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Melting-Induced Enhancement of the Second-Harmonic Generation from Metal Nanoparticles

A. M. Malvezzi, M. Allione, M. Patrini, A. Stella, P. Cheyssac, R. Kofman
2002 Physical Review Letters  
The maximum pulse fluence on the sample is 5 10 ÿ3 J=cm 2 at the 0.9 mm diameter focal spot of the 4 m focusing lens used in the experiment.  ...  The maximum pulse fluence on the sample is 5 10 ÿ3 J=cm 2 at the 0.9 mm diameter focal spot of the 4 m focusing lens used in the experiment.  ... 
doi:10.1103/physrevlett.89.087401 pmid:12190498 fatcat:hlvsk7zx5na33h4g3stnezoy44

Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures

M. Geddo, M. Patrini, G. Guizzetti, M. Galli, R. Trotta, A. Polimeni, M. Capizzi, F. Martelli, S. Rubini
2011 Journal of Applied Physics  
M. Chen (Taylor & Francis, New York, 2004), and  ... 
doi:10.1063/1.3597818 fatcat:ch4rsowuhrd6zfntursgytgoem

Metamorphic buffers and optical measurement of residual strain

M. Geddo, G. Guizzetti, M. Patrini, T. Ciabattoni, L. Seravalli, P. Frigeri, S. Franchi
2005 Applied Physics Letters  
The resulting ϰt −1/2 dependence of the residual in-plane strain on buffer thickness t can be used to design metamorphic buffers not only for 1.3-1.55 m emitting quantum dot structures, but also for sophisticated  ...  Avanzini, and M. Bertocchi for valuable technical assistance.  ...  It has been experimentally shown [8] [9] [10] and modeled 10 that, in such a way, the operation wavelength can be redshifted toward the 1.3-1.55 m range, as a consequence of the reduced energy gap of  ... 
doi:10.1063/1.2159106 fatcat:fgqyktjbtnbjhm2qeoxpeorphy

Quantum dot strain engineering of InAs∕InGaAs nanostructures

L. Seravalli, M. Minelli, P. Frigeri, S. Franchi, G. Guizzetti, M. Patrini, T. Ciabattoni, M. Geddo
2007 Journal of Applied Physics  
This approach can be used to redshift beyond 1.31 m and, possibly, towards 1.55 m the room-temperature light emission of InAs quantum dots embedded in InGaAs confining layers grown on GaAs substrates.  ...  The proposed approach has been used to redshift the room-temperature light emission wavelength up to 1.44 m.  ...  Avanzini, and M. Bertocchi for valuable technical assistance.  ... 
doi:10.1063/1.2424523 fatcat:q6wfg3pburfmrjxipu3mtizh7q

k-space spectroscopy of photonic crystal slabs

M. Galli, M. Belotti, M. Patrini, D. Gerace, L.C. Andreani, Y. Chen
2008 2008 10th Anniversary International Conference on Transparent Optical Networks  
Suspended membrane structures 20 µm wide by 200 µm long were obtained by selectively removing the SiO 2 cladding in an HF solution.  ... 
doi:10.1109/icton.2008.4598596 fatcat:77zvbkieivhdnkwo7yghc5exw4

Photonic bands in patterned silicon-on-insulator waveguides

M. Patrini, M. Galli, F. Marabelli, M. Agio, L.C. Andreani, D. Peyrade, Y. Chen
2002 IEEE Journal of Quantum Electronics  
M. Patrini, M. Galli, F. Marabelli, M. Agio, and L. C. Andreani are with the INFM and Dipartimento di Fisica "A.  ...  The thicknesses of the silicon and insulator layers were 0.26 m and 1 m, respectively.  ...  M. Agio was born in Piacenza, Italy, in 1975. He received the diploma (laurea) in physics from the University of Pavia, Pavia, Italy, in 1999.  ... 
doi:10.1109/jqe.2002.1017602 fatcat:qq2po3mrqng7nabyr573r3dtrq

Slow to superluminal light waves in thin 3D photonic crystals

J. F. Galisteo-López, M. Galli, A. Balestreri, M. Patrini, L. C. Andreani, C. López
2007 Optics Express  
Phase measurements on self-assembled three-dimensional photonic crystals show that the group velocity of light can flip from small positive (slow) to negative (superluminal) values in samples of a few µm  ...  Galisteo-López, M. Galli, M. Patrini, A. Balestreri, L.C. Andreani and C.  ...  The time needed for a reference pulse to traverse a distance in vacuum equal to the sample thickness (4 μ m) is 13.5 fs.  ... 
doi:10.1364/oe.15.015342 pmid:19550820 fatcat:lhflbjcupng23gwe5kzvpqhiie

An all optical mapping of the strain field in GaAsN/GaAsN:H wires

M. Geddo, E. Giulotto, M. S. Grandi, M. Patrini, R. Trotta, A. Polimeni, M. Capizzi, F. Martelli, S. Rubini
2012 Applied Physics Letters  
Bissirri, M. Capizzi, M. Fischer, M. Reinhardt, and A. Forchel, Phys. Rev. B 63, 201304(R) (2001). 3 M. Berti, G. Bisognin, D. De Salvador, E. Napolitani, S. Vangelista, A. Polimeni, M. Capizzi, F.  ...  Polimeni, M. Capizzi, F. Martelli, S. Rubini, M. Francardi, A. Gerardino, and L. Mariucci, Appl. Phys. Lett. 94, 261905 (2009). 2 A. Polimeni, G. Baldassarri H€ oger von H€ ogersthal, H. M.  ... 
doi:10.1063/1.4766285 fatcat:flyndmfcpveibhvuo4abcow74m

Morphology and optical properties of bare and polydiacetylenes-infiltrated opals

D. Comoretto, F. Marabelli, C. Soci, M. Galli, E. Pavarini, M. Patrini, L.C. Andreani
2003 Synthetic metals  
We are also indebted with M. Michetti and C. Uliana for the SEM images. D.C. would like to thank Prof. G. Dellepiane for her support to this work.  ...  Fig. 1 . 1 Left panel: AFM topography image of a 6.7 m × 6.7 m surface of an opal film with 222 nm spheres. The white line indicates the region where the height profile (right panel) is recorded.  ...  The light of a Xe arc-lamp was collimated and then focused to a spot of 100 m diameter on the sample surface.  ... 
doi:10.1016/s0379-6779(03)00324-2 fatcat:6yka4p3rvjaq7frinharoxppz4

Fabrication and optical measurements of silicon on insulator photonic nanostructures

D. Peyrade, Y. Chen, A. Talneau, M. Patrini, M. Galli, F. Marabelli, M. Agio, L.C. Andreani, E. Silberstein, P. Lalanne
2002 Microelectronic Engineering  
Fig. 3(b) shows the photonic band structure of the graphite lattice (sample b) along G-K and G-M directions.  ... 
doi:10.1016/s0167-9317(02)00539-7 fatcat:e75hnecwxrdjnl5cpl65k3fpxm

Excitation of radiative and evanescent defect modes in linear photonic crystal waveguides

M. Galli, M. Belotti, D. Bajoni, M. Patrini, G. Guizzetti, D. Gerace, M. Agio, L. C. Andreani, Y. Chen
2004 Physical Review B  
The patterned area of the samples was 300 ϫ 300 m 2 , and W1 line defects were repeated with different supercell periodicities d = m ͱ 3a (with m =4,5,6) along the ⌫-M direction.  ...  Si core and 1-m-thick SiO 2 cladding.  ... 
doi:10.1103/physrevb.70.081307 fatcat:p5gqc5eblbdl7dcj3xu4f3foum

Grating couplers on porous silicon planar waveguides for sensing applications

X. Wei, C. Kang, M. Liscidini, G. Rong, S. T. Retterer, M. Patrini, J. E. Sipe, S. M. Weiss
2008 Journal of Applied Physics  
period, and m is an integer.  ...  In the calculation, the refractive indices at 1.55 m are taken to be n Ќ Х 1.81 for the core and n Ќ Х 1.26 for the high porosity layer.  ... 
doi:10.1063/1.3043579 fatcat:46k72ez4qffixkbslp7n44bwxm

P-type macroporous silicon for two-dimensional photonic crystals

P. Bettotti, L. Dal Negro, Z. Gaburro, L. Pavesi, A. Lui, M. Galli, M. Patrini, F. Marabelli
2002 Journal of Applied Physics  
M. Galli, M. Patrini, and F. Marabelli Macroporous silicon with two-dimensional periodicity has been produced by electrochemical etching, using a p-type doped silicon substrate.  ...  In addition, with DMSO the mean area was about 0.45 m 2 ͑pore radius of 0.38 and the filling factor was between 27% and 37%, whereas with DMF the mean area was about 0.8 m 2 ͑pore radius of 0.5 and  ... 
doi:10.1063/1.1515127 fatcat:pldbgav7a5dr3encmprpiuihmi

Attomole (amol) myoglobin Raman detection from plasmonic nanostructures

G. Das, F. Mecarini, F. De Angelis, M. Prasciolu, C. Liberale, Maddalena Patrini, E. Di Fabrizio
2008 Microelectronic Engineering  
We have demonstrated the fabrication of nano-structures using electro-plating and electron beam lithography techniques to obtain a pattern of gold nanograin aggregate structures of diameter in the range between 80 and 100 nm with interstitial gap of 10-30 nm. The nanostructure based SERS substrate enables one to have better control and reproducibility on generation of plasmon polaritons. Using calculation, we have shown that Raman spectra are derived for the myoglobin concentration down up to
more » ... tomole. These results are obtained using drop coating deposition Raman (DCDR) method in which solution of interest is microdeposited (2 lL) on SERS substrate.
doi:10.1016/j.mee.2007.12.082 fatcat:emlxuejbi5fnhcbatjphkgmgem

Resonant second-harmonic generation in a GaAs photonic crystal waveguide

A. M. Malvezzi, G. Vecchi, M. Patrini, G. Guizzetti, L. C. Andreani, F. Romanato, L. Businaro, E. Di Fabrizio, A. Passaseo, M. De Vittorio
2003 Physical Review B (Condensed Matter)  
., resonant two-photon absorption͒ for the optical spectroscopy of crystalline solids. 18 The sample employed in the present study is an air/GaAs/ AlGaAs waveguide ͑nominally 500-nm GaAs, 1.5-m Al 0.25  ...  consists of epitaxial growth, electron-beam and x-ray lithography, and reactive-ion etching. 19 A scanningelectron micrograph of the sample is shown in the inset to Fig. 1 ; the etch depth is about 1 m.  ...  Notice that a photonic band cannot be characterized by a polarization label ͑except along the highsymmetry directions ⌫-X and ⌫-M of the square lattice͒.  ... 
doi:10.1103/physrevb.68.161306 fatcat:rmhk5pyklbbchb4zilnqwkquxe
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