Filters








37 Hits in 6.7 sec

Temperature impact on reliability of power RF devices under S-band pulsed-RF test

M. A. Belaid, M. Tlig
2020 SN Applied Sciences  
The temperature effect on the parameters of power RF LDMOS (Radio Frequency Laterally Diffused-Metal-Oxide-Semiconductor) devices is highlighted.  ...  The analysis of the physical results has been presented (simulator 2D ATLAS-SILVACO) to explain and observe the physical review of temperature impacts on power RF LDMOS performance.  ...  Metal Oxide Field Effect Transistors (MOSFETs) are the smost used devices in higher power RF field [3] .  ... 
doi:10.1007/s42452-020-2708-1 fatcat:fs3w6rba2fhqlkh5nd7ewd2wmm

Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect

Haifeng Mo, Yaohui Zhang, Helun Song
2019 Active and Passive Electronic Components  
The high electric field at the drift region near the drain will cause more electron-hole pairs generated to trigger the parasitic NPN transistor turn-on, which may cause failure of device.  ...  The adjacent channel power ratio is decreased by 2 dBc; 12% more power can be discharged before the NPN transistor turn-on, indicating a better linearity and robustness.  ...  Conflicts of Interest The authors declare that there are no conflicts of interest regarding the publication of this paper. Acknowledgments  ... 
doi:10.1155/2019/8425198 fatcat:i54k36z3gvhfdpehimk6zpcll4

Table of contents

2020 IEEE Electron Device Letters  
-N. Lu, H.-C. Huang, and S. M. Sze 5552 Causes of the Difference Between Hall Mobility and Field-Effect Mobility for p-Type RF Sputtered Cu 2 O Thin-Film Transistors . . . . . . . . J. Jo, J. D.  ...  Kloes 5381 Effect of Different Metallic Contacts on the Device Performance of a p-n Heterostructure of a Topological Insulator and Silicon (p-Bi 2 Te 3 /n-Si) . . . . . . . . . . . F. Ahmad, K.  ... 
doi:10.1109/led.2020.3033917 fatcat:ja4owc5jbzdjrage75y2zr6u5q

Table of contents

2020 IEEE Transactions on Electron Devices  
-N. Lu, H.-C. Huang, and S. M. Sze 5552 Causes of the Difference Between Hall Mobility and Field-Effect Mobility for p-Type RF Sputtered Cu 2 O Thin-Film Transistors . . . . . . . . J. Jo, J. D.  ...  Kloes 5381 Effect of Different Metallic Contacts on the Device Performance of a p-n Heterostructure of a Topological Insulator and Silicon (p-Bi 2 Te 3 /n-Si) . . . . . . . . . . . F. Ahmad, K.  ... 
doi:10.1109/ted.2020.3037577 fatcat:y5nujrmhdfastlqvtc6etusana

2020 Index IEEE Journal of the Electron Devices Society Vol. 8

2020 IEEE Journal of the Electron Devices Society  
., +, JEDS 2020 644-645 Electron mobility Channel Length Optimization for Planar LDMOS Field-Effect Transistors for Low-Voltage Power Applications.  ...  Analysis on Temperature Dependence of Hot Carrier Degradation by Mech- anism Separation.  ...  Resistors Low-Voltage Hf-ZnO Thin Film Transistors With Ag Nanowires Gate Electrode and Their Application in Logic Circuit. Wu, J., +, JEDS 2020  ... 
doi:10.1109/jeds.2021.3055467 fatcat:yhpqbxl4nffg7mg2cwuskvuuo4

A study of hot-electron degradation effects in pseudomorphic HEMTs

Paolo Cova, Roberto Menozzi, Fausto Fantini, Maura Pavesi, Gaudenzio Meneghesso
1997 Microelectronics and reliability  
Bortolan, E.Zanoni, "Reliability of power pseudomorphic HEMT's submitted to termal and hot-electrons tests", Proc. of ESREF'95, European Symposium on Reliability and Failure Analysis. pp 435-440, Bordeaux  ...  Meneghesso, "A Study of Hot-Electron Degradation Effects in pseudomorphic HEMT's", Proc. of ESREF'95, European Symposium on Reliability and Failure Analysis . pp 383-388, Bordeaux, France, October 1995  ... 
doi:10.1016/s0026-2714(96)00274-0 fatcat:qthmh3b6kzbkdkiwq5xpb4zy7u

2020 Index IEEE Transactions on Electron Devices Vol. 67

2020 IEEE Transactions on Electron Devices  
, DasGupta, A., and Chakravorty, A., Effect of Charge Partitioning on IM3 Prediction in SOI-LDMOS Transistors; 606-613 Gupta, S.K., see Liang, Y., 1297-1304 Gupta, S.K., see Thakuria, N., TED Nov.  ...  , Vega, R.A., Hook, T.B., and Dixit, A., Impact of Hot-Carrier Degradation on Drain-Induced Barrier Lowering in Multifin SOI n-Channel FinFETs With Self-Heating; TED May 2020 2208-2212 Gupta, M., see Kumar  ...  Wainstein, N., +, TED Nov. 2020 5182-5187 Effect of Stress on Pull-in Voltage of RF MEMS SPDT Switch.  ... 
doi:10.1109/ted.2021.3054448 fatcat:r4ertn5jordkfjjvorvss7n6ju

2019 Index IEEE Journal of the Electron Devices Society Vol. 7

2019 IEEE Journal of the Electron Devices Society  
., +, JEDS 2019 512-516 Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning.  ...  ., +, JEDS 2019 512-516 Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning.  ... 
doi:10.1109/jeds.2020.2969758 fatcat:t5gvi7c3ofbvxfv4xv6sngquxq

Acronyms & technical terms

2002 III-Vs review  
New devices or variants of older ones are continually being derived so if you have coined a new acronym -or if we have omitted any -then please feel free to contact us so that they can be added in the  ...  We hope that this acronym listing will help ensure that this directory stays on reference shelves worldwide.  ...  Blue Rigid Graphite Insulation Reflection High Energy Electron Diffraction Resonant Hot-tunnelling Electron Transistor Reaction Ion Beam Etching Reactive Ion Etching Reduced Instruction Set Computing  ... 
doi:10.1016/s0961-1290(02)85235-8 fatcat:ld5f2xk535cmjdvt3vljy6yubm

Silicon technology tradeoffs for radio-frequency/mixed-signal "systems-on-a-chip"

L.E. Larson
2003 IEEE Transactions on Electron Devices  
Silicon technology has progressed over the last several years from a digitally oriented technology to one well suited for microwave and RF applications at a high level of integration.  ...  This paper summarizes the silicon technology issues associated with RF "system-on-a-chip" applications.  ...  This effect is a result of damage to the silicon-oxide interface due to injection of hot electrons at the drain.  ... 
doi:10.1109/ted.2003.810482 fatcat:yi5sw74d3ngc7nz35pv3376vuy

Power amplifier for magnetic resonance imaging using unconventional Cartesian feedback loop

Ashraf Abuelhaija, Klaus Solbach, Adam Buck
2015 2015 German Microwave Conference  
The power amplifier employs the BLF 188XR LDMOS field effect transistor in a balanced final stage and the MRF6V2010 transistor in a driver stage.  ...  It consists of two amplification stages: the MRF6V2010 in a driver stage and the BLF188XR LDMOS field effect push-pull transistor pair in a balanced final stage as shown in Fig. 3 .16.  ... 
doi:10.1109/gemic.2015.7107767 fatcat:5oav7vtcmnhzlk5gaqche5jsti

Millimeter-wave power amplifiers in 45nm CMOS SOI technology

Jing-Hwa Chen, Sultan R. Helmi, Saeed Mohammadi
2011 IEEE 2011 International SOI Conference  
failure.  ...  The f T of a CMOS FET can be expressed: √where C gs and C gd are gate-source and gate-drain capacitors of the transistor, μ n is the electron mobility, W and L are width and length of the transistor, I  ... 
doi:10.1109/soi.2011.6081689 fatcat:3vibcr5at5fa7irjzi7ebytm7e

Comb capacitor structures for measurement of post-processed layers

D. Roy, J. H. Klootwijk, N. A. M. Verhaeghl, H. H. A. J. Roosen, R. A. M. Wolters
2008 2008 IEEE International Conference on Microelectronic Test Structures  
The robustness and repeatability of our approach is demonstrated on a variety of power N-& P-MOSFETs regard- ing to some technological parameters.  ...  The main motivation of this paper relies on specific test structure definition and their RF characterization in order to evaluate the effect of metal dummy fills on the high frequency behaviour of integrated  ... 
doi:10.1109/icmts.2008.4509339 fatcat:zgiqrh4ayjgklhl77jfg3mbvsa

Adaptive RF Front-Ends [chapter]

André van Bezooijen, Reza Mahmoudi, Arthur van Roermund
2010 Adaptive RF Front-Ends for Hand-held Applications  
The effective maximum output power will reduce, however, when, under influence of body-effects, the load impedance of the power transistor increases.  ...  Hence, in this analysis temperature effects can be ignored.  ...  This power limitation reduces maximum radiated power, under extremes, which is a disadvantage of this approach.  ... 
doi:10.1007/978-90-481-9935-8_2 fatcat:7gnvfg42pbaolod5juzqixjyxu

Copyright Page [chapter]

2018 The RF and Microwave Handbook - 3 Volume Set  
No part of this book may be reprinted, reproduced, transmitted, or utilized in any form by any electronic, mechanical, or other means, now known or hereafter invented, including photocopying, microfilming  ...  A wide variety of references are listed.  ...  The RF LDMOS power device is, also discussed, because it can be treated as a three-terminal device, much like a MESFET.  ... 
doi:10.1201/9781315217703-18 fatcat:wmkr4uimdjexjg7wuanbgkolp4
« Previous Showing results 1 — 15 out of 37 results