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Compact MOS Modelling for RF CMOS Circuit Simulation
[chapter]
2001
Simulation of Semiconductor Processes and Devices 2001
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This imposes stringent requirements on compact models used in circuit simulation: not only currents and charges, but also noise, power gain, impedances, and harmonic distortion must be modelled accurately ...
In this paper several of these issues will be addressed with the help of Philips' new public-domain compact MOS model, MOS Model 1 1. ...
High-frequency distortion and non-quasi-static effects Finally we discuss the impact of NQS effects on RF distortion. In Fig. 14, 1 GHz distortion data for a 2pm n-channel transistor are shown. ...
doi:10.1007/978-3-7091-6244-6_43
fatcat:jvojynjk55fslbp26zy7vfvwoe
DC and Large-Signal Microwave MOSFET Model Applicable to Partially-Depleted, Body-Contacted SOI Technology
2007
IEEE MTT-S International Microwave Symposium Digest
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A new compact DC and large-signal physics-based non-quasi-static (NQS) MOSFET model is proposed, suitable for partially-depleted body-tied silicon-on-insulator (SOI) MOSFETs. ...
NQS distributed channel behaviour is accounted for by using a segmented channel model allowing the model in principle to operate up to high mm-wave frequencies. ...
ACKNOWLEDGEMENT The authors wish to acknowledge the supported of Science Foundation Ireland. This work has been partially performed under The Walloon Region Conventions 03/1/5623 and 114751. ...
doi:10.1109/mwsym.2007.380558
fatcat:sm32ak2qcfh4tcoseg3fhbgtgm
The New CMC Standard Compact MOS Model PSP: Advantages for RF Applications
2009
IEEE Journal of Solid-State Circuits
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Examples from circuit design are used to illustrate the benefits of the PSP model. ...
The surface-potential-based compact MOS model PSP is reviewed with special emphasis to features of interest to analog and RF designers. ...
Features of the PSP model that are of special importance for RF applications include the extensive noise modeling, the description of non-quasi-static (or transit time) effects [16] , and the option for ...
doi:10.1109/jssc.2009.2015821
fatcat:xoxmmtevonf6xphxxrnq6nymaa
An investigation on RF CMOS stability related to bias and scaling
2002
Solid-State Electronics
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Due to the fact that CMOS device has continuously shrunk in size, a detailed discussion of the effect of MOSFETs dimension on stability is included. ...
In recent times, CMOS devices have played an increasing important role in the area of RF-ICs to implement part of the high-frequency circuits. ...
The channel charging resistance that represents the non-quasi-static effect of channel charges would increase the k-factor as observed in Eq. (6). ...
doi:10.1016/s0038-1101(01)00319-7
fatcat:yaeraeqvgzcl5ojd7uod2wqrf4
Design automation methodology and rf/analog modeling for rf CMOS and SiGe BiCMOS technologies
2003
IBM Journal of Research and Development
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The rapidly expanding telecommunications market has led to a need for advanced rf integrated circuits. ...
Complex rf-and mixed-signal system-on-chip designs require accurate prediction early in the design schedule, and time-to-market pressures dictate that design iterations be kept to a minimum. ...
Acknowledgments The authors wish to acknowledge the many individuals in IBM who contributed to the SiGe program and are responsible for the current position of SiGe technology in the marketplace. ...
doi:10.1147/rd.472.0139
fatcat:pejbk72rafbfxkagylkctnet24
Associative Memories Using Complex-Valued Hopfield Networks Based on Spin-Torque Oscillator Arrays
[article]
2022
arXiv
pre-print
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Simulations show that the network functions well when the resonant frequency of the oscillators can be tuned to have a fractional spread less than 10^-3, depending on the strength of the feedback. ...
Pseudo-inverse training suffices to store at least 12 images in a set of 192 oscillators, representing 16×12 pixel images. The energy required to recover an image depends on the desired error level. ...
(A.1) lead to where we neglect the φ 1 cos(ωt+ζ) inside the cos because it leads to higher harmonics and static contributions that are higher order in φ 1 . ...
arXiv:2112.03358v2
fatcat:pvhivkpcbnhfjdluutnwqatygm
Silicon Field Effect Transistor as the Nonlinear Detector for Terahertz Autocorellators
2018
Sensors
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We demonstrate that the rectifying field effect transistor, biased to the subthreshold regime, in a large signal regime exhibits a super-linear response to the incident terahertz (THz) power. ...
oscillating voltage amplitude, which is delivered to the device. ...
These parameters are obtained by fitting the measured quasi-static drain-source resistance using the procedure described in [26] . ...
doi:10.3390/s18113735
pmid:30400183
fatcat:nsoptwnerjginmalesasfgutau
MOSFET modeling for RF-CMOS design
ASP-DAC 2004: Asia and South Pacific Design Automation Conference 2004 (IEEE Cat. No.04EX753)
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Measured (open symbols) and calculated y parameters with the non-quasi-static model (solid curves) and the quasi-static model (dashed curves) for the gate length of 0.5µm. ...
The group (B) focuses on carrier dynamics under highfrequency operation in the time domain, which is often transormed to the frequency domain with the harmonic balance analysis. ...
doi:10.1109/aspdac.2004.1337624
fatcat:4mf4uzldqzh6rgitciry7zegxm
Wrath of Grapes Redux [Microwave Surfing]
2022
IEEE Microwave Magazine
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Lei Gu for 3D printing the base support for the amplifier and the script to design the magnetic components.
Acknowledgments I would like to thank Prof. ...
Internet of Things Networks
Acknowledgment The authors would like to thank Prof. ...
) 6 Gate capacitance (fF/nm 2 ) >10 <1 Operating frequencies Up to gigahertz Up to tens of gigahertz Power consumption in digital circuits Ultra-low-power MOSFET Power-inefficient MESFET Wafer diameter ...
doi:10.1109/mmm.2021.3131836
fatcat:2plpjwniuffhvelgnt7zq4ebtm
International Conference on Theoretical Physics Dubna-Nano 2010
2010
Journal of Physics, Conference Series
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To find the origin of the CVC features in the breakpoint region [4,5], we simulate the time dependence of the charge in superconducting layers and demonstrate that its features related to the features ...
Conclusions with respect to application of such arrays such as radiation sources were given [7]. ...
Having small sized active and tunable devices operating at frequencies up to the Terahertz (THz) range is one of the goals of modern electronics. ...
doi:10.1088/1742-6596/248/1/011001
fatcat:2kevj3aiozf3bcxbtxvkwn26mm
International Conference on Theoretical Physics: Dubna-Nano 2012
2012
Journal of Physics, Conference Series
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To find the origin of the CVC features in the breakpoint region [4,5], we simulate the time dependence of the charge in superconducting layers and demonstrate that its features related to the features ...
Conclusions with respect to application of such arrays such as radiation sources were given [7]. ...
Having small sized active and tunable devices operating at frequencies up to the Terahertz (THz) range is one of the goals of modern electronics. ...
doi:10.1088/1742-6596/393/1/011001
fatcat:2gnbdziuxze5fb75cnt7lyxezq
The International Conference on Theoretical Physics `Dubna-Nano2008'
2008
Journal of Physics, Conference Series
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To find the origin of the CVC features in the breakpoint region [4,5], we simulate the time dependence of the charge in superconducting layers and demonstrate that its features related to the features ...
Conclusions with respect to application of such arrays such as radiation sources were given [7]. ...
Having small sized active and tunable devices operating at frequencies up to the Terahertz (THz) range is one of the goals of modern electronics. ...
doi:10.1088/1742-6596/129/1/011001
fatcat:n2ywxfc2wbbtvofiodjxe3b7eq
Electronic crystals: an experimental overview
[article]
2013
arXiv
pre-print
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This article reviews the static and dynamic properties of spontaneous superstructures formed by electrons. ...
A special attention is paid to the collective effects in pinning and sliding of these superstructures, and the glassy properties at low temperature. ...
Finally, I am grateful to Professor, David Sherrington, the Editor, for giving me the opportunity to write this review, and for having been so patient in waiting for its submission. ...
arXiv:1307.0929v1
fatcat:ll5oenhkpvf63jf4xc35um4fvi
Field-cycling NMR relaxometry
2004
Progress in nuclear magnetic resonance spectroscopy
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Acknowledgements Grants by the Deutsche Forschungsgemeinschaft, the Alexander von Humboldt foundation, DAAD, Foncyt-ANPCyT and CONICET are gratefully acknowledged. ...
By varying the temperature, all three dispersion regimes show up in the experimental frequency window one by one. ...
In the mesophase of PDES, two power law regimes show up again, but with larger exponents and a cross-over frequency shifted by a factor of about 10 (after correction for the different temperatures) to ...
doi:10.1016/j.pnmrs.2004.03.002
fatcat:p2nze734dzbmtekqsvevdpfvcy
Field-Cycling NMR Relaxometry
[chapter]
1997
NMR
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Acknowledgements Grants by the Deutsche Forschungsgemeinschaft, the Alexander von Humboldt foundation, DAAD, Foncyt-ANPCyT and CONICET are gratefully acknowledged. ...
By varying the temperature, all three dispersion regimes show up in the experimental frequency window one by one. ...
In the mesophase of PDES, two power law regimes show up again, but with larger exponents and a cross-over frequency shifted by a factor of about 10 (after correction for the different temperatures) to ...
doi:10.1007/978-3-642-60582-6_15
fatcat:itfjgqyy4fbjdkhspceybsz5nm
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