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L-shape based layout fracturing for e-beam lithography

Bei Yu, Jhih-Rong Gao, D. Z. Pan
2013 2013 18th Asia and South Pacific Design Automation Conference (ASP-DAC)  
Layout fracturing is a fundamental step in mask data preparation and e-beam lithography (EBL) writing.  ...  To increase EBL throughput, recently a new L-shape writing strategy is proposed, which calls for new L-shape fracturing, versus the conventional rectangular fracturing.  ...  Conclusions In this paper we have proposed two novel algorithms for EBL with the new L-shape based layout fracturing for shot number and sliver minimization.  ... 
doi:10.1109/aspdac.2013.6509604 dblp:conf/aspdac/YuGP13 fatcat:e7mxf7k56bgnhggvqzzoknjcdy

Assessment and comparison of different approaches for mask write time reduction

A. Elayat, T. Lin, E. Sahouria, S. F. Schulze, Wilhelm Maurer, Frank E. Abboud
2011 Photomask Technology 2011  
The paper will describe and compare the following techniques: optimized fracture, pre-fracture jog alignment, generalization of shot definition (L-shot), multi-resolution writing, optimized-based fracture  ...  The paper discusses the application of resolution enhancements and layout simplification techniques; the fracture step and optimization methods; mask writing and novel ideas for shot count reduction.  ...  L-shaped shots require a significant amount of innovation on the e-beam tool vendors' part.  ... 
doi:10.1117/12.902443 fatcat:f66huymqcfd5xlae2a5v2ypu2u

Design for manufacturability and reliability in extreme-scaling VLSI

Bei Yu, Xiaoqing Xu, Subhendu Roy, Yibo Lin, Jiaojiao Ou, David Z. Pan
2016 Science China Information Sciences  
Keywords design for manufacturability, design for reliability, VLSI CAD Citation Yu B, Xu X Q, Roy S, et al. Design for manufacturability and reliability in extreme-scaling VLSI.  ...  five decades, the number of transistors on a chip has increased exponentially in accordance with the Moore's law, and the semiconductor industry has followed this law as long-term planning and targeting for  ...  The authors would like to thank Meng LI and Wei YE at University of Texas for helpful comments. Conflict of interest The authors declare that they have no conflict of interest.  ... 
doi:10.1007/s11432-016-5560-6 fatcat:lz5ebjqeprbanbkgxqxjeouip4

Design for Manufacturing With Emerging Nanolithography

David Z. Pan, Bei Yu, Jhih-Rong Gao
2013 IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  
Index Terms-Design for manufacturing, double patterning, e-beam lithography (EBL), EUV lithography (EUVL), multiple patterning, nanolithography, physical design.  ...  , and electron-beam lithography.  ...  L. Liebmann and Dr. R. Puri, IBM, for their helpful discussions.  ... 
doi:10.1109/tcad.2013.2276751 fatcat:amxc565rjfg6bkliymbbbjczde

The Nanolithography Toolbox

Krishna Coimbatore Balram, Daron A. Westly, Marcelo I. Davanco, Karen E. Grutter, Qing Li, Thomas Michels, Christopher H. Ray, Richard J. Kasica, Christopher B. Wallin, Ian J. Gilbert, Brian A. Bryce, Gregory Simelgor (+17 others)
2016 Journal of Research of the National Institute of Standards and Technology  
Gerald Lopez is a Lithography Manager at the Quattrone Nanofabrication Facility at  ...  Dill is a Visual Information Specialist for the Center for Nanoscale Science and Technology at NIST. Neal Bertrand is an IT Specialist for the Center for Nanoscale Science and Technology at NIST.  ...  This article introduces in archival form the Nanolithography Toolbox, a platform-independent software package for scripted lithography pattern layout generation.  ... 
doi:10.6028/jres.121.024 fatcat:fnc3jruhlzcxtkv5e4re6majte

Study on various curvilinear data representations and their impact on mask and wafer manufacturing

Jin Choi, Soo Ryu, Sukho Lee, Minah Kim, JoonSoo Park, Peter Buck, Ingo Bork, Bhardwaj Durvasula, Sayalee Gharat, Nageswara Rao, Ravi Pai, Sandeep Koranne (+1 others)
2021 Journal of Micro/Nanopatterning, Materials, and Metrology  
However, as the ILT shape complexity and data volume increases further for 5 nm nodes and beyond, the explosion of mask pattern data file size becomes a major concern.  ...  Inverse lithography technology (ILT) optical proximity correction is going to play a critical role in addressing challenges of optical and EUV lithography as the industry pushes toward advanced nodes.  ...  Acknowledgments Some of this work was previously presented at SPIE Advanced Lithography 2021 and published in the proceedings of this conference. 21, 22  ... 
doi:10.1117/1.jmm.20.4.041403 fatcat:lqr2mdjjqfcfte5kafae47szh4

Resolution enhancement optimization methods in optical lithography with improved manufacturability

Xu Ma
2011 Journal of Micro/Nanolithography  
During the mask data preparation process, the mask pattern is first fractured into basic rectangles, and then fabricated by the variable-shaped-beam mask writing machine.  ...  Recently, various pixel-based OPC (PBOPC) approaches have been developed to improve the resolution of optical lithography systems.  ...  Subsequently, these rectangles are exposed by the variable-shaped-beam (VSB) mask writing machine. 9 First, the turned off electron-beam moves on a vector path and directly reaches the rectangle to be  ... 
doi:10.1117/1.3590252 fatcat:zmvuuhfq7rhjhobm7g5jtzuca4

Front Matter: Volume 8701

Proceedings of SPIE, Kokoro Kato
2013 Photomask and Next-Generation Lithography Mask Technology XX  
Morey-Chaisemartin, E. Beisser, XYALIS (France) 8701 0E Verification: an enabler for model based data preparation [8701-50] P. Schiavone, A. Chagoya, L. Martin, V. Annezo, A.  ...  KG (Germany) 8701 0Z E-beam resist outgassing for study of correlation between resist sensitivity and e-beam optic contamination [8701-54] S.-I. Lee, Y. S. Jeong, C. H. Park, H. B. Kim, I. Shin, C.  ... 
doi:10.1117/12.2032560 fatcat:a7zmhnned5c3xdt4r2fnulmjay

Application of signal reconstruction techniques to shot count reduction in simulation driven fracturing

Shangliang Jiang, Avideh Zakhor, Wilhelm Maurer, Frank E. Abboud
2011 Photomask Technology 2011  
Traditionally, Variable Shape Electron Beam (VSEB) mask writing tools generate pixel-based optical proximity correction (OPC) or inverse lithography technology (ILT) masks by first simplifying them into  ...  Our approach is based on overcomplete signal expansion algorithms which have traditionally been used for sparse representation and compression of images and videos.  ...  While our simulations only incorporate forward scattering, we can modify this step to allow for a more complex e-beam model.  ... 
doi:10.1117/12.897051 fatcat:47iszoyl2nb7thrhnipiekvpwa

Nanostructured 2D cellular materials in silicon by sidewall transfer lithography NEMS

Richard R A Syms, Dixi Liu, Munir M Ahmad
2017 Journal of Micromechanics and Microengineering  
Sidewall transfer lithography (STL) is demonstrated as a method for parallel fabrication of 2D nanostructured cellular solids in single-crystal silicon.  ...  Nanoelectromechanical systems (NEMS) containing cellular materials are used to demonstrate stretching, bending and brittle fracture.  ...  beam, which yield E 0 */E 45 = 2(w/L) 3 and ν 0 * = 1 [7] .  ... 
doi:10.1088/1361-6439/aa7167 fatcat:jv7dv3d7snctbi3kztlwhtypbi

Layout decomposition co-optimization for hybrid e-beam and multiple patterning lithography

Yunfeng Yang, Wai-Shing Luk, Hai Zhou, Changhao Yan, Xuan Zeng, Dian Zhou
2015 The 20th Asia and South Pacific Design Automation Conference  
As the feature size keeps scaling down and the circuit complexity increases rapidly, a more advanced hybrid lithography, which combines multiple patterning and e-beam lithography (EBL), is promising to  ...  In this paper, we formulate the layout decomposition problem for this hybrid lithography as a minimum vertex deletion K-partition problem, where K is the number of masks in multiple patterning.  ...  Yifang Chen from State Key Lab. of ASIC and System in Fudan University for providing the EBL system data and calculating the e-beam exposure time. We would like to thank Prof.  ... 
doi:10.1109/aspdac.2015.7059082 dblp:conf/aspdac/YangLZYZZ15 fatcat:ib2xkhas45gqlb7mxfhulzkvzy

A flexible design platform for Si/SiGe exchange-only qubits with low disorder [article]

Wonill Ha, Sieu D. Ha, Maxwell D. Choi, Yan Tang, Adele E. Schmitz, Mark P. Levendorf, Kangmu Lee, James M. Chappell, Tower S. Adams, Daniel R. Hulbert, Edwin Acuna, Ramsey S. Noah (+5 others)
2021 arXiv   pre-print
Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering.  ...  The process design enables non-trivial layouts as well as flexibility in gate dimensions, material selection, and additional device features such as for rf qubit control.  ...  Second, positive tone e-beam lithography is used to write gaps between gates, and a F-based dry-etch of gaps defines gates, as seen in the top-down SEM image of Fig. 1(b) .  ... 
arXiv:2107.10916v1 fatcat:7b6fqz3lrjdulkpiqpqg72aeqm

A carbon nanofibre scanning probe assembled using an electrothermal microgripper

K Carlson, K N Andersen, V Eichorn, D H Petersen, K Mølhave, I Y Y Bu, K B K Teo, W I Milne, S Fatikow, P Bøggild
2007 Nanotechnology  
Based on manipulation experiments as well as a simple analysis, we show that shear pulling (lateral movement of the gripper) is far more effective than tensile pulling (vertical movement of gripper) for  ...  According to the above model, and assuming a cylindrical shape of the fibre, the bending moment should be maximal both near the gripper and near the base, i.e. there should be equal probability for fracture  ...  The asymmetric layout with one rigid end-effector also facilitates controlled detachment of CNs from their fixed position on the surface, since the rigid side arm provides a stable base against which the  ... 
doi:10.1088/0957-4484/18/34/345501 fatcat:lbqwzvq6nrafvbeb7akalutar4

Auxiliary pattern-based optical proximity correction for better printability, timing, and leakage control

Swamy Muddu
2008 Journal of Micro/Nanolithography  
We apply a mathematical-programming-based slack budgeting algorithm to determine OPC level for all polysilicon gate geometries.  ...  This flow is implemented with model-based OPC explicitly driven by timing constraints.  ...  volume. 5 Mask writers are hence slowed by the software for e-beam data fracturing and transfer, as well as by the extremely large file sizes involved.  ... 
doi:10.1117/1.2898504 fatcat:syecmgunvvcvzpwqf3n7u7lsyi

Performance-driven optical proximity correction for mask cost reduction

Andrew B. Kahng
2007 Journal of Micro/Nanolithography  
We apply a mathematical-programming-based slack budgeting algorithm to determine OPC level for all polysilicon gate geometries.  ...  This flow is implemented with model-based OPC explicitly driven by timing constraints.  ...  volume. 5 Mask writers are hence slowed by the software for e-beam data fracturing and transfer, as well as by the extremely large file sizes involved.  ... 
doi:10.1117/1.2774994 fatcat:eqfbxmtrh5arhas7u4h3btdzm4
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