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Carbon nanotube field effect transistors for high performance analog applications: An optimum design approach
2010
Microelectronics Journal
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distance) variations of carbon nanotubes in a CNFET transistor in pure and hybrid technologies for area, power and performance optimization. ...
There is a need to explore circuit designs in new emerging technologies for their rapid commercialization to extend Moore's law beyond 22 nm technology node. ...
There has been a lot of work available in the literature on the digital applications of CNFET but its analog applications have not been explored [9, 10] . ...
doi:10.1016/j.mejo.2010.04.011
fatcat:g47vdr4tezaotdhsi7pbddhn2i
Performance of Gate Engineered Symmetric Double Gate MOS Devices and circuits for ultra-low power Analog and RF applications
2020
International Journal of Advanced Trends in Computer Science and Engineering
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The circuit performance of a simple inverting amplifier with both DMG and SMG double gate devices is also studied by variation of the load resistance. ...
A systematic investigation, with the help of extensive device simulations, considering the effects of Dual Material Gate (DMG) technology on the sub-threshold and superthreshold analog performance and ...
Therefore, the design of devices and circuits for such ultra-low power applications is a challenging task. ...
doi:10.30534/ijatcse/2020/52922020
fatcat:hmpclix4cvcqhgtnxwld276yu4
Device applications of epitaxial graphene on silicon carbide
2016
Vacuum
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Here, we present a review of the major current explorations of graphene on SiC in electronic devices, such as field effect transistors (FET), radio frequency (RF) transistors, integrated circuits (IC), ...
These properties in addition to a high current density up to 10 9 A/cm 2 and high thermal conductivity up to 5000 W m −1 K −1 [4] make it extremely appealing for applications in electronics. ...
RY would like to acknowledge Swedish Research Council for financial support via contracts VR 621-2014-5805 and the LiU Linnaeus Grant. ...
doi:10.1016/j.vacuum.2016.03.027
fatcat:smcesgmf6fdhphqbfgznouplbu
Modelling of field-effect transistors based on 2D materials targeting high-frequency applications
[article]
2017
arXiv
pre-print
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Graphene, a one-atom-thick of carbon, is a promising material for high-frequency applications due to its intrinsic superior carrier mobility and very high saturation velocity. ...
This thesis presents a body of work on the modelling, performance prediction and simulation of GRM-based field-effect transistors and circuits. ...
Such designs must be carried out together with a study of the stability issue, which deals with the necessary conditions for a transistor to be stable when acting as a power amplifier. ...
arXiv:1709.01324v1
fatcat:6wsrs4xv55c2rclm6zsg7znmpm
Low Power Design for Future Wearable and Implantable Devices
2016
Journal of Low Power Electronics and Applications
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This development calls for new technologies on several fronts, both on device level and circuitry, systems and applications. ...
amplifiers. ...
In the following section, some circuit tricks to design low voltage operational amplifiers (opamp), which is the most representative analog circuit, will be explored. ...
doi:10.3390/jlpea6040020
fatcat:tf7shjsb25ckjmobfshjrxyqmm
Graphene Transistors
[chapter]
2011
Physics and Applications of Graphene - Experiments
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Epitaxial graphene RF FETs on SiC for analog application While DC performance has been extensively studied just a few small signal characterizations have been done so far. ...
Here, we explore the effects of metal contacts on the operation and scalability of 2D graphene FETs using detailed numerical device simulations based on the non-equilibrium Green's function (NEGF) formalism ...
The two volumes Physics and Applications of Graphene -Experiments and Physics and Applications of Graphene -Theory contain a collection of research articles reporting on different aspects of experimental ...
doi:10.5772/14307
fatcat:tb2vhlzgszdh3ol56gbgajib7m
Stacked strained silicon transistors for low-power high-performance circuit applications
2008
2008 58th Electronic Components and Technology Conference
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One of the principal economic drivers for the semiconductor industry is high performance, low power applications for the portable electronics consumer market. ...
This thesis explores the applicability of this technology to low-power and high-speed digital and analogue designs by analyzing the power and performance characteristics of a range of circuits. ...
This particular property of strained-Si circuits make them more attractive for ultra low-voltage (and consequently, ultra low-power) operation and thus, strained-Si circuits have greater potential than ...
doi:10.1109/ectc.2008.4550224
fatcat:ijp5zrokxbebrlv5w2b7ua2c44
Digital and analog TFET circuits: Design and benchmark
2018
Solid-State Electronics
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As for analog circuits, an operational transconductance amplifier (OTA) has been studied in [52], while a 6-bit successive approximation register (SAR) ADC has been simulated in [53] considering complementary ...
After the initial report in [1], complementary-metal-oxide-semiconductor (CMOS) transistors based on band-to-bandtunneling (BtBT), usually referred to as Tunnel-FETs (TFETs), have been extensively explored ...
A similar benchmarking study for the main analog FOMs of several building blocks (such as operational transconductance amplifier, track-and-hold, current mirror, differential pair, diode connected transistor ...
doi:10.1016/j.sse.2018.05.003
fatcat:ptppcp6mancw7glfdwpvaiyoem
2021 Index IEEE Transactions on Nanotechnology Vol. 20
2021
IEEE transactions on nanotechnology
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The Author Index contains the primary entry for each item, listed under the first author's name. ...
Ma, C., +, TNANO 2021 99-103 Effect of Doping on TiO 2 Nanotubes Based Electrochemical Sensors: Glucose Sensing as a Case Study. Sharma, S., +, TNANO 2021 185-193 cose Sensing as a Case Study. ...
Effect of Doping on TiO 2 Nanotubes Based Electrochemical Sensors: Glucose Sensing as a Case Study. ...
doi:10.1109/tnano.2022.3150634
fatcat:kqd7as2bbbgl7dfbcsol32yzkq
Novel Concepts for Organic Transistors: Physics, Device Design, and Applications
[article]
2021
arXiv
pre-print
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Furthermore, the exploration of OECTs for neuromorphic computing will create a whole new research field across the disciplines of physics, material, and computer science. ...
Overall, this thesis adds substantially new insight into the field of organic electronics and draws a vision towards further research and applications. ...
Thanks also to Shen and Jonas for their work on the organic photodetectors. Furthermore, I am grateful to Micha and Felix for proof-reading. ...
arXiv:2111.09430v1
fatcat:hemjnbscwvfo7l3i33f7se3gru
Enabling Internet-of-Things: Opportunities brought by emerging devices, circuits, and architectures
2016
2016 IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC)
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This chapter focuses on a different dimension, exploring how emerging beyond-CMOS devices, such as tunnel field effect transistor (TFET) and negative capacitance FET (NCFET), and the circuits and architectures ...
built upon them, could extend the low-power design space to enable IoT applications with beyond-CMOS features. ...
This work was supported in part by the Center for Low Energy Systems Technology (LEAST), one of the six SRC STARnet centers, sponsored by MARCO and DARPA, by NSF awards 1160483 (ASSIST), and NSF Expeditions ...
doi:10.1109/vlsi-soc.2016.7753542
dblp:conf/vlsi/LiMGSN16
fatcat:fhgpbc5ghvclvadzdigajzvgi4
Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing
2013
Chemical Society Reviews
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Note that this fulltext copy is not of the "primary" version of this work. The version it corresponds to is:
2014 pre-print arXiv:1402.0046v1 fatcat:wnvbruyiyzaqlal3scmlhyvjhy
Here, we present an extensive review of carbon nanomaterials in electronic, optoelectronic, photovoltaic, and sensing devices with a particular focus on the latest examples based on the highest purity ...
Specific attention is devoted to each class of carbon nanomaterial, thereby allowing comparative analysis of the suitability of fullerenes, carbon nanotubes, and graphene for each application area. ...
important for analog electronic applications where one of the main goals is power amplification at high frequencies. ...
doi:10.1039/c2cs35335k
pmid:23124307
fatcat:c3es42jkpzhavifm3eoexpkaoq
Sensing of single electrons using micro and nano technologies: a review
2017
Nanotechnology
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Operational amplifier based readout circuits (used in existing electrometers), such as a transimpedance amplifier (TIA), a charge amplifier, and a resistive gain amplifier, exhibit three common electrical ...
One of the reasons for the low resolution and moderate sensitivity of this instrument is due to the preamplifier's built-in input noise, i.e. preamp noise. ...
; ultra-high natural resonance frequencies; ultra-high sensitivities for very small stimuli; ultra-low power consumption for actuation forces; and ultra-fast response time to applied forces. ...
doi:10.1088/1361-6528/aa57aa
pmid:28273047
fatcat:ccdihnguzveyloylb5xkwgbpbe
Electronics Below 10 nm
[chapter]
2003
Nano and Giga Challenges in Microelectronics
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Lithographically defined SETs can hardly be a panacea, since the critical dimension of such transistor (its single-electron island size) for the room temperature operation should be below ~1 nm. ...
This chapter reviews prospects for the development and practical introduction of ultrasmall electron devices, including nanoscale field-effect transistors (FETs) and single-electron transistors (SETs), ...
These barriers cause additional reduction of device transparency; as a result, in most
cases the tunnel transistor transconductance and ON current were rather low.) ...
doi:10.1016/b978-044451494-3/50002-0
fatcat:mnnrwqks5bekpb2kcqo3tcbxzu
2020 Index IEEE Transactions on Electron Devices Vol. 67
2020
IEEE Transactions on Electron Devices
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Gate-All-Around Nanowire FETs; TED Jan. 2020 4-10 Gupta, C., Gupta, A., Vega, R.A., Hook, T.B., and Dixit, A., Impact of Hot-Carrier Degradation on Drain-Induced Barrier Lowering in Multifin SOI n-Channel ...
Layered Systems: Graphene Case Study; 627-632 Natal, M., see Murooka, T., TED Jan. 2020 212-216 Natarajan, S., see Mohamed Sathik, M.H., 1098-1105 Nath, D.N., see Remesh, N., 2311-2317 Nath, D.N. ...
Zeng, K., +, TED June 2020 2457-2462 Device and Circuit-Level Assessment of GaSb/Si Heterojunction Vertical Tunnel-FET for Low-Power Applications. ...
doi:10.1109/ted.2021.3054448
fatcat:r4ertn5jordkfjjvorvss7n6ju
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