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Mixing of submillimeter wave radiation in metal-metal and metal-semiconductor point contact diodes∗
1979
Infrared Physics
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Point contact diodes of tungsten on metal and tungsten on semiconductors were used as direct mixers of twa submillimeter lasers. ...
The observed behavior was in some respects inconsistent with the mechanisms usually advanced to explain the operation of such diodes. ...
mixing in these point contact diodes. ...
doi:10.1016/0020-0891(79)90045-9
fatcat:lbh4f7sdwbeylem2rnt2jgl6bm
Page 68 of Applied Physics. A and B Vol. A35, Issue 2
[page]
1984
Applied Physics. A and B
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The Whisker
Usually, a point-contact diode consists of a thin tungsten whisker antenna mechanically contacting either a polished metal post, a semiconductor crystal, or a vacuum-evaporated metal (semiconductor ...
In heterodyne detection two electromagnetic waves of different frequencies f, and f, mix in a nonlinear device and produce an electrical signal with the difference frequency f, —f,. ...
Generation of tunable far-infrared radiation with a quantum cascade laser
2002
Optics Letters
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We demonstrate the generation of cw tunable far-infrared radiation by mixing a quantum cascade laser and a CO 2 laser in a W -Ni metal-insulator -metal diode. ...
The first known spectroscopic application to the recording of an H 79 Br transition near 4.47 THz is reported. ...
We dedicate this work to the memory of Kenneth M. Evenson. *On leave from the Dipartimento di Scienze Ambientali, Seconda Università di Napoli, via Vivaldi 43, 81100 Caserta, Italy. ...
doi:10.1364/ol.27.000521
pmid:18007852
fatcat:yyznlisytrbnlg23khewlcfcyy
Design, Optimization and Fabrication of a 28.3 THz Nano-Rectenna for Infrared Detection and Rectification
2014
Scientific Reports
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An infrared rectenna is a combination of a receiving nano antenna and a THz rectifying diode. ...
The relatively high frequency of operation for THz rectennas leads to challenges not only in the fabrication of the nano antennas but also in the rectification process, since typical semiconductors based ...
Part of this work was done at King Saud University, Saudi Arabia, and was supported by the National Science, Technology and Innovation Plan (NSTIP) under grant no. 09-NAN861-02. ...
doi:10.1038/srep04270
pmid:24599374
pmcid:PMC3944318
fatcat:ppvv6ig2azhuhioo4uung2nige
Progress and Challenges Towards Terahertz CMOS Integrated Circuits
2010
IEEE Journal of Solid-State Circuits
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VCO with an on-chip patch antenna in 45-nm CMOS, and a 125-GHz Schottky diode frequency doubler, a 50-GHz phase-locked loop with a frequency doubled output at 100 GHz, a 180-GHz Schottky diode detector ...
Index Terms-CMOS, detector, frequency doubler, on-chip patch antenna, Schottky barrier diode, VCO. ...
The substrate losses associated with the transistors, varactors and metal lines are complicated by the fact that the plasma frequencies of doped silicon are near the operating frequency. ...
doi:10.1109/jssc.2010.2049793
fatcat:h73qwud3ibgrdbvkor4eduhpe4
Avalanche Characteristics Of Silicide Schottky Barrier Diodes
1988
Infrared Optical Materials IV
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Diode
Figure 1 . 1 Energy band diagrams of metal and semiconductor before (a) and after (b) contact. ...
Fermi level prior to metal-semiconductor contact. ...
doi:10.1117/12.945847
fatcat:z45ofsdiqng53b45mwjg4dnmta
Ultrahigh speed graphene diode with reversible polarity
2012
Solid State Communications
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We fabricated submicron geometric diodes by patterning and etching exfoliated graphene. ...
The diode consists of a thin graphene film with a geometric asymmetry that determines a preferred direction for charge-carrier transport, independent of whether the carriers are electrons or holes. ...
which is supported by the National Science Foundation (Grant ECS-0335765). ...
doi:10.1016/j.ssc.2012.06.013
fatcat:l22bv2nygjfnppcgpys75by6jm
[Back cover]
1980
IEEE Journal of Quantum Electronics
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Light-emitting diodes; Photodiodes; p-i-n
diodes;
Point-contact
diodes;
Punchthrough
diodes;
Schottky-barrier diodes
Semiconductor heterojunctions;
c f . ...
using Si echelette grating; Fujii, Yohji; J -Q l Feb 80 165-169 W-Ni point contact MBM diodes; comparison with W-Si J-QE Dec 80 1372-134 point-contact Schottk diodes at 9.5 GHz; Yasuoka, Yoshizumi; Silicon ...
appropriate reuse of this material by others. ...
doi:10.1109/jqe.1980.1070417
fatcat:mqgxk2r7bbblbll3fxpp7lmkxu
Acronyms & technical terms
2002
III-Vs review
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We present a comprehensive listing of acronyms and technical terms relevant to the semiconductor industry. ...
New devices or variants of older ones are continually being derived so if you have coined a new acronym -or if we have omitted any -then please feel free to contact us so that they can be added in the ...
Micro-Optical Mechanical System
Multi-wavelength Optical Network
MetalOrganic Reactive Ion Etching
Metal Oxide Semiconductor
Metal Oxide Semiconductor Field Effect Transistor
Metal Organic Vapour ...
doi:10.1016/s0961-1290(02)85235-8
fatcat:ld5f2xk535cmjdvt3vljy6yubm
Terahertz sources
2011
Journal of Biomedical Optics
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THz low-frequency vibrational modes are involved in many biological, chemical, and solid state physical processes. C 2011 Society of Photo-Optical Instrumentation Engineers (SPIE). ...
We present an overview and history of terahertz (THz) sources for readers of the biomedical and optical community for applications in physics, biology, chemistry, medicine, imaging, and spectroscopy. ...
Acknowledgments This work is supported in part by internal IUSL funds, DoD, NASA, and NYSTAR's Photonic Student Training program for high school and undergraduate students. ...
doi:10.1117/1.3554742
pmid:21456861
fatcat:j3krsodxbneohm3aewwalnpgey
Optical frequency measurements
1986
Proceedings of the IEEE
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This paper is a review of the history of the measurement of coherent optical frequencies. ...
The development of frequency measurement from the Cs frequency standard to the visible is traced. ...
MIM, the metal to semiconductor, ]osephson-junc(;on, and Schottky diodes. ...
doi:10.1109/proc.1986.13430
fatcat:5l5gwh63s5gwrcpdd7ngw3zww4
Impact of optical antennas on active optoelectronic devices
2014
Nanoscale
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Remarkable progress has been made in the fabrication and characterization of optical antennas that are integrated with optoelectronic devices. ...
Acknowledgements This work is partially supported by ARO through award #W911NF-11-1-0390, and NSF through award # ECCS-1206155 and # ECCS-1310620. ...
We initially fabricated and measured single 55 and coupled metal-oxide-metal antennas 54 on the facet of QCLs operating near l of $6 mm. ...
doi:10.1039/c4nr02419b
pmid:25139058
fatcat:p5jveyzkojaatid4bufmyzqiha
Ultrafast 27 GHz cutoff frequency in vertical WSe2 Schottky diodes with extremely low contact resistance
2020
Nature Communications
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Our semitransparent vertical WSe2 Schottky diodes could be a key component of future high frequency electronics in the era of fifth-generation wireless communication. ...
reliable applications using two-dimensional semiconductors. ...
Data availability The authors confirm that the data supporting the findings of this study are available within the article and its supplementary materials from the corresponding authors upon reasonable ...
doi:10.1038/s41467-020-15419-1
pmid:32221285
pmcid:PMC7101435
fatcat:66j6mnp2o5av5d4ujhafecn2di
Low-frequency noise in epitaxially grown Schottky junctions
2007
Journal of Applied Physics
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The low-frequency power spectrum has been measured for ErAs:InAlGaAs diodes and shows at least a ten-times reduction of 1/f noise compared to traditional Al Schottky diodes on the same semiconductor material ...
The low-frequency power spectrum has been measured for ErAs:InAlGaAs diodes and shows at least a ten-times reduction of 1 / f noise compared to traditional Al Schottky diodes on the same semiconductor ...
In traditional Schottky diodes, the metal-semiconductor interface marks the termination of the single-crystal semi-conductor and the beginning of a polycrystalline metal. ...
doi:10.1063/1.2721774
fatcat:2eq4wfkwjjfmdivucr3vi7lcjq
Applications of CdTe. A review
1977
Revue de Physique Appliquée
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the near and the far infrared. ...
Optical mixing [25] and continuous second harmonic generation [26] using CdTe have also been demonstrated, and finally the Franz-Keldysch effect has been used for modulation in the very near infrared ...
doi:10.1051/rphysap:01977001202027700
fatcat:cqv5stw7mzgj5fsaztelhdwpge
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