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A two-dimensional numerical simulation of oxide charge buildup in MOS transistors due to radiation

V. Vasudevan, J. Vasi
1994 IEEE Transactions on Electron Devices  
Technology, Madras 600036, India. Technology, Bombay, Bombay, 400076, India. J.  ...  In the oxide, 4 tax v 2 $ = --( p + p t -n -n t ) Manuscript received September 22, 1993 v2$= --( D + p -n ) 9 tsi d n 1 at 4 -= -v .Jn.  ... 
doi:10.1109/16.275224 fatcat:s6ktz3xuvjhg5pcqgkso32q3je

Seventeenth General Assembly and International Congress of Crystallography, Seattle, Washington, USA, 8–17 August 1996

1997 Acta Crystallographica Section A Foundations of Crystallography  
In December 1993, Professor W. T. Robinson and Professor S. R. Hall were IUCr Visiting Professors in various Asian universities (Kuala Lumpur, Mysore, Tiruchiapalli, Bombay etc.). Professor N.  ...  Thyagarajan (India), Scientific Secretary.  ... 
doi:10.1107/s0108767397099819 fatcat:lmoo54ctmjdhdivog5szyomyci