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Use of FRAM Memories in Spacecrafts [chapter]

Claudio Sansoe, Maurizio Tranchero
2011 Ferroelectrics - Applications  
Reuse also allows to put an increased design effort to compensate for the lower reliability of COTS devices, therefore achieving a reasonable system reliability at a reduced cost.  ...  Being highly experimental and having only a few documentation on their behavior, FeRAM was only used to hold non-vital data, such as the telemetry stream acquired from sensors.  ...  How to reference In order to correctly reference this scholarly work, feel free to copy and paste the following: Claudio Sansoè and Maurizio Tranchero (2011).  ... 
doi:10.5772/18529 fatcat:kw37d4fnajablamqt6xgfmtyxe

Trends on the application of emerging nonvolatile memory to processors and programmable devices

Lionel Torres, Raphael Martins Brum, Luis Vitorio Cargnini, Gilles Sassatelli
2013 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013)  
M.; Guillemenet, Y.; Sassatelli, G., "Embedded MRAM for high-speed computing," VLSI and System-on-Chip (VLSI-SoC), 2011 IEEE/I-  ...  of hybrid MRAM/CMOS cells for reconfigurable computing," New Circuits and Systems Zhao, W.S.; Zhang, Y.; Lakys, Y.; Klein, J-O; Etiemble, D.; Revelosona, D.; Chappert, C.; Torres, L.; Cargnini, L.V.;  ...  In the same chain, it would affect the metal tracks for routing, affecting capacitance and resistance.  ... 
doi:10.1109/iscas.2013.6571792 dblp:conf/iscas/TorresBCS13 fatcat:aommoaizybhufp76nxuappbxby

Phase change memory technology

Geoffrey W. Burr, Matthew J. Breitwisch, Michele Franceschini, Davide Garetto, Kailash Gopalakrishnan, Bryan Jackson, Bülent Kurdi, Chung Lam, Luis A. Lastras, Alvaro Padilla, Bipin Rajendran, Simone Raoux (+1 others)
2010 Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics  
We then address challenges for the technology, including the design of PCM cells for low RESET current, the need to control device-to-device variability, and undesirable changes in the phase change material  ...  We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive  ...  ACKNOWLEDGEMENTS There are many people who have helped the authors prepare for this paper.  ... 
doi:10.1116/1.3301579 fatcat:axaan4wdbbhf3a6ii4wrppriba

Memory leads the way to better computing

H.-S. Philip Wong, Sayeef Salahuddin
2015 Nature Nanotechnology  
I am honored to have been part of this study, and wish to thank the study members for their passion for the subject, and for contributing far more of their precious time than they expected. Peter M.  ...  i This page intentionally left blank. ii FOREWORD This document reflects the thoughts of a group of highly talented individuals from universities, industry, and research labs on what might be the challenges  ...  Of these, FeRAM and MRAM devices are currently the most mature, with 1-4 Mb chips available for niche applications now, but expansion into large-scale computing environments has been hampered by poor device  ... 
doi:10.1038/nnano.2015.29 pmid:25740127 fatcat:d6iiuuwcozbxlgn4kxxzdzwd4m

Applications of memristors in conventional analogue electronics

Radu Berdan, Christos Papavassiliou, Chris Toumazou, Engineering And Physical Sciences Research Council
A specialised memristor characterisation instrument is designed and built to mitigate this issue and to allow access to large numbers of devices at a time.  ...  This platform allows for a wide range of different pulsing algorithms to be applied on individual devices, or on crossbars of memristive elements, and is used throughout this dissertation.  ...  read amps and respective reading amplifier chains; • Word-and bitline access multiplexer banks; • PLCC68 DIP slots for interfacing with packaged devices and header pins for interfacing with memristive  ... 
doi:10.25560/43370 fatcat:yr5ss54agrbyvimeosx6h3wdae