system in naturally parallelized Collions model [24] .  ... 
doi:10.3390/polym14040747 pmid:35215663 pmcid:PMC8878602 fatcat:qmxmhv7zu5cypg7igs4oh5lgxq

Neuropunk Revolution. Hacking Cognitive Systems towards Cyborgs 3.0 [article]

Max Talanov, Jordi Vallverdu, Andrew Adamatzky, Alexander Toschev, Alina Suleimanova, Alexey Leukhin, Ann Posdeeva, Yulia Mikhailova, Alice Rodionova, Alexey Mikhaylov, Alexander Serb, Sergey Shchanikov (+9 others)
2022 arXiv   pre-print
tissues in close loop system as well as robotic systems inspired by the biological processes again integrated with biological objects.  ...  We see bio-plausible simulations implemented by digital computers or spiking networks memristive hardware as promising bridge or middleware between digital and (neuro)biological domains.  ...  of the atomic structure in thin dielectric or semiconductor films of nanometer thickness under the action of electric field / current.  ... 
arXiv:2205.06538v1 fatcat:vegmu5373zblbbxorson5ggesy

Highly energy efficient neuromorphic computing based on memcapacitive devices [article]

Kai-Uwe Demasius, Universitäts- Und Landesbibliothek Sachsen-Anhalt, Martin-Luther Universität, Stuart S. P. Parkin, Christian Wenger, Ralf B. Wehrspohn
2021
Experimental devices and crossbars were fabricated at the micrometer scale and an image recognition algorithm with letters "M", "P" and "I" is shown on 156 synaptic devices.  ...  (Mem)-capacitive devices can similarly be employed with the advantage of lower static power consumption, but they suffer from a poor dynamic range and scalability.  ...  I want to acknowledge Karola Richter (TU Dresden) for RIE etching, Claudia Richter from Namlab gGmbH for the hafnium zirconium oxide deposition and Jan Krügener of the University of Hannover for the ion  ... 
doi:10.25673/39742 fatcat:tw5du3n2njdovh4o3htqxvfxq4

2021 Roadmap on Neuromorphic Computing and Engineering [article]

Arnab Neelim Mazumder, Morteza Hosseini, Tinoosh Mohsenin, Et Al., Maryland Shared Open Access Repository
2021
built-in capabilities to learn or deal with complex and unstructured data as our brain does.  ...  In this architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously.  ...  Acknowledgements The research was funded in part by C-BRIC, one of six centres in JUMP, a Semiconductor Research Corporation (SRC) program sponsored by DARPA, the National Science Foundation, the Technology  ... 
doi:10.13016/m2n6ua-rira fatcat:vyxf3tz2g5cptgzrqctyzftocq

Towards Oxide Electronics: a Roadmap [article]

M. Coll, J. Fontcuberta, M. Althammer, M. Bibes, H. Boschker, A. Calleja, G. Cheng, M. Cuoco, R. Dittmann, B. Dkhil, I. El Baggari, M. Fanciulli (+45 others)
2020
Dennis Valbjørn Christensen for their valuable comments and sug-gestion as well as for reading the manuscript.  ...  Acknowledgements We acknowledge fruitful interactions with our many collaborators in the realm of artificial quantum materials, especially the groups of Acknowledgements The authors acknowledge funding  ...  Challenges on the way can be found at the device level (decrease power consumption, increase lifetime), at the array level (fabricate dense 3D crossbar arrays of these elements) and at the system level  ... 
doi:10.34657/3597 fatcat:2w75pizz7bfo7bywgkpcevn43i

Applications of memristors in conventional analogue electronics

Radu Berdan, Christos Papavassiliou, Chris Toumazou, Engineering And Physical Sciences Research Council
2016
Its performance is quantified against linear resistors, crossbars of linear resistors, stand-alone memristive elements and crossbars of memristors.  ...  This platform allows for a wide range of different pulsing algorithms to be applied on individual devices, or on crossbars of memristive elements, and is used throughout this dissertation.  ...  Neural Network CMOS Complementary Metal Oxide Semiconductor DrAS Dr.  ... 
doi:10.25560/43370 fatcat:yr5ss54agrbyvimeosx6h3wdae

Characterisation of Novel Resistive Switching Memory Devices

Z Chai
2017
HfO 2 is one of the most matured metal-oxide materials in semiconductor industry and HfO 2 RRAM shows promising potential in practical application.  ...  non-filamentary device with a set of Abstract ii unique characteristics, but its resistive switching mechanism has not been clearly understood yet.  ...  Acknowledgements Song of the Parting Son Meng Jiao (751-814) From the threads a mother's hands weaves, A gown for parting son is made.  ... 
doi:10.24377/ljmu.t.00006937 fatcat:xzv5r4rhkjea3meoc27nntzwze