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Mixing of submillimeter wave radiation in metal-metal and metal-semiconductor point contact diodes∗

P.J. Epton, W.L. Wilson, F.K. Tittel, T.A. Rabson
1979 Infrared Physics  
Point contact diodes of tungsten on metal and tungsten on semiconductors were used as direct mixers of twa submillimeter lasers.  ...  The observed behavior was in some respects inconsistent with the mechanisms usually advanced to explain the operation of such diodes.  ...  mixing in these point contact diodes.  ... 
doi:10.1016/0020-0891(79)90045-9 fatcat:lbh4f7sdwbeylem2rnt2jgl6bm

Page 68 of Applied Physics. A and B Vol. A35, Issue 2 [page]

1984 Applied Physics. A and B  
The Whisker Usually, a point-contact diode consists of a thin tungsten whisker antenna mechanically contacting either a polished metal post, a semiconductor crystal, or a vacuum-evaporated metal (semiconductor  ...  In heterodyne detection two electromagnetic waves of different frequencies f, and f, mix in a nonlinear device and produce an electrical signal with the difference frequency f, —f,.  ... 

Generation of tunable far-infrared radiation with a quantum cascade laser

Gianluca Gagliardi, Silvia Viciani, Massimo Inguscio, Paolo De Natale, Claire Gmachl, Federico Capasso, Deborah L. Sivco, James N. Baillargeon, Albert L. Hutchinson, Alfred Y. Cho
2002 Optics Letters  
We demonstrate the generation of cw tunable far-infrared radiation by mixing a quantum cascade laser and a CO 2 laser in a W -Ni metal-insulator -metal diode.  ...  The first known spectroscopic application to the recording of an H 79 Br transition near 4.47 THz is reported.  ...  We dedicate this work to the memory of Kenneth M. Evenson. *On leave from the Dipartimento di Scienze Ambientali, Seconda Università di Napoli, via Vivaldi 43, 81100 Caserta, Italy.  ... 
doi:10.1364/ol.27.000521 pmid:18007852 fatcat:yyznlisytrbnlg23khewlcfcyy

Design, Optimization and Fabrication of a 28.3 THz Nano-Rectenna for Infrared Detection and Rectification

M. N. Gadalla, M. Abdel-Rahman, Atif Shamim
2014 Scientific Reports  
An infrared rectenna is a combination of a receiving nano antenna and a THz rectifying diode.  ...  The relatively high frequency of operation for THz rectennas leads to challenges not only in the fabrication of the nano antennas but also in the rectification process, since typical semiconductors based  ...  Part of this work was done at King Saud University, Saudi Arabia, and was supported by the National Science, Technology and Innovation Plan (NSTIP) under grant no. 09-NAN861-02.  ... 
doi:10.1038/srep04270 pmid:24599374 pmcid:PMC3944318 fatcat:ppvv6ig2azhuhioo4uung2nige

Progress and Challenges Towards Terahertz CMOS Integrated Circuits

Eunyoung Seok, Dongha Shim, Chuying Mao, Ruonan Han, Swaminathan Sankaran, Changhua Cao, Wojciech Knap, Kenneth K. O
2010 IEEE Journal of Solid-State Circuits  
VCO with an on-chip patch antenna in 45-nm CMOS, and a 125-GHz Schottky diode frequency doubler, a 50-GHz phase-locked loop with a frequency doubled output at 100 GHz, a 180-GHz Schottky diode detector  ...  Index Terms-CMOS, detector, frequency doubler, on-chip patch antenna, Schottky barrier diode, VCO.  ...  The substrate losses associated with the transistors, varactors and metal lines are complicated by the fact that the plasma frequencies of doped silicon are near the operating frequency.  ... 
doi:10.1109/jssc.2010.2049793 fatcat:h73qwud3ibgrdbvkor4eduhpe4

Avalanche Characteristics Of Silicide Schottky Barrier Diodes

Kenneth L. Yates, Eustace L. Dereniak, Solomon Musikant
1988 Infrared Optical Materials IV  
Diode Figure 1 . 1 Energy band diagrams of metal and semiconductor before (a) and after (b) contact.  ...  Fermi level prior to metal-semiconductor contact.  ... 
doi:10.1117/12.945847 fatcat:z45ofsdiqng53b45mwjg4dnmta

Ultrahigh speed graphene diode with reversible polarity

Garret Moddel, Zixu Zhu, Sachit Grover, Saumil Joshi
2012 Solid State Communications  
We fabricated submicron geometric diodes by patterning and etching exfoliated graphene.  ...  The diode consists of a thin graphene film with a geometric asymmetry that determines a preferred direction for charge-carrier transport, independent of whether the carriers are electrons or holes.  ...  which is supported by the National Science Foundation (Grant ECS-0335765).  ... 
doi:10.1016/j.ssc.2012.06.013 fatcat:l22bv2nygjfnppcgpys75by6jm

[Back cover]

1980 IEEE Journal of Quantum Electronics  
Light-emitting diodes; Photodiodes; p-i-n diodes; Point-contact diodes; Punchthrough diodes; Schottky-barrier diodes Semiconductor heterojunctions; c f .  ...  using Si echelette grating; Fujii, Yohji; J -Q l Feb 80 165-169 W-Ni point contact MBM diodes; comparison with W-Si J-QE Dec 80 1372-134 point-contact Schottk diodes at 9.5 GHz; Yasuoka, Yoshizumi; Silicon  ...  appropriate reuse of this material by others.  ... 
doi:10.1109/jqe.1980.1070417 fatcat:mqgxk2r7bbblbll3fxpp7lmkxu

Acronyms & technical terms

2002 III-Vs review  
We present a comprehensive listing of acronyms and technical terms relevant to the semiconductor industry.  ...  New devices or variants of older ones are continually being derived so if you have coined a new acronym -or if we have omitted any -then please feel free to contact us so that they can be added in the  ...  Micro-Optical Mechanical System Multi-wavelength Optical Network MetalOrganic Reactive Ion Etching Metal Oxide Semiconductor Metal Oxide Semiconductor Field Effect Transistor Metal Organic Vapour  ... 
doi:10.1016/s0961-1290(02)85235-8 fatcat:ld5f2xk535cmjdvt3vljy6yubm

Terahertz sources

Pavel Shumyatsky, Robert R. Alfano
2011 Journal of Biomedical Optics  
THz low-frequency vibrational modes are involved in many biological, chemical, and solid state physical processes. C 2011 Society of Photo-Optical Instrumentation Engineers (SPIE).  ...  We present an overview and history of terahertz (THz) sources for readers of the biomedical and optical community for applications in physics, biology, chemistry, medicine, imaging, and spectroscopy.  ...  Acknowledgments This work is supported in part by internal IUSL funds, DoD, NASA, and NYSTAR's Photonic Student Training program for high school and undergraduate students.  ... 
doi:10.1117/1.3554742 pmid:21456861 fatcat:j3krsodxbneohm3aewwalnpgey

Optical frequency measurements

D.A. Jennings, K.M. Evenson, D.J.E. Knight
1986 Proceedings of the IEEE  
This paper is a review of the history of the measurement of coherent optical frequencies.  ...  The development of frequency measurement from the Cs frequency standard to the visible is traced.  ...  MIM, the metal to semiconductor, ]osephson-junc(;on, and Schottky diodes.  ... 
doi:10.1109/proc.1986.13430 fatcat:5l5gwh63s5gwrcpdd7ngw3zww4

Impact of optical antennas on active optoelectronic devices

Alireza Bonakdar, Hooman Mohseni
2014 Nanoscale  
Remarkable progress has been made in the fabrication and characterization of optical antennas that are integrated with optoelectronic devices.  ...  Acknowledgements This work is partially supported by ARO through award #W911NF-11-1-0390, and NSF through award # ECCS-1206155 and # ECCS-1310620.  ...  We initially fabricated and measured single 55 and coupled metal-oxide-metal antennas 54 on the facet of QCLs operating near l of $6 mm.  ... 
doi:10.1039/c4nr02419b pmid:25139058 fatcat:p5jveyzkojaatid4bufmyzqiha

Ultrafast 27 GHz cutoff frequency in vertical WSe2 Schottky diodes with extremely low contact resistance

Sung Jin Yang, Kyu-Tae Park, Jaeho Im, Sungjae Hong, Yangjin Lee, Byung-Wook Min, Kwanpyo Kim, Seongil Im
2020 Nature Communications  
Our semitransparent vertical WSe2 Schottky diodes could be a key component of future high frequency electronics in the era of fifth-generation wireless communication.  ...  reliable applications using two-dimensional semiconductors.  ...  Data availability The authors confirm that the data supporting the findings of this study are available within the article and its supplementary materials from the corresponding authors upon reasonable  ... 
doi:10.1038/s41467-020-15419-1 pmid:32221285 pmcid:PMC7101435 fatcat:66j6mnp2o5av5d4ujhafecn2di

Low-frequency noise in epitaxially grown Schottky junctions

A. C. Young, J. D. Zimmerman, E. R. Brown, A. C. Gossard
2007 Journal of Applied Physics  
The low-frequency power spectrum has been measured for ErAs:InAlGaAs diodes and shows at least a ten-times reduction of 1/f noise compared to traditional Al Schottky diodes on the same semiconductor material  ...  The low-frequency power spectrum has been measured for ErAs:InAlGaAs diodes and shows at least a ten-times reduction of 1 / f noise compared to traditional Al Schottky diodes on the same semiconductor  ...  In traditional Schottky diodes, the metal-semiconductor interface marks the termination of the single-crystal semi-conductor and the beginning of a polycrystalline metal.  ... 
doi:10.1063/1.2721774 fatcat:2eq4wfkwjjfmdivucr3vi7lcjq

Applications of CdTe. A review

F.V. Wald
1977 Revue de Physique Appliquée  
the near and the far infrared.  ...  Optical mixing [25] and continuous second harmonic generation [26] using CdTe have also been demonstrated, and finally the Franz-Keldysch effect has been used for modulation in the very near infrared  ... 
doi:10.1051/rphysap:01977001202027700 fatcat:cqv5stw7mzgj5fsaztelhdwpge
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