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Membrane III-V/Si DFB Laser using Uniform Grating and Width-Modulated Si Waveguide

Takuma Aihara, Tatsurou Hiraki, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo
<span title="">2020</span> <i title="Institute of Electrical and Electronics Engineers (IEEE)"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/eo7ayeunzba63co4cxddmhlwma" style="color: black;">Journal of Lightwave Technology</a> </i> &nbsp;
Membrane buried-heterostructure III-V/Si distributed feedback (DFB) lasers with a stopband-modulated cavity on a Si substrate have been developed.  ...  The membrane III-V layers with 230-nm thickness enable us to construct an optical supermode with a 220-nm-thick Si waveguide that is used in standard Si photonics platform.  ...  We have proposed to use membrane buried-heterostructure (BH) lasers whose III-V layer thickness is less than 350 nm [16] - [21] .  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/jlt.2020.2978808">doi:10.1109/jlt.2020.2978808</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/7e5m2gxasngjdndes7ydidvqtu">fatcat:7e5m2gxasngjdndes7ydidvqtu</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20201108150450/https://ieeexplore.ieee.org/ielx7/50/9102216/09027881.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/e1/3b/e13bd983f5e537e3244445906c140c7bc68a75d0.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/jlt.2020.2978808"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> ieee.com </button> </a>

III–V/Si integration technology for laser diodes and Mach–Zehnder modulators

Tatsurou Hiraki, Takuma Aihara, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo
<span title="2019-03-27">2019</span> <i title="Japan Society of Applied Physics"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/pucchvqa2nd23o2rzoaa3xmd7u" style="color: black;">Japanese Journal of Applied Physics</a> </i> &nbsp;
This paper reviews a technology to heterogeneously integrate III-V semiconductors on a Si platform for the laser diodes and high-efficiency Mach-Zehnder modulators (MZMs) of optical transceivers.  ...  The membrane laser diode shows a fiber coupled output power from the Si waveguide of 4.6 mW and single-mode lasing with a side-mode suppression ratio of 49 dB.  ...  Acknowledgments Part of the research results were achieved by "R&D on optical PLL device for receiving and monitoring optical signals", Commissioned Research of the National Institute of Information and  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.7567/1347-4065/ab0741">doi:10.7567/1347-4065/ab0741</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/6jpgknl5sffmpbqkzylmw6v6gu">fatcat:6jpgknl5sffmpbqkzylmw6v6gu</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20190504210303/https://iopscience.iop.org/article/10.7567/1347-4065/ab0741/pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/3f/5f/3f5f47bd4d0e2695d319ea23a816aa648ac0c01a.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.7567/1347-4065/ab0741"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> Publisher / doi.org </button> </a>

Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si

Takuro Fujii, Tatsurou Hiraki, Takuma Aihara, Hidetaka Nishi, Koji Takeda, Tomonari Sato, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo
<span title="2021-02-18">2021</span> <i title="MDPI AG"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/smrngspzhzce7dy6ofycrfxbim" style="color: black;">Applied Sciences</a> </i> &nbsp;
A limitation of a Si-based PIC is the lack of an efficient light source due to the indirect bandgap of Si; therefore, hybrid integration technology of III-V semiconductor lasers on Si is desirable.  ...  This paper reviews the evaluations conducted on our epitaxial growth technique using a directly bonded III-V membrane layer on a Si substrate.  ...  The lasers have a lateral-current injection structure and surface grating similar to those discussed in Section 3.1. The active-region length was 140 μm.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.3390/app11041801">doi:10.3390/app11041801</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/qynysbozgbbfdadfve5yrkxmsu">fatcat:qynysbozgbbfdadfve5yrkxmsu</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20210228211201/https://res.mdpi.com/d_attachment/applsci/applsci-11-01801/article_deploy/applsci-11-01801-v2.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/da/1c/da1c9ab34d76da49e6a7f726802a8daa7da38c22.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.3390/app11041801"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="unlock alternate icon" style="background-color: #fb971f;"></i> mdpi.com </button> </a>

AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth

Claire Besancon, Delphine Néel, Dalila Make, Joan Manel Ramírez, Giancarlo Cerulo, Nicolas Vaissiere, David Bitauld, Frédéric Pommereau, Frank Fournel, Cécilia Dupré, Hussein Mehdi, Franck Bassani (+1 others)
<span title="2021-12-28">2021</span> <i title="MDPI AG"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/smrngspzhzce7dy6ofycrfxbim" style="color: black;">Applied Sciences</a> </i> &nbsp;
A 3 µm-thick AlGaInAs-based MutiQuantum Wells (MQW) laser structure was grown onto on InP-SiO2/Si (InPoSi) wafer and compared to the same structure grown on InP wafer as a reference.  ...  In this paper, we review an advanced integration scheme of AlGaInAs-based laser sources on Si wafers by bonding a thin InP seed on which further regrowth steps are implemented.  ...  In our case, the use of buried heterostructures such as Buried Ridge Structure (BRS) or even Semi-Insulating Heterostructure (SIBH) could be a path to improve heat dissipation through InP lateral cladding  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.3390/app12010263">doi:10.3390/app12010263</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/l3bqz3ke7vbv5m7dzqskjuq2tm">fatcat:l3bqz3ke7vbv5m7dzqskjuq2tm</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20220504140522/https://mdpi-res.com/d_attachment/applsci/applsci-12-00263/article_deploy/applsci-12-00263.pdf?version=1640683418" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/58/62/58624811d4176d500adde57feba45ebda851716d.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.3390/app12010263"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="unlock alternate icon" style="background-color: #fb971f;"></i> mdpi.com </button> </a>

InP membrane integrated photonics research

Yuqing Jiao, Nobuhiko Nishiyama, J J G M van der Tol, Jorn P van Engelen, Vadim Pogoretskiy, Sander Reniers, Amir Abbas Kashi, Yi Wang, Victor Calzadilla, Marc Spiegelberg, Zizheng Cao, Kevin Williams (+2 others)
<span title="2020-11-16">2020</span> <i title="IOP Publishing"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/eyp5xnewwnaexe6wd24n75rseu" style="color: black;">Semiconductor Science and Technology</a> </i> &nbsp;
Recently a novel photonic integration technology, based on a thin InP-based membrane, is emerging.  ...  This technology offers monolithic integration of active and passive functions in a sub-micron thick membrane.  ...  Acknowledgments The authors from TU/e acknowledge the Dutch NWO Zwaartekracht Grant Research Center for Integrated Nanophotonics, the ERC Proof-of-Concept Grant IMOS4ALL and the EU H2020 projects WIPE  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1088/1361-6641/abcadd">doi:10.1088/1361-6641/abcadd</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/ocnbyqzb7ze7jhbb2xkcgqyzom">fatcat:ocnbyqzb7ze7jhbb2xkcgqyzom</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20210428045945/http://t2r2.star.titech.ac.jp/rrws/file/CTT100842146/ATD100000413/" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/81/65/8165f069af05f4f9bec791227feec1dc6c1b639d.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1088/1361-6641/abcadd"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> iop.org </button> </a>

III/V-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template

Yingtao Hu, Di Liang, Kunal Mukherjee, Youli Li, Chong Zhang, Geza Kurczveil, Xue Huang, Raymond G. Beausoleil
<span title="2019-10-09">2019</span> <i title="Springer Science and Business Media LLC"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/y5icnkvcrncrdfvhmtw3bdbma4" style="color: black;">Light: Science &amp; Applications</a> </i> &nbsp;
growth on Si.  ...  Here, we demonstrate a novel photonic integration method of epitaxial regrowth of III/V on a III/V-on-SOI bonding template to realize heterogeneous lasers on silicon.  ...  Thibeault for the useful discussion on fabrication, and support from the nanofabrication facilities at the University of California, Santa Barbara, as well as X.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1038/s41377-019-0202-6">doi:10.1038/s41377-019-0202-6</a> <a target="_blank" rel="external noopener" href="https://www.ncbi.nlm.nih.gov/pubmed/31645936">pmid:31645936</a> <a target="_blank" rel="external noopener" href="https://pubmed.ncbi.nlm.nih.gov/PMC6804852/">pmcid:PMC6804852</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/xmjgzcegbzbbre5pnameok7gve">fatcat:xmjgzcegbzbbre5pnameok7gve</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20201108003940/https://escholarship.org/content/qt34c4j56c/qt34c4j56c.pdf?t=qaoi5a" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/fc/d9/fcd9cee656e4b29365ec9bcabf98f2aa9e6a0dd2.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1038/s41377-019-0202-6"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="unlock alternate icon" style="background-color: #fb971f;"></i> Publisher / doi.org </button> </a> <a target="_blank" rel="external noopener" href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6804852" title="pubmed link"> <button class="ui compact blue labeled icon button serp-button"> <i class="file alternate outline icon"></i> pubmed.gov </button> </a>

III-V-on-Silicon Photonic Devices for Optical Communication and Sensing

Gunther Roelkens, Amin Abassi, Paolo Cardile, Utsav Dave, Andreas de Groote, Yannick de Koninck, Sören Dhoore, Xin Fu, Alban Gassenq, Nannicha Hattasan, Qiangsheng Huang, Sulakshna Kumari (+22 others)
<span title="2015-09-18">2015</span> <i title="MDPI AG"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/cnxq6dmp2ng33eo7iwn2sru7ea" style="color: black;">Photonics</a> </i> &nbsp;
However, with sub 100 nm thick bonding layers, the several micron thick buried oxide of the silicon-on-insulator photonic integrated circuit (PIC) is dominant in the thermal resistance of the device.  ...  We elaborate on the integration strategy and describe a broad range of devices realized on this platform covering a wavelength range from 850 nm to 3.85 μm.  ...  By optimizing the DVS-BCB bonding thickness and buried oxide thickness, the directionality can be optimized.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.3390/photonics2030969">doi:10.3390/photonics2030969</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/uz2nt3cj7rbuhjb3zgwtf4e4se">fatcat:uz2nt3cj7rbuhjb3zgwtf4e4se</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20180718221238/https://biblio.ugent.be/publication/7274793/file/7274837.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/63/a9/63a9d62f956329be58fed8d18679b454feb4ffae.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.3390/photonics2030969"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="unlock alternate icon" style="background-color: #fb971f;"></i> mdpi.com </button> </a>

Emerging heterogeneous integrated photonic platforms on silicon

Sasan Fathpour
<span title="2015-01-27">2015</span> <i title="Walter de Gruyter GmbH"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/54xrqqfxuvg2zdfzxmd3huzqxm" style="color: black;">Nanophotonics</a> </i> &nbsp;
Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths) and feasibility of electrically-injected lasers (at least at room temperature  ...  AbstractSilicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform.  ...  An electrically-injected InAsP/InGaAsP microdisk laser was later demonstrated [85] .  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1515/nanoph-2014-0024">doi:10.1515/nanoph-2014-0024</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/ozvzm654lrbhfbh42etxa5cehm">fatcat:ozvzm654lrbhfbh42etxa5cehm</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20200710155512/https://www.degruyter.com/downloadpdf/journals/nanoph/4/2/article-p143.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/f1/04/f10440218b09161d766bbd338083abb1f415190b.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1515/nanoph-2014-0024"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="unlock alternate icon" style="background-color: #fb971f;"></i> degruyter.com </button> </a>

III-V/silicon photonic integrated circuits for spectroscopic sensing in the 2um wavelength range

Ruijun Wang, Muhammad Muneeb, Anton Vasiliev, Aditya Malik, Stephan Sprengel, Gerhard Boehm, Ieva Simonyte, Augustinas Vizbaras, Kristijonas Vizbaras, Roel Baets, Markus-Christian Amann, Gunther Roelkens (+2 others)
<span title="2018-02-22">2018</span> <i title="SPIE"> Smart Photonic and Optoelectronic Integrated Circuits XX </i> &nbsp;
The AWGs are fabricated on a 200 mm SOI wafer with a 400 nm thick silicon device layer on a 2 μm buried oxide layer.  ...  Mesa definition Before Then a 200 nm thick SiN x layer is deposited on the III-V membrane as the hard mask for the following etching processes.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1117/12.2287380">doi:10.1117/12.2287380</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/4fkoly2tvnfpre74uxtw6sgo4m">fatcat:4fkoly2tvnfpre74uxtw6sgo4m</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20190427003619/https://biblio.ugent.be/publication/8602500/file/8603126.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/41/11/411172d87177d0e99e6070d4c60e5c4484df90f9.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1117/12.2287380"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> Publisher / doi.org </button> </a>

GaN nanostructuring for the fabrication of thin membranes and emerging applications

Ion TIGINYANU, Veaceslav URSAKI
<span title="">2014</span> <i title="The Scientific and Technological Research Council of Turkey"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/4sx63qtff5cvjpwii7ctiealqy" style="color: black;">Turkish Journal of Physics</a> </i> &nbsp;
In particular, we report on traditional methods of wet etching undercutting for membrane manufacturing, technologies applied for the fabrication of photonic crystal structures based on GaN nanomembranes  ...  We present a review of technological methods developed in recent years for the purpose of gallium nitride nanostructuring, with the main focus on fabrication of thin GaN membranes.  ...  membrane thickness was 140 nm.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.3906/fiz-1406-20">doi:10.3906/fiz-1406-20</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/dmtnxugbqvbqtbj4q2y6w222cu">fatcat:dmtnxugbqvbqtbj4q2y6w222cu</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20180603163710/http://journals.tubitak.gov.tr/physics/issues/fiz-14-38-3/fiz-38-3-4-1406-20.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/1a/50/1a50a6ceaf8705e6b33f07033e427c69b48b1746.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.3906/fiz-1406-20"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> Publisher / doi.org </button> </a>

Integration of active and passive photonic-crystal-based optoelectronic components

Sven Mahnkopf, Martin Kamp, Reinhard Marz, Guang-Hua Duan, Veronique Colson, Alfred Forchel, Ali Adibi, Axel Scherer, Shawn-Yu Lin
<span title="2004-07-09">2004</span> <i title="SPIE"> Photonic Crystal Materials and Devices II </i> &nbsp;
Before bonding, a layer of SiO 2 is deposited on both the InP sample (200 nm thick SiO 2 ) and on the Si wafer (1750 nm thick SiO 2 ) in order to increase the adhesion of BCB.  ...  Layer Material Thickness Doping Function 1 InP 200 nm n.i.d. Membrane 2 InGaAs 30 nm n.i.d Sacrificial layer 3 InP 300 nm n.i.d. Sacrificial layer 4 InGaAs 500 nm n.i.d.  ...  However, optically pumped PhC lasers are still possible. After the definition of grating couplers, the sample is bonded on a host-Si wafer with BCB.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1117/12.528308">doi:10.1117/12.528308</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/t2dmgu24g5emvat77msoqvnt4q">fatcat:t2dmgu24g5emvat77msoqvnt4q</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20200219091619/https://pure.tue.nl/ws/files/3563038/757861.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/eb/4e/eb4e88fb542bd911a2a14c1b4cca284a3c5f180e.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1117/12.528308"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> Publisher / doi.org </button> </a>

Germanium-based integrated photonics from near- to mid-infrared applications

Delphine Marris-Morini, Vladyslav Vakarin, Joan Manel Ramirez, Qiankun Liu, Andrea Ballabio, Jacopo Frigerio, Miguel Montesinos, Carlos Alonso-Ramos, Xavier Le Roux, Samuel Serna, Daniel Benedikovic, Daniel Chrastina (+2 others)
<span title="2018-09-26">2018</span> <i title="Walter de Gruyter GmbH"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/54xrqqfxuvg2zdfzxmd3huzqxm" style="color: black;">Nanophotonics</a> </i> &nbsp;
Ge is also very useful for the achievement of compact modulators and monolithically integrated laser sources on silicon.  ...  Seminal works on mid-IR optical sensing using integrated platforms will also be reviewed.  ...  Intensity modulation was also demonstrated in the 2-μm band by injecting current through a lateral p-i-n junction in a Ge on Insulator waveguide [93] .  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1515/nanoph-2018-0113">doi:10.1515/nanoph-2018-0113</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/x4noll56cnchjmyb66kuwvnf24">fatcat:x4noll56cnchjmyb66kuwvnf24</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20190428195936/https://re.public.polimi.it/retrieve/handle/11311/1068159/322445/nanoph-2018-0113.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/a9/bc/a9bc72e0d211263982ad62bb627305912d601acd.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1515/nanoph-2018-0113"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="unlock alternate icon" style="background-color: #fb971f;"></i> degruyter.com </button> </a>

Recent Advances Toward Optical Devices in Semiconductor-Based Photonic Crystals

H. Benisty, J.-M. Lourtioz, A. Chelnokov, S. Combrie, X. Checoury
<span title="">2006</span> <i title="Institute of Electrical and Electronics Engineers (IEEE)"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/yfvtieuumfamvmjlc255uckdlm" style="color: black;">Proceedings of the IEEE</a> </i> &nbsp;
Photonic integrated circuits, especially around new integrated lasers, are challenging directions of research for miniaturization and new functions in optical telecommunications.  ...  We review the basic physics behind such applications and underline the current status of this very active research field worldwide.  ...  The wavelength shift was found to be less than 10 nm from threshold to 3-A injection current.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/jproc.2006.873441">doi:10.1109/jproc.2006.873441</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/fwtjjemfz5hntmi2wc6rcwlryi">fatcat:fwtjjemfz5hntmi2wc6rcwlryi</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20170809041001/http://eportfolio.lib.ksu.edu.tw/user/T/0/T094000004/repository/%E6%B6%B2%E6%99%B6%E9%A1%AF%E7%A4%BA%E5%99%A8/Photonic%20Crystals.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/dd/5e/dd5ecf4522fb4ef3888ac0db55f9029996c997de.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/jproc.2006.873441"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> ieee.com </button> </a>

Towards monolithic integration of germanium light sources on silicon chips

Shinichi Saito, Abdelrahman Zaher Al-Attili, Katsuya Oda, Yasuhiko Ishikawa
<span title="2016-03-07">2016</span> <i title="IOP Publishing"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/eyp5xnewwnaexe6wd24n75rseu" style="color: black;">Semiconductor Science and Technology</a> </i> &nbsp;
However, the direct band gap energy is close to the indirect one, and significant engineering efforts are being made to convert Ge into an efficient gain material monolithically integrated on a Si chip  ...  C1 Quantum mechanical behaviours of a photon propagating in a waveguide. A Si 3 N 4 waveguide is fabricated on top of a Ge quantum-well with a thin buried oxide.  ...  Thus, low dark current was confirmed by lateral carrier injection [83] . In the next sections, we will review more technological details.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1088/0268-1242/31/4/043002">doi:10.1088/0268-1242/31/4/043002</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/sxkrjympbbe6djp5gfl2zvuk3i">fatcat:sxkrjympbbe6djp5gfl2zvuk3i</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20180723053952/https://eprints.soton.ac.uk/383893/1/Proof.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/5e/78/5e787dde5eefd8d7f8bb553113a1ed9fda479716.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1088/0268-1242/31/4/043002"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="unlock alternate icon" style="background-color: #fb971f;"></i> iop.org </button> </a>

Waveguide-coupled nanopillar metal-cavity light-emitting diodes on silicon

V. Dolores-Calzadilla, B. Romeira, F. Pagliano, S. Birindelli, A. Higuera-Rodriguez, P. J. van Veldhoven, M. K. Smit, A. Fiore, D. Heiss
<span title="2017-02-02">2017</span> <i title="Springer Nature"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/a4wan6l5o5dfzn767kyz7jqevi" style="color: black;">Nature Communications</a> </i> &nbsp;
to the grating coupler through the waveguide.  ...  The left axis corresponds to the chip-to-free space outcoupling efficiency, i.e. power diffracted upwards into the first diffraction order normalized by the power in the transverseelectric mode injected  ...  7 8 Supplementary Figure 2 : 82 Process flow to fabricate metal-cavity nanopillars coupled to waveguides in III-V membranes on silicon.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1038/ncomms14323">doi:10.1038/ncomms14323</a> <a target="_blank" rel="external noopener" href="https://www.ncbi.nlm.nih.gov/pubmed/28148954">pmid:28148954</a> <a target="_blank" rel="external noopener" href="https://pubmed.ncbi.nlm.nih.gov/PMC5296653/">pmcid:PMC5296653</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/boltbtyk3rh6pizvvbgnbsqkcu">fatcat:boltbtyk3rh6pizvvbgnbsqkcu</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20190309061851/http://pdfs.semanticscholar.org/f4a6/19398a7f394d07231e54647a3ffcb33f622f.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/f4/a6/f4a619398a7f394d07231e54647a3ffcb33f622f.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1038/ncomms14323"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="unlock alternate icon" style="background-color: #fb971f;"></i> nature.com </button> </a> <a target="_blank" rel="external noopener" href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5296653" title="pubmed link"> <button class="ui compact blue labeled icon button serp-button"> <i class="file alternate outline icon"></i> pubmed.gov </button> </a>
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