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An Overview of the Evolution of the Porous Silicon material: A review

Ghazwan Ali, Marwan Hafeedh Younus, Ivan Karomi
2020 Journal of education and science  
In this review, we describe the fabrication techniques and experimental improvements made towards porous silicon (PSi) and we provide a full picture of realization and characterization of this material  ...  In summary, porous silicon has undergone vast improvement in both fabrication and characterization methods, which makes it an attractive modern material.  ...  Acknowledgment The authors want to thank and appreciate the staff at the Department of Physics, College of Education for Pure Science, University of Mosul for providing research facilities required to  ... 
doi:10.33899/edusj.2020.128341.1111 fatcat:kl45swtemfgulczp5x6mvred6m

A Three-Dimensional Porous Silicon p-n Diode for Betavoltaics and Photovoltaics

W. Sun, N. P. Kherani, K. D. Hirschman, L. L. Gadeken, P. M. Fauchet
2005 Advanced Materials  
A unique three-dimensional (3D) porous silicon p±n diode has been developed to form the basis of a novel betavoltaic battery.  ...  Given the similarity of the energyconversion physics for betavoltaic and photovoltaic devices, significant efficiency gains due to this 3D geometry might be expected for many types of photo detectors and  ...  Experimental Porous Silicon Fabrication: Boron-doped p<100> silicon wafers (550 lm thick with a resistivity of 20±30 X cm) were used as the substrates (Fig. 1a) .  ... 
doi:10.1002/adma.200401723 fatcat:32c7w3yukfbxjafxpub2jr7vwu

Characterization of high refractive index semiconductor films by surface plasmon resonance

Sergiy Patskovsky, Souleymane Bah, Michel Meunier, Andrei V. Kabashin
2006 Applied Optics  
Using SPR data, we determine the refractive indices of these films for different parameters (thickness and porosity) and ambiences.  ...  As examples we study the SPR responses for some important semiconductor-based films, including laserablated porous silicon and thin germanium films.  ...  The authors thank Ludvik Martinu of the Department of Engineering Physics, Ecole Polytechnique de Montreal, for assistance with the experimental facilities.  ... 
doi:10.1364/ao.45.006640 pmid:16912808 fatcat:3sklkqxl6jh67oegjz6mrky72m

Micro and nanophotonics in silicon: new perspectives and applications

Maurizio Casalino, Giuseppe Coppola, Principia Dardano, Luca De Stefano, Edoardo De Tommasi, Antonella Ferrara, Mariano Gioffrè, Mario Iodice, Vito Mocella, Ilaria Rea, Luigi Sirleto, Ivo Rendina (+1 others)
2009 Photonic Materials, Devices, and Applications III  
Moreover we report on the fabrication and characterization of silicon photodetectors working at near-infrared wavelengths based on the internal photoemission absorption in a Schottky junction.  ...  Microarray of porous silicon Bragg reflectors on a crystalline silicon substrate have been realized using a technological process based on standard photolithography and electrochemical anodization of the  ...  Mariano Gioffrè and Dr. Luigi Sirleto for fruitful discussions and feedback on the contents of this work.  ... 
doi:10.1117/12.822676 fatcat:aknqke44yfhk7hvegmiyohyzpq

Silicon Photodetectors Based on Internal Photoemission Effect: The Challenge of Detecting Near-Infrared Light [chapter]

Maurizio Casalino, Luigi Sirleto, Mario Iodice, Giuseppe Coppol
2012 Photodetectors  
The details of the geometry, and the method of charge transfer differ for different manufacturers.  ...  A detailed analysis was reported Photodetectors 70 on the influence of the silicide layer dimension on the performances of both NiSi 2 /p-Si and NiSi 2 /n-Si diodes.  ...  In the first section of the book nine different types of photodetectors and their characteristics are presented. Next, some theoretical aspects and simulations are discussed.  ... 
doi:10.5772/36014 fatcat:s37sjsy6ubdchlj3tycltctaq4

Structural, Morphological and Electrical Properties of Porous Silicon Prepared Under Laser Illumination [article]

Oday A. Al-Owaedi
2016 arXiv   pre-print
The SEM images shows that the values of pore width and PSi layer thickness increases from (0.5 to 6.25 micrometer) and (6.7 to 47 micrometer) respectively with increasing of etching times and silicon substrates  ...  Porous silicon (PSi) layers has been prepared in this work via photoelectrochemical (PEC) etching process of an n type silicon wafers of two resistivities (3.5 and 0.02 in hydrofluoric (  ...  ideality factor of the fabricated silicon/porous silicon junctions.  ... 
arXiv:1612.04865v1 fatcat:x6qhv5ngj5crxaniqaci77gbgu

MicroRaman Study of Nanostructured Ultra-Thin AlGaN/GaN Thin Films Grown on Hybrid Compliant SiC/Por-Si Substrates

Aleksandr Lenshin, Pavel Seredin, Dmitry Goloshchapov, Ali O. Radam, Andrey Mizerov
2022 Coatings  
of thick AIIIN buffer layers.  ...  Direct growth on a hybrid compliant substrate of SiC/porSi leads to a substantial relaxation in the elastic stresses between the epitaxial film, porous silicon, and silicon carbide, which consequently  ...  Acknowledgments: The authors would like to thank Anatoly Lukin for their help with the experiments. Conflicts of Interest: The authors declare no conflict of interest. Coatings 2022, 12, 626  ... 
doi:10.3390/coatings12050626 fatcat:jnpp5eq2zzas5jfn43d6stwr3y

Embedded Silicon Nanoparticles as Enabler of a Novel CMOS-Compatible Fully Integrated Silicon Photonics Platform

Alfredo A. González-Fernández, Mariano Aceves-Mijares, Oscar Pérez-Díaz, Joaquin Hernández-Betanzos, Carlos Domínguez
2021 Crystals  
Integrable light sources based in Si nanoparticles can be obtained by different CMOS (Complementary Metal Oxide Semiconductor) -compatible materials and techniques.  ...  We present the advances and perspectives on seamless monolithic integration of CMOS-compatible visible light emitters, photonic elements, and photodetectors, which are shown to be viable and promising  ...  Acknowledgments: The authors acknowledge the support by CONACyT. Conflicts of Interest: The authors declare no conflict of interest.  ... 
doi:10.3390/cryst11060630 fatcat:x3md3cnolbc6pjei3bne553bci

Review of Microfluidic Devices and Imaging Techniques for Fluid Flow Study in Porous Geomaterials

Amir Jahanbakhsh, Krystian L. Wlodarczyk, Duncan P. Hand, Robert R. J. Maier, M. Mercedes Maroto-Valer
2020 Sensors  
colloid transport", and finally "porous media characterization".  ...  This includes a comprehensive analysis of critical aspects of fabrication techniques of micromodels, and the most recent advances such as embedding fibre optic sensors in micromodels for research applications  ...  They fabricated two silicon-Pyrex micromodels with different degrees of heterogeneity using the technique presented by Chomsurin and Werth [327] .  ... 
doi:10.3390/s20144030 pmid:32698501 pmcid:PMC7412536 fatcat:akefhxesenccrfddzlpof5mmb4

Mid-infrared materials and devices on a Si platform for optical sensing

Vivek Singh, Pao Tai Lin, Neil Patel, Hongtao Lin, Lan Li, Yi Zou, Fei Deng, Chaoying Ni, Juejun Hu, James Giammarco, Anna Paola Soliani, Bogdan Zdyrko (+9 others)
2014 Science and Technology of Advanced Materials  
The authors also would like to thank S Kozacik, M Murakowski and D Prather for assistance with mid-IR device fabrication. Disclaimer.  ...  HDTRA1-10-1-0101 and HDTRA1-13-1-0001 and the National Science Foundation under award number 1200406 and EPSCoR grant number EPS-0814251.  ...  A pedestal geometry allows us to fabricate mid-IR single crystal silicon waveguides, both with and without an oxide undercladding, for broadband sensing applications based on optical attenuation of the  ... 
doi:10.1088/1468-6996/15/1/014603 pmid:27877641 pmcid:PMC5090602 fatcat:kf67ot6a7bbctezkxbvoserniu

Optical filtering by leaky guided modes in macroporous silicon

Ivan Avrutsky, Vladimir Kochergin
2003 Applied Physics Letters  
The spectral transmission characteristics of such filters can be controlled by applying thin-film coatings to the pore walls.  ...  Such filters will find application in the deep UV spectral range where traditional approaches to filter design fail due to lack of suitable materials.  ...  They acknowledge the help of Yuri Danylyuk, Center for Smart Sensors and Integrated Microsystems, Wayne State University, in measuring the transmission spectra.  ... 
doi:10.1063/1.1577382 fatcat:ybpwe3xtejdyhmup6khi56seoy

Front Matter: Volume 10224

2017 International Conference on Micro- and Nano-Electronics 2016  
Utilization of CIDs allows articles to be fully citable as soon as they are published online, and connects the same identifier to all online and print versions of the publication.  ...  These two-number sets start with 00, 01, 02, 03, 04,  ...  with rhenium as an advanced material for heat-resistant silicon ICs interconnects 10224 05 Metal-assisted chemical etching of silicon with different metal films and clusters: a review 10224 06 Mechanical  ... 
doi:10.1117/12.2270028 fatcat:nsn4yjeifbgshnn2e6hjpezx5q

Laser-induced graphene for bioelectronics and soft actuators

Yadong Xu, Qihui Fei, Margaret Page, Ganggang Zhao, Yun Ling, Dick Chen, Zheng Yan
2021 Nano Reseach  
The applications of LIG in flexible energy generators and photodetectors are also introduced.  ...  Finally, we briefly discuss the future challenges and opportunities of LIG fabrications and applications.  ...  Y. acknowledges the financial support from the NSF grant (ECCS-1917630) and University of Missouri-Columbia startup fund.  ... 
doi:10.1007/s12274-021-3441-9 pmid:33841746 pmcid:PMC8023525 fatcat:27aed2m2mregxi5fffa2ay2wpi

Effect of rapid thermal annealing on crystallization and stress relaxation of SiGe nanoparticles deposited by ICP PECVD

Florent Ravaux, Nitul S. Rajput, Jehad Abed, Leslie George, Mike Tiner, Mustapha Jouiad
2017 RSC Advances  
This work demonstrates the viability of direct fabrication utilizing a single (deposition/anneal) process for polycrystalline silicon germanium sub-micro particles.  ...  Acknowledgements This work was carried out using state of the art Micro/Nano Fabrication, SPM/Raman and Electron Microscopy facilities at Masdar Institute of Science and technology using internal seed  ...  Notes and references  ... 
doi:10.1039/c7ra04426g fatcat:dxfb3maf35a2fp4sqoxhwnexey

Heterogeneous Optoelectronic Characteristics of Si Micropillar Arrays Fabricated by Metal-Assisted Chemical Etching [article]

Yang Qian, David J. Magginetti, Seokmin Jeon, Yohan Yoon, Tony L. Olsen, Maoji Wang, Jordan M. Gerton, Heayoung P. Yoon
2020 arXiv   pre-print
On the basis of our analysis, we find an unexpected PL increase (about 540 nm) at the oil/shell interface.  ...  Recent progress achieved in metal-assisted chemical etching (MACE) has enabled the production of high-quality micropillar arrays for various optoelectronic applications.  ...  The final geometry of the Si arrays depends on processing parameters, including the thickness/shape of metal, the concentration of etchant, and the orientation/doping density of the substrate 2,5 .  ... 
arXiv:2006.16308v1 fatcat:sdjwxgyl6rbsbcsmckjt56aowy
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