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Inductor design of 20-V boost converter for low power 3D solid state drive with NAND flash memories
2009
Proceedings of the 14th ACM/IEEE international symposium on Low power electronics and design - ISLPED '09
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A 3D-integrated Solid State Drive (SSD) with the boost converter can achieve both the low power and the fast write-operation at the small die area of the NAND flash memory. ...
Therefore, this paper proposes a spiral inductor design of the boost converter for the 3D SSD. ...
Iwasaki and Toshiba NAND team for their support and chip fabrication. ...
doi:10.1145/1594233.1594253
dblp:conf/islped/YasufukuIMNTST09
fatcat:mu22chzu3jghroyfemap56zyeq
Inductor and TSV Design of 20-V Boost Converter for Low Power 3D Solid State Drive with NAND Flash Memories
2010
IEICE transactions on electronics
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Two essential technologies for a 3D Solid State Drive (3D-SSD) with a boost converter are presented in this paper. ...
In the design of the inductor, the on-board inductor from 250 nH to 320 nH is the best design feature that meets all requirements, including high output voltage above 20 V, fast rise time, low energy consumption ...
Iwasaki and the Toshiba NAND team for their support and for chip fabrication. ...
doi:10.1587/transele.e93.c.317
fatcat:5nmeraju2vgo5jql4qabu4nsyu
1.8 V Low-Transient-Energy Adaptive Program-Voltage Generator Based on Boost Converter for 3D-Integrated NAND Flash SSD
2011
IEEE Journal of Solid-State Circuits
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In this paper we present an adaptive program-voltage generator for 3D-integrated solid state drives (SSDs) based on a boost converter. ...
Index Terms-Solid state drive, NAND flash memory, program-voltage generator, boost converter, charge pump, high-voltage MOS, adaptive controller. ...
Iwasaki, and the Toshiba NAND team for their support and chip fabrication. ...
doi:10.1109/jssc.2011.2131810
fatcat:72hhiiifcncnji7r7v2rea7y6i
Highly reliable, high speed and low power NAND flash memory-based Solid State Drives (SSDs)
2012
IEICE Electronics Express
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This paper provides a comprehensive review on various state-of-theart memory system architectures and related memory circuits for the highly reliable, high speed and low power NAND flash memory based SSDs ...
A 56 nm CMOS 99 mm 2 8 Gb Multi-level NAND Flash Memory with 10 MB/s Program Throughput," Int. ...
NAND flash memory and Solid-State Drive (SSD) Fig. 2 shows the NAND flash memory cell and the chip architecture. ...
doi:10.1587/elex.9.779
fatcat:outxssmwz5fsdfijxe5tm4ehci
2019 Index IEEE Journal of Solid-State Circuits Vol. 54
2019
IEEE Journal of Solid-State Circuits
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., +, JSSC Oct. 2019 2786-2801 Flash memories 3-D NAND Flash Value-Aware SSD: Error-Tolerant SSD Without ECCs for Image Recognition. ...
., +, JSSC April 2019
1185-1195
IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 54, NO. 12, DECEMBER 2019
+ Check author entry for coauthors
A 4-GHz Low-Power, Multi-User Approximate Zero-IF FM-UWB Trans ...
doi:10.1109/jssc.2019.2956675
fatcat:laiuae7dtragjijttgfatsldmu
2019 Index IEEE Transactions on Circuits and Systems I: Regular Papers Vol. 66
2019
IEEE Transactions on Circuits and Systems Part 1: Regular Papers
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., +, TCSI June 2019 2322-2335
Flash memories
A (21150, 19050) GC-LDPC Decoder for NAND Flash Applications. ...
., +, TCSI Dec. 2019 4740-4752 Novel Data Pre-Distorter for APSK Signals in Solid-State Power Amplifiers. ...
Analysis of SRAM Enhancements Through Sense Amplifier ...
doi:10.1109/tcsi.2020.2966967
fatcat:f663jj5g45e3peggn3gwn5jys4
2021 Index IEEE Journal of Solid-State Circuits Vol. 56
2021
IEEE Journal of Solid-State Circuits
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The Author Index contains the primary entry for each item, listed under the first author's name. ...
The primary entry includes the coauthors' names, the title of the paper or other item, and its location, specified by the publication abbreviation, year, month, and inclusive pagination. ...
Kim, J., +, JSSC April 2021 1093-1104 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 56, NO. 12, DECEMBER 2021 IntAct: A 96-Core Processor With Six Chiplets 3D-Stacked on an Active Interposer With Distributed ...
doi:10.1109/jssc.2021.3137574
fatcat:nfo3y7i5kncsng36fvi5g5hdre
A 2.9-to-4.0GHz fractional-N digital PLL with bang-bang phase detector and 560fsrms integrated jitter at 4.5mW power
2011
2011 IEEE International Solid-State Circuits Conference
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) • Samsung Electronics
DC-DC Converters
A 128Gb 1b/Cell 96-Word-Line-Layer 3D Flash Memory to Improve Random Read Latency with t PROG =75μs and t R =4μs
A 510nW 0.41V Low-Memory Low-Computation ...
Jeong Samsung Electronics, Hwaseong, Korea 10:45 AM 13.2 A 1Tb 4b/Cell 96-Stacked-WL 3D NAND Flash Memory with 30MB/s Program Throughput Using Peripheral Circuit Under Memory Cell Array Technique H. ...
New architectures for power conversion will be discussed, based on hybrid-resonant switched capacitor topologies as well as high conversion-ratio multiphase converters for performance computing. ...
doi:10.1109/isscc.2011.5746231
dblp:conf/isscc/TascaZMLSL11
fatcat:njwtoeazbrbttbtyrcb23fvbpa
2020 Index IEEE Electron Device Letters Vol. 41
2020
IEEE Electron Device Letters
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., Performance Enhanced Thermopile With Rough Dielectric Film Black; LED April 2020 593-596 He, Z., see Gao, R., LED Jan. 2020 38-41 He, Z., see 1424-1427 He, Z., see Dev, D., LED June 2020 936-939 ...
., +, LED Jan. 2020 30-33 Optimization of Performance and Reliability in 3D NAND Flash Memory. ...
., +, LED Aug. 2020 1189-1192 Investigation of Program Noise in Charge Trap Based 3D NAND Flash Memory. ...
doi:10.1109/led.2021.3052397
fatcat:3hcysdtecve2zhapvka44rw7z4
Roadmap on emerging hardware and technology for machine learning
2020
Nanotechnology
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The aim of this Roadmap is to present a snapshot of emerging hardware technologies that are potentially beneficial for machine learning, providing the Nanotechnology readers with a perspective of challenges ...
A hardware platform based on emerging devices and new architecture is the hope for future computing with dramatically improved throughput and energy efficiency. ...
Can Li for their help in preparing this section of roadmap. ...
doi:10.1088/1361-6528/aba70f
pmid:32679577
fatcat:t6me4pfxgfhdvbdqjnyjuksf2e
Applications of Phase Change Materials in Electrical Regime from Conventional Storage Memory to Novel Neuromorphic Computing
2020
IEEE Access
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The physical principles of various emerging electrical devices using phase-change materials are subsequently overviewed in association with their state-of-the-art progress. ...
market such as phase-change random access memory and phase-change probe memory. ...
is to lower the cost and to replace with NAND Flash [119] . ...
doi:10.1109/access.2020.2990536
fatcat:drax2ut2fjcjnakm23ogtslidu
Memory leads the way to better computing
2015
Nature Nanotechnology
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The goal of the study was to assay the state of the art, and not to either propose a potential system or prepare and propose a detailed roadmap for its development. ...
I am honored to have been part of this study, and wish to thank the study members for their passion for the subject, and for contributing far more of their precious time than they expected. Peter M. ...
NAND Flash memory is not capable of infinite read-write cycles (termed endurance). Most Single-Level-Cell (SLC) NAND is rated for 100K cycles with ECC. ...
doi:10.1038/nnano.2015.29
pmid:25740127
fatcat:d6iiuuwcozbxlgn4kxxzdzwd4m
2021 Index IEEE Electron Device Letters Vol. 42
2021
IEEE Electron Device Letters
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The Author Index contains the primary entry for each item, listed under the first author's name. ...
The primary entry includes the coauthors' names, the title of the paper or other item, and its location, specified by the publication abbreviation, year, month, and inclusive pagination. ...
., +, LED July 2021 1049-1052 Flash memories Analysis and Optimization of Temporary Read Errors in 3D NAND Flash Memories. ...
doi:10.1109/led.2021.3138207
fatcat:sk27mnb5kjgzxafcapixpt45ba
Future trends in microelectronics - reflections on the road to nanotechnology
1997
Precision engineering
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Send comment regarding this burden estimates or any other aspect of this collection of information, including suggestions for reducing this burden, to Washington Headquarters Services, Directorate for ...
Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining ...
We consider such grating structures particularly promising for future applications, and extensive studies of such structures are currently underway, to be reported in due course. ...
doi:10.1016/0141-6359(97)90048-9
fatcat:j7blw4wn6zbitmoqqffj46g54e
Radiation Tolerant Electronics
2019
Electronics
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Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits ...
Thus, they thank the related chip research and development institutes in China for the support of information in DUT design. ...
The funders had no role in the design of the study; in the collection, analyses, or interpretation of data; in the writing of the manuscript, or in the decision to publish the results. ...
doi:10.3390/electronics8070730
fatcat:wjo5prr5xjeqtlhxlj4kqz5st4
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