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A self-assembled microbonded germanium/silicon heterojunction photodiode for 25 Gb/s high-speed optical interconnects

Chih-Kuo Tseng, Wei-Ting Chen, Ku-Hung Chen, Han-Din Liu, Yimin Kang, Neil Na, Ming-Chang M. Lee
2013 Scientific Reports  
A novel technique using surface tension to locally bond germanium (Ge) on silicon (Si) is presented for fabricating high performance Ge/Si photodiodes.  ...  Surface tension is a cohesive force among liquid molecules that tends to bring contiguous objects in contact to maintain a minimum surface energy.  ...  Acknowledgments The authors would like to thanks Prof. S. Hsu from National Tsing Hua University for the assistance of high-frequency measurement.  ... 
doi:10.1038/srep03225 pmid:24232956 pmcid:PMC3828570 fatcat:kvmmkirjb5exvfbyrrqyciv7l4

42 GHz pin Germanium photodetector integrated in a silicon-on-insulator waveguide

Laurent Vivien, Johann Osmond, Jean-Marc Fédéli, Delphine Marris-Morini, Paul Crozat, Jean-François Damlencourt, Eric Cassan, Y. Lecunff, Suzanne Laval
2009 Optics Express  
A -3 dB bandwidth of 42 GHz has been measured at a 4V reverse bias with a responsivity as high as 1 A/W at the wavelength of 1.55 µm and a low dark current density of 60 mA/cm².  ...  The process is fully compatible with CMOS technology.  ...  Acknowledgments The research leading to these results has received funding from the French RMNT program "CAURICO" (Ultra-high speed optoelectronic devices for optical interconnects) and from the European  ... 
doi:10.1364/oe.17.006252 pmid:19365450 fatcat:sdjdizefkrhv5pi4ebkvpihcxi

(DS&T Thomas D. Callinan Award Presentation) Role of Hydrogen in Dielectrics for Electronics and Optoelectronics Devices

D. Misra
2013 ECS Transactions  
In addition, the impact of hydrogen in high-k gate dielectrics on silicon and germanium substrates is also discussed.  ...  Redistribution subject to ECS terms of use (see 207.241.231.82 Downloaded on 2018-07-19 to IP  ...  Acknowledgement The author would like to acknowledge the contribution of his graduate students over the years to carry out research in this field.  ... 
doi:10.1149/05304.0033ecst fatcat:6uzoq6sj65e7tknpejjx4pyhaq

Silicon–germanium receivers for short-wave-infrared optoelectronics and communications

Daniel Benedikovic, Léopold Virot, Guy Aubin, Jean-Michel Hartmann, Farah Amar, Xavier Le Roux, Carlos Alonso-Ramos, Éric Cassan, Delphine Marris-Morini, Jean-Marc Fédéli, Frédéric Boeuf, Bertrand Szelag (+1 others)
2020 Nanophotonics  
Along with recent advances in silicongermanium-based lasers and modulators, short-wave-infrared receivers are also key photonic chip elements to tackle cost, speed and energy consumption challenges of  ...  Germanium and its alloys are thus the most suitable candidates for active functions, i.e. bringing them to close to the silicon family of nanophotonic devices.  ...  However, MSM devices consistently exhibit very high dark currents due to the low Schottky barrier on Ge.  ... 
doi:10.1515/nanoph-2020-0547 fatcat:j7chm677uvffhbqpk7vpff3hba

Study of GeSn Mid-infrared Photodetectors for High Frequency Applications

Huong Tran, Callum G. Littlejohns, David J. Thomson, Thach Pham, Amir Ghetmiri, Aboozar Mosleh, Joe Margetis, John Tolle, Goran Z. Mashanovich, Wei Du, Baohua Li, Mansour Mortazavi (+1 others)
2019 Frontiers in Materials  
In 2016, Thach et al. reported figures of merit of the GeSn photodiodes with large mesa sizes of 500 and 250 µm to show the potential of the GeSn materials in short-wave infrared photonics 23 .  ...  The photodiodes' bandwidth is 1.78 GHz, and the simulation shows excellent agreement with measurement results.  ...  Recently, Silicon-germanium-tin (SiGeSn) and Germaniumtin (GeSn) techniques have drawn much attention due to the success of developing all-group-IV alloy with outstanding material properties including  ... 
doi:10.3389/fmats.2019.00278 fatcat:e6msdssbdvgf3hz46oissbnkb4

2020 Index IEEE Transactions on Electron Devices Vol. 67

2020 IEEE Transactions on Electron Devices  
, Vega, R.A., Hook, T.B., and Dixit, A., Impact of Hot-Carrier Degradation on Drain-Induced Barrier Lowering in Multifin SOI n-Channel FinFETs With Self-Heating; TED May 2020 2208-2212 Gupta, M., see Kumar  ...  , T., Hayakawa, S., Murata, T., Masuda, T., Oda, T., and Takayanagi, Y., Diode-Less SiC Power Module With Countermeasures Against Bipolar Degradation to Achieve Ultrahigh Power Density; TED May 2020  ...  Remesh, N., +, TED June 2020 2311-2317 Passivation of n-and p-Type Silicon Surfaces With Spray-Coated Sol-Gel Silicon Oxide Thin Film.  ... 
doi:10.1109/ted.2021.3054448 fatcat:r4ertn5jordkfjjvorvss7n6ju

Recent advances and future perspectives of single-photon avalanche diodes for quantum photonics applications [article]

Francesco Ceccarelli, Giulia Acconcia, Angelo Gulinatti, Massimo Ghioni, Ivan Rech, Roberto Osellame
2020 arXiv   pre-print
On the one hand, superconducting nanowire single-photon detectors (SNSPDs) are able to provide remarkable performance on a broad spectral range, but their applicability is often limited by the need of  ...  Photonic quantum technologies promise a revolution of the world of information processing, from simulation and computing to communication and sensing, thanks to the many advantages of exploiting single  ...  The solution to this issue is the replacement of junction isolation with a dielectric approach based on deep trenches whose sidewalls are covered with silicon dioxide (in order to isolate the p well of  ... 
arXiv:2010.05613v1 fatcat:2iha2sslfzeivjnfsvr3k326ci

The Emergence of Silicon Photonics as a Flexible Technology Platform

Milan M. Milosevic, Stevan Stankovic, Scott Reynolds, Thalia Dominguez Bucio, Ke Li, David J. Thomson, Frederic Gardes, Graham T. Reed
2018 Proceedings of the IEEE  
| In this paper, we present a brief history of silicon photonics from the early research papers in the late 1980s and early 1990s, to the potentially revolutionary technology that exists today.  ...  The paper encompasses discussion of the key technology areas of passive devices, modulators, detectors, light sources, and system integration.  ...  W A V E G U I D E A N D PA S S I V E C O M P O N E N T S The origins of integrated optics date back to the 1960s and 1970s with the demonstration of the first 2-D waveguides on planar substrates and 3-  ... 
doi:10.1109/jproc.2018.2854372 fatcat:fj7xtb4qqnct5k6nar72q6dsqa

Recent Advances and Future Perspectives of Single‐Photon Avalanche Diodes for Quantum Photonics Applications

Francesco Ceccarelli, Giulia Acconcia, Angelo Gulinatti, Massimo Ghioni, Ivan Rech, Roberto Osellame
2020 Advanced Quantum Technologies  
On the one hand, superconducting nanowire single-photon detectors (SNSPDs) are able to provide remarkable performance on a broad spectral range, but their applicability is often limited by the need of  ...  Photonic quantum technologies promise a revolution of the world of information processing, from simulation and computing to communication and sensing, thanks to the many advantages of exploiting single  ...  The solution to this issue is the replacement of junction isolation with a dielectric approach based on deep trenches whose sidewalls are covered with silicon dioxide (in order to isolate the p well of  ... 
doi:10.1002/qute.202000102 fatcat:y2vxnqqcpvfw3hslhxciytmofa

Recent Advances in Silicon Photodetectors Based on the Internal Photoemission Effect [chapter]

Maurizio Casalino
2017 New Research on Silicon - Structure, Properties, Technology  
In recent years, a lot of passive and active silicon photonic devices have been optimized to work at telecom wavelengths where, unfortunately, silicon has a neglectable optical absorption due to its bandgap  ...  nanostructure are leading this family of device to compare favorably with the well-established technologies commonly used for telecom wavelengths based on germanium and III-V semiconductors.  ...  In addition, a low dark current to the nA range has been obtained thanks to the use of plasmonic structures allowing strong absorption in a small metal layer in contact with silicon.  ... 
doi:10.5772/67720 fatcat:de2ilszd2jdtjpascbvd4szkny

Emerging heterogeneous integrated photonic platforms on silicon

Sasan Fathpour
2015 Nanophotonics  
Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some  ...  These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics  ...  Also, Ge does not have a stable oxide and passivating it to avoid surface recombination -which further increases the dark current -is another challenge.  ... 
doi:10.1515/nanoph-2014-0024 fatcat:ozvzm654lrbhfbh42etxa5cehm

Scaling capacity of fiber-optic transmission systems via silicon photonics

Wei Shi, Ye Tian, Antoine Gervais
2020 Nanophotonics  
Capable of manipulating electrons and photons on the same platform, this disruptive technology promises to cram more complexity on a single chip, leading to orders-of-magnitude reduction of integrated  ...  Firstly, we overview fundamentals and the evolving trends of silicon photonic fabrication process. Then, we focus on recent progress in silicon coherent optical transceivers.  ...  a 90% quantum efficiency), and low dark current (down to the nA level) [83] [84] [85] [86] [87] .  ... 
doi:10.1515/nanoph-2020-0309 fatcat:ynkm6ddswfch3nkkfx3mjk2eje

Optical, electrical, and solar energy-conversion properties of gallium arsenide nanowire-array photoanodes

Shu Hu, Chun-Yung Chi, Katherine T. Fountaine, Maoqing Yao, Harry A. Atwater, P. Daniel Dapkus, Nathan S. Lewis, Chongwu Zhou
2013 Energy & Environmental Science  
Broader context Due to the voltage requirements to produce fuels from sunlight, water, and CO 2 as the inputs, two light-absorbing materials, with band gaps of 1.7 eV and 1.1 eV, respectively, are attractive  ...  Periodic arrays of n-GaAs nanowires have been grown by selective-area metal-organic chemical-vapor deposition on Si and GaAs substrates.  ...  III-V ternary compounds on silicon-germanium (SiGe), but large latticemismatches and polar-nonpolar interfaces between III-V materials and Si(Ge) can lead to deleterious threading dislocations and a high  ... 
doi:10.1039/c3ee40243f fatcat:dilcdmujhfhfdl6nk4hh6rm4oq

First Operation of AlGaN Channel High Electron Mobility Transistors

Takuma Nanjo, Misaichi Takeuchi, Muneyoshi Suita, Yuji Abe, Toshiyuki Oishi, Yasunori Tokuda, Yoshinobu Aoyagi
2007 Applied Physics Express  
The nanowires grew after the nucleation on the surface. Their length extended with time keeping the direction constant. The growth rate decreased with exponential.  ...  Shubnikov -de Haas oscillations were analyzed with and without the bias and a significant m * increase from 0.15 to 0.22 m0 was observed with the increase in the carrier density due to the strong nonparabolicity  ...  Since electrons in the n-layer flow toward to the p-layer due to forward bias, they cannot directly contribute to the emission current from the n-layer surface.  ... 
doi:10.1143/apex.1.011101 fatcat:z26xgvxevrhlbg4mfksbksjgby

Breakthroughs in Photonics 2011

2012 IEEE Photonics Journal  
The authors also would like to thank P. Wolf, G. Larisch, and W. Unrau for their contribution in processing and measurement.  ...  The authors would like to acknowledge J. A. Lott and N. N. Ledentsov for contributing the vertical layer design. Commercial samples by VI-Systems are in progress.  ...  Alternatively, visible wavelength Vertical Cavity Surface-Emitting Lasers (VCSELs) have been integrated with low dark current GaAs PIN photodiodes for parallel fluorescence and RI sensing [18] .  ... 
doi:10.1109/jphot.2012.2195206 fatcat:phyly4pmsrdtln3eyzrov4luti
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