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A Survey of fault models and fault tolerance methods for 2D bus-based multi-core systems and TSV based 3D NOC many-core systems [article]

Shashikiran Venkatesha, Ranjani Parthasarathi
2022 arXiv   pre-print
The article presents a gamut of fault tolerance solutions from logic level to processor core level in a multi-core and many-core scenario.  ...  Reliability has taken centre stage in the development of high-performance computing processors.  ...  It is worth observing that for the same technology node, the Qcrit of FinFET SRAM and planner CMOS SRAM are same.  ... 
arXiv:2203.07830v1 fatcat:dsbx3o4v3femhi5d6kfrurzuoi

Study on the critical parameters of the electrical behavior of triple gate junctionless finfets and circuit simulations

Κοσμάς Νικολάου Ζιώγας
2021
In the final pages there is an Appendix A with the device model and an Appendix B describing the next steps to insert the device in a PDK  ...  Finally, the is a Conclusions chapter where we are discussing about future work and improvements and changes there need to be made in order to be closer to the production of the real industry world.  ...  Acknowledgements In this Thesis I always had the support and guidance of my Supervisor, Associate Professor Dimitrios Tassis and I would like to thank him for all the support, effort and work he has put  ... 
doi:10.26262/heal.auth.ir.330770 fatcat:epwarxdmgvghxfi5yg7ssdndiq

Robustness Analysis of Controllable-Polarity Silicon Nanowire Devices and Circuits

Hassan Ghasemzadeh Mohammadi
2016
Consequently, making progress in reliable circuit design and test necessitates both to develop efficient fault models for emerging technologies and to revise the current test method according to the related  ...  (b) Cross view of a FinFET transistor [13] The quantization of transistor width in FinFET circuit design is completely different than the continuous values of the planar technology.  ... 
doi:10.5075/epfl-thesis-6924 fatcat:h7ug2otl2bfxnlk6ddyxcebtfu

Hybrid molecular solid state memories & electronic nanodevices based on Polyoxometalates & other molecules of reversible redox activity [article]

Angeliki Maria Balliou, National Technological University Of Athens, National Technological University Of Athens
2017
ACCORDING to ITRS 2.0 2015, memory technologies will continue to drive pitch scaling and highest transistor count.  ...  Inspired from this fact, this work focuses on molecular flash memories and logic switching molecular networks which, among all emerging technology candidates, are considered particularly promising due  ...  Acknowledgments This research was conducted at the Institute of Nanoscience & Nanotechnology of National Center for Scientific Research (NCSR) Demokritos in collaboration with the School of Chemical Engineering  ... 
doi:10.26240/heal.ntua.2439 fatcat:htav4paq25fvdjoe2acsrwhbea