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Temperature impact on reliability of power RF devices under S-band pulsed-RF test
2020
SN Applied Sciences
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This paper presents an innovative reliability bench of aging life tests designed to high power RF applications for device lifetime under pulse conditions. ...
The temperature effect on the parameters of power RF LDMOS (Radio Frequency Laterally Diffused-Metal-Oxide-Semiconductor) devices is highlighted. ...
Ahmed Almussalam (Umm Al-Qura University) for its helpful discussions, valuable advices, and rich contribution to this paper. ...
doi:10.1007/s42452-020-2708-1
fatcat:fs3w6rba2fhqlkh5nd7ewd2wmm
Design of a Novel W-Sinker RF LDMOS
2015
Advances in Condensed Matter Physics
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The qualification results show that the device reliability and ruggedness can also meet requirement of the application. ...
Combined with the adoption of the techniques, like grounded shield, step gate oxide, LDD optimization, and so forth, an advanced technology for RF LDMOS based on conventional 0.35 μm CMOS technology is ...
The authors would also like to give great thanks to Dajie Zeng and Nan Liu from Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, for supporting RF measurement and ruggedness ...
doi:10.1155/2015/312646
fatcat:ozf7lo2t2baltisgdliagrm5g4
The GAN Era has Arrived in SATCOM Power Amplifiers
2015
Journal of Siberian Federal University Engineering & Technologies
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Therefore, GaN transistors and power amplifiers, they are particularly relevant for applications in space exploration. ...
This greatly reduces the problem of heat removal. These transistors operate at voltages up to 100 V against the maximum of 20 V for GaAs transistors at equivalent power output. ...
Introduction Gallium Nitride High Electron Mobility Transistors, GaNHEMTs, are fast becoming the amplifier designer's device of choice for applications ranging from pulsed radar to communication systems ...
doi:10.17516/1999-494x-2015-8-3-297-303
fatcat:cxejocd3zra3tedsccie252owa
2005 IMS MTT-S - Exhibition guide
2005
IEEE MTT-S International Microwave Symposium Digest, 2005.
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Matzen A-Alpha Waveguide, a manufacturer of precision cold drawn aluminum waveguide tubing, specializes in making thin wall tubing for aerospace applications. ...
The following are product and service descriptions received from exhibitors who responded to a call for information. ...
reliability RF/microwave semiconductors and modules, as well is InGaP HBT power amplifiers for IEEE 802.11 a/b/g/n wireless LAN applications. ...
doi:10.1109/mwsym.2005.1516499
fatcat:qggebn5ckfbxtczxg7cuyh4rua
RF MOSFET: recent advances, current status and future trends
2003
Solid-State Electronics
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of metal-oxide semiconductor field-effect transistors (MOSFETs) for RF/microwave applications. ...
This paper covers the recent advances and current status of mainstream CMOS as the dominating technology in very large scale integration, future trends of RF MOSFETs, and applications of MOSFETs in RF ...
Certain radar and sensor applications will operate around 94 GHz. ...
doi:10.1016/s0038-1101(03)00225-9
fatcat:f6lj6qpoqvarraxk244ijt6mwe
Copyright Page
[chapter]
2018
The RF and Microwave Handbook - 3 Volume Set
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Reasonable efforts have been made to publish reliable data and information, but the author and the publisher cannot assume responsibility for the validity of all materials or for the consequences of their ...
A wide variety of references are listed. ...
While the IEEE standard for radar bands [8] expressly deprecates the use of radar band designations for nonradar applications, the convenience of the band designations as technical shorthand has led ...
doi:10.1201/9781315217703-18
fatcat:wmkr4uimdjexjg7wuanbgkolp4
Understanding Smart Sensors
2000
Measurement science and technology
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See Table 8 .1 for a variety of applications and their frequencies. The 1.8-to 2.4-GHz band is open for data collection in Europe, which at present is the second largest market for RF data. ...
12
Slowest
1
Digital
decimation
filter
16
100 kHz
(16 bits)
6.4 MHz
(1 bit)
First-order -loop
Σ ∆
1-bit
D/A
x(t)
y(t)
y(n)
F :f
s s
(x)n
F s
1
Σ
∆
Table 5 . 5 ...
others baseband frequency band occupied by information-bearing signals before combining with a carrier in the modulation process baud unit of signaling speed equal to the number of discrete signal conditions ...
doi:10.1088/0957-0233/11/12/711
fatcat:inet5t3lzbecrczd2f5tdevkzq
Performance comparison of gallium nitride (GaN) in DC-DC converter circuit
2022
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Which is very important for solar power system. Transistor plays a vital role in any converter circuit because the overall efficiency of a circuit depends on the switching losses. ...
Solar power system is a free sources of sustainable power unlike fossil fuels, and inexhaustible. Converters can shift the level of voltage from one to another through switches. ...
In terms of the reliability issues of LDMOS, special consideration must be given to the hot carrier degradation, where electrons and holes are trapped in the hot surface oxide due to the high electric ...
doi:10.25949/19431296
fatcat:xbyqh3mdp5hw5bn37l5rgatbie
Nonlinear Characterization and Modelling of GaN HEMTs for Microwave Power Amplifier Applications
2013
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Semiconductors technologies are rapidly evolving driven by the need for higher performance demanded by applications. ...
applications. ...
Today GaN HEMTs are a very promising candidate for high power and efficiency microwave applications from L band of cellular base stations up to K band for satellite communications and radars but the research ...
doi:10.6092/unibo/amsdottorato/5774
fatcat:fvcdlrih2rdrjblvcp56znmaby
Program
2021
2021 IEEE International Conference on Consumer Electronics-Taiwan (ICCE-TW)
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for radar applications
in this work. ...
Pingtung University, Taiwan)
10:50 A Uniplanar Multi-Band S-shape Antenna for Smart Phone Applications
Jia-Sheng Xu and Hsin-lung Su (National Pingtung University, Taiwan)
This ...
doi:10.1109/icce-tw52618.2021.9602919
fatcat:aetmvxb7hfah7iuucbamos2wgu
Program
2022
2021 18th European Radar Conference (EuRAD)
unpublished
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20 -WWW.EUMW2021.COM *The above rates are based on single occupancy, during the main days of the event and the standard room type of the hotel. ...
Examples of such signals include multi-carrier concurrent signals, both closely and widely spaced, and band-limited noise-like signals, typical of 5G and other multi-carrier aggregated signal applications ...
We will also discuss the challenges faced by reliability engineers when assessing the reliability of 5G-6G/mmWave/RF applications. ...
doi:10.23919/eurad50154.2022.9784469
fatcat:q3rzxitzizdofkix56mru2zfka
Conference Programme
2022
2021 51st European Microwave Conference (EuMC)
unpublished
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20 -WWW.EUMW2021.COM *The above rates are based on single occupancy, during the main days of the event and the standard room type of the hotel. ...
Examples of such signals include multi-carrier concurrent signals, both closely and widely spaced, and band-limited noise-like signals, typical of 5G and other multi-carrier aggregated signal applications ...
We will also discuss the challenges faced by reliability engineers when assessing the reliability of 5G-6G/mmWave/RF applications. ...
doi:10.23919/eumc50147.2022.9784241
fatcat:nznhi6wotvfmbfuztygpr7papm
A design methodology for 2D sparse NDE arrays using an efficient implementation of refracted-ray TFM
2013
2013 IEEE International Ultrasonics Symposium (IUS)
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Recent advances in the field of tissue engineering include the engineering of skin, cartilage, and bladder, all of which are relatively thin tissues that can rely on diffusion for the delivery of oxygen ...
By changing the initial density of the cell bands during hydrogel formation, the technology can produce vascular networks having two distinct morphologiesone that resembles peripheral vascular networks ...
The authors acknowledge the ANR and DGA for their support under the project Metactif, grant ANR-11-ASTR-015. ...
doi:10.1109/ultsym.2013.0035
fatcat:th5znfh7y5bklfdbmhb4u6iq2i
Compact modeling of high voltage MOSFETs
2007
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However, existing LDMOS models are not accurate enough for this task and SPICE models are specially weak for AC performance. ...
Third, the invalidity of Ward-Dutton charge partitioning scheme for lateral non-uniformly doped MOSFET is explained. ...
Adrian Mihai Ionescu for the support, confidence Acknowledgements Abstract ...
doi:10.5075/epfl-thesis-3915
fatcat:2pkfq4iuybgl5pmjj4q2vuxj2a
Application of adaptive multilevel substructuring technique to model CMOS micromachined thermistor gas sensor, part (I): A feasibility study
Proceedings International Conference on MEMS, NANO and Smart Systems
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of Virginia, Charlottesville , United States
WEPE-9: A Micro-Machined
Contacting Sliding Short for High
Frequency Applications
J. R. Stanec, N. S. ...
Bakr 2 , N. Sangary 3 , S. ...
The technical development of high reliability RF-MEMS switches for microwave applications will be discussed in detail, from several developing companies in the US and Europe. ...
doi:10.1109/icmens.2003.1222009
dblp:conf/icmens/SadekM03
fatcat:ovvm4vv6vbgalks7ad26xjo3yq
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