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Characterization and evaluation of 600 V range devices for active power factor correction in boundary and continuous conduction modes
2015
2015 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Traditional characterization of semiconductors switching dynamics is performed based on clamped inductive load measurements using the double pulse tester (DPT) configuration. ...
This approach is valid for converters operating in continuous conduction mode (CCM), however in boundary conduction mode (BCM), if valley switching detection is used, the amount of energy recovered from ...
The characterization is performed at a rail voltage 400 .The amount of energy corresponding to the switching node and the oscilloscope probe (2.55 @ 400 has been removed from the turn on loss measurement ...
doi:10.1109/apec.2015.7104607
fatcat:jpy3apllqfhztd7tsx35fmezjm
AN IMPROVED METHODOLOGY FOR SWITCHING LOSSES ESTIMATION IN SiC MOSFETs
2020
Eletrônica de Potência
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This work presents an improved analytical model concerning the prediction of switching losses in power MOSFETs by considering the influence of parasitic elements in the high-frequency operation of devices ...
The methodology is described in details and verified by means of experimental results concerning a SiC MOSFET, which is tested under various current and voltage conditions. ...
ACKNOWLEDGEMENTS This study was supported in part by the Brazilian funding agencies CAPES, CNPq and FAPEMIG. ...
doi:10.18618/rep.2020.3.0010
fatcat:jmdtntys7bh2rpkruf6dg6ujmu
Analysis and Design of Single-Ended Resonant Converter for Wireless Power Transfer Systems
2022
Sensors
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Finally, the accuracy of the proposed model is verified by simulation and experimental results. ...
circuits, low switching losses, and cost benefits, as they only use a low-side switch with a simple gate driver. ...
Conflicts of Interest: The authors declare no conflict of interest. ...
doi:10.3390/s22155617
fatcat:2jkdywxj5fbvtp3yxfta6nalhm
Methods for the Separation of Failure Modes in Power-Cycling Tests of High-Power Transistor Modules Using Accurate Voltage Monitoring
2020
Energies
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Finally, the method for identification of bond-wire cracking and lift-off using only the measured voltage curves, is shown. ...
The accurate measurement of on-state device voltage during power-cycling tests can deliver important information about the health of the tested power electronics components. ...
The dissipation is generated by the switching losses and the conduction losses. Let us consider the conduction losses first. ...
doi:10.3390/en13112718
fatcat:3zbnrp2hkzakdc35pmduylpoay
Table of Contents – Technical
2021
2021 IEEE International Joint EMC/SI/PI and EMC Europe Symposium
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data measured by extended double pulse test for bare SiC MOSFETs and Si RC-IGBTs.
14:45 A Survey of Modeling and Reduction Techniques of Radiated EMI in Power Electronics ..... 1081
Juntao ...
The level jump, high di/dt and dv/dt of output square-wave voltages or currents caused by the switching
process of active components like IGBT or MOSFET lead to the increase in harmonics near ...
doi:10.1109/emc/si/pi/emceurope52599.2021.9559379
fatcat:bqobkpurjje4vb5xpdk56r4lpi
IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
1987
IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.
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so designated by other documentation. 12a. ...
the data needed, and completing and reviewing the collection of information. ...
ACKNOWLEDGMENTS The SiC research was funded by the Westinghouse Electronic Co. and the Office of Naval Research (BMDO/IST) under contracts N00014 -88 -K -0341. ...
doi:10.1109/cornel.1987.721206
fatcat:kwwfh234a5cx5njrhddhkwhi6e
Copyright Page
[chapter]
2018
The RF and Microwave Handbook - 3 Volume Set
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Reasonable efforts have been made to publish reliable data and information, but the author and the publisher cannot assume responsibility for the validity of all materials or for the consequences of their ...
No part of this book may be reprinted, reproduced, transmitted, or utilized in any form by any electronic, mechanical, or other means, now known or hereafter invented, including photocopying, microfilming ...
The return loss contact repeatability can easily vary by ±5 milliunits and is additive based on the number of switches in series. ...
doi:10.1201/9781315217703-18
fatcat:wmkr4uimdjexjg7wuanbgkolp4
Critical Review of Recent Advancement in Metamaterial Design for Wireless Power Transfer
2022
IEEE Access
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Moreover, the inherently high resonant frequency of existing metamaterial (MM)-based WPT designs imposes a high switching stress on power semiconductors and passive components, resulting in high power ...
This manuscript presents a critical survey of recent studies and developments in MM-based WPT systems. ...
semiconductors given that high frequency increases the turn ON and turn OFF time of power MOSFET, leading to high power dissipation and switching losses. ...
doi:10.1109/access.2022.3167443
fatcat:zhpk25v6cbhhzpndyrmddyqokm
Computational Electronics
2006
Synthesis Lectures on Computational Electromagnetics
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Computational Electronics is devoted to state of the art numerical techniques and physical models used in the simulation of semiconductor devices from a semi-classical perspective. ...
The motivation for this volume is the need within the modeling and simulation community for a comprehensive text which spans basic drift-diffusion modeling, through energy balance and hydrodynamic models ...
This causes gradual loss of gain of the transistor. ...
doi:10.2200/s00026ed1v01y200605cem006
fatcat:fyti5u2gizbyxjnpgsadhph7uq
Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
2015
Nanoscale
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This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. ...
We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting ...
a model periodic potential (see Fig. 20 ) 282 and experimentally by optical, transport and scanning probe methods. ...
doi:10.1039/c4nr01600a
pmid:25707682
fatcat:hzfkhollfbbunbdroujkvqzxke
Improved power loss estimation for device- to system-level analysis
2019
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The proposed model is validated experimentally and provides a four-fold increase in loss predication accuracy compared to traditional methods. ...
Existing system-level analysis focuses on distribution losses and oversimplifies converter losses by assuming fixed efficiency. ...
Power Loss Characterization of Gallium Nitride Power Switches GaN power switches provide multiple benefits over traditional Si MOSFETS, such as lower losses, higher switching frequencies and increased ...
doi:10.14288/1.0380259
fatcat:vmzkg5zzbrgx7l4s4vmvd6smry
2021 Index IEEE Transactions on Instrumentation and Measurement Vol. 70
2021
IEEE Transactions on Instrumentation and Measurement
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The primary entry includes the coauthors' names, the title of the paper or other item, and its location, specified by the publication abbreviation, year, and article number. ...
Article numbers are based on specified topic areas and corresponding codes associated with the publication. ...
, see Yang, W., TIM 2021 2512910 Zeng, X., see Han, L., TIM 2021 5502712 Zeng, Z., Wang, J., Wang, L., Yu, Y., and Ou, K., Inaccurate Switching Loss Measurement of SiC MOSFET Caused by Probes: Modelization ...
doi:10.1109/tim.2022.3156705
fatcat:dmqderzenrcopoyipv3v4vh4ry
Future trends in microelectronics - reflections on the road to nanotechnology
1997
Precision engineering
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the data needed, and completing and reviewing the collection of information. ...
information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office of Management and Budget, Paperwork Reduction Project (0704-0188), Washington, ...
Acknowledgement This work was supported by the Office of Naval Research (N00014-89-J-1470, N00014-92-J-1519 KH) and by the Army Research Office (DAAL03-92-G-0271). ...
doi:10.1016/0141-6359(97)90048-9
fatcat:j7blw4wn6zbitmoqqffj46g54e
The Juno Magnetic Field Investigation
2017
Space Science Reviews
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The Juno Magnetic Field investigation (MAG) characterizes Jupiter's planetary magnetic field and magnetosphere, providing the first globally distributed and proximate measurements of the magnetic field ...
The imaging system sensors are part of a subsystem that provides accurate attitude information (to ∼20 arcsec on a spinning spacecraft) near the point of measurement of the magnetic field. ...
A more detailed characterization of Jupiter's magnetic field awaited direct measurement by passing space probes, beginning with Pioneers 10 and 11 the early 1970s (Smith et al. 1974 (Smith et al. , 1975a ...
doi:10.1007/s11214-017-0334-z
fatcat:fukiytczmjfhhna3k4clvcdo3e
Hard and Soft Switching Losses in Power Converters: Role of Transistor Output Capacitance
2022
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and creation of solutions that make everyday life easier. ...
Since the industrial revolution, a myriad of machines were invented, commercialized, and then used to do one task, which can be put under the following umbrella ideology: the betterment of human society ...
Such modelling is used in the recent work by Guacci et al. to experimentally characterize hard-switching losses in 200-V Si and GaN devices [92] . ...
doi:10.5075/epfl-thesis-9042
fatcat:lzkjfglwwnhuxopbebw2jiu264
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