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Inductor and TSV Design of 20-V Boost Converter for Low Power 3D Solid State Drive with NAND Flash Memories

Tadashi YASUFUKU, Koichi ISHIDA, Shinji MIYAMOTO, Hiroto NAKAI, Makoto TAKAMIYA, Takayasu SAKURAI, Ken TAKEUCHI
2010 IEICE transactions on electronics  
Two essential technologies for a 3D Solid State Drive (3D-SSD) with a boost converter are presented in this paper.  ...  In the design of the inductor, the on-board inductor from 250 nH to 320 nH is the best design feature that meets all requirements, including high output voltage above 20 V, fast rise time, low energy consumption  ...  Futatsuyama and G. Iwasaki and the Toshiba NAND team for their support and for chip fabrication.  ... 
doi:10.1587/transele.e93.c.317 fatcat:5nmeraju2vgo5jql4qabu4nsyu

Roadmap on emerging hardware and technology for machine learning

Qiangfei Xia, Karl K Berggren, Konstantin Likharev, Dmitri B Strukov, Hao Jiang, Thomas Mikolajick, Damien Querlioz, Martin Salinga, John Erickson, Shuang Pi, Feng Xiong, Peng Lin (+31 others)
2020 Nanotechnology  
A hardware platform based on emerging devices and new architecture is the hope for future computing with dramatically improved throughput and energy efficiency.  ...  Data-centric computing requires a revolution in hardware systems, since traditional digital computers based on transistors and the von Neumann architecture were not purposely designed for neuromorphic  ...  Acknowledgements AM acknowledges support from the Cooperative Research Agreement between the University of Maryland and the National Institute of Standards and Technology Center for Nanoscale Science and  ... 
doi:10.1088/1361-6528/aba70f pmid:32679577 fatcat:t6me4pfxgfhdvbdqjnyjuksf2e

Memory leads the way to better computing

H.-S. Philip Wong, Sayeef Salahuddin
2015 Nature Nanotechnology  
The goal of the study was to assay the state of the art, and not to either propose a potential system or prepare and propose a detailed roadmap for its development.  ...  I am honored to have been part of this study, and wish to thank the study members for their passion for the subject, and for contributing far more of their precious time than they expected. Peter M.  ...  NAND Flash memory is not capable of infinite read-write cycles (termed endurance). Most Single-Level-Cell (SLC) NAND is rated for 100K cycles with ECC.  ... 
doi:10.1038/nnano.2015.29 pmid:25740127 fatcat:d6iiuuwcozbxlgn4kxxzdzwd4m

Ultra-thin and flexible CMOS technology: ISFET-based microsystem for biomedical applications

Anastasios Vilouras
2021
(3D-ICs).  ...  Very thin integrated circuits (ICs) with through-silicon vias (TSVs) will allow the stacking and interconnection of multiple dies in a compact format allowing a migration towards three-dimensional ICs  ...  ], where the fabricated Si-based flexible NAND flash memory showed adequate performance in terms of ⁄ ratio (>10 2 at ), long retention (>10 4 seconds) and reproducible endurance (>10 3 switching  ... 
doi:10.5525/gla.thesis.82122 fatcat:7pvyx4jpbvgodpka3hfmh5aklq