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Carbon nanotube field effect transistors for high performance analog applications: An optimum design approach

Fahad Ali Usmani, Mohammad Hasan
2010 Microelectronics Journal  
distance) variations of carbon nanotubes in a CNFET transistor in pure and hybrid technologies for area, power and performance optimization.  ...  There is a need to explore circuit designs in new emerging technologies for their rapid commercialization to extend Moore's law beyond 22 nm technology node.  ...  There has been a lot of work available in the literature on the digital applications of CNFET but its analog applications have not been explored [9, 10] .  ... 
doi:10.1016/j.mejo.2010.04.011 fatcat:g47vdr4tezaotdhsi7pbddhn2i

Performance of Gate Engineered Symmetric Double Gate MOS Devices and circuits for ultra-low power Analog and RF applications

Mohankumar N
2020 International Journal of Advanced Trends in Computer Science and Engineering  
The circuit performance of a simple inverting amplifier with both DMG and SMG double gate devices is also studied by variation of the load resistance.  ...  A systematic investigation, with the help of extensive device simulations, considering the effects of Dual Material Gate (DMG) technology on the sub-threshold and superthreshold analog performance and  ...  Therefore, the design of devices and circuits for such ultra-low power applications is a challenging task.  ... 
doi:10.30534/ijatcse/2020/52922020 fatcat:hmpclix4cvcqhgtnxwld276yu4

Device applications of epitaxial graphene on silicon carbide

M. Beshkova, L. Hultman, R. Yakimova
2016 Vacuum  
Here, we present a review of the major current explorations of graphene on SiC in electronic devices, such as field effect transistors (FET), radio frequency (RF) transistors, integrated circuits (IC),  ...  These properties in addition to a high current density up to 10 9 A/cm 2 and high thermal conductivity up to 5000 W m −1 K −1 [4] make it extremely appealing for applications in electronics.  ...  RY would like to acknowledge Swedish Research Council for financial support via contracts VR 621-2014-5805 and the LiU Linnaeus Grant.  ... 
doi:10.1016/j.vacuum.2016.03.027 fatcat:smcesgmf6fdhphqbfgznouplbu

Modelling of field-effect transistors based on 2D materials targeting high-frequency applications [article]

Francisco Pasadas
2017 arXiv   pre-print
Graphene, a one-atom-thick of carbon, is a promising material for high-frequency applications due to its intrinsic superior carrier mobility and very high saturation velocity.  ...  This thesis presents a body of work on the modelling, performance prediction and simulation of GRM-based field-effect transistors and circuits.  ...  Such designs must be carried out together with a study of the stability issue, which deals with the necessary conditions for a transistor to be stable when acting as a power amplifier.  ... 
arXiv:1709.01324v1 fatcat:6wsrs4xv55c2rclm6zsg7znmpm

Low Power Design for Future Wearable and Implantable Devices

Katrine Lundager, Behzad Zeinali, Mohammad Tohidi, Jens Madsen, Farshad Moradi
2016 Journal of Low Power Electronics and Applications  
This development calls for new technologies on several fronts, both on device level and circuitry, systems and applications.  ...  amplifiers.  ...  In the following section, some circuit tricks to design low voltage operational amplifiers (opamp), which is the most representative analog circuit, will be explored.  ... 
doi:10.3390/jlpea6040020 fatcat:tf7shjsb25ckjmobfshjrxyqmm

Graphene Transistors [chapter]

Kristof Tahy, Tian Fang, Pei Zhao, Aniruddha Konar, Chuanxin Lian, Huili Grace, Michelle Kelly, Debdeep Je
2011 Physics and Applications of Graphene - Experiments  
Epitaxial graphene RF FETs on SiC for analog application While DC performance has been extensively studied just a few small signal characterizations have been done so far.  ...  Here, we explore the effects of metal contacts on the operation and scalability of 2D graphene FETs using detailed numerical device simulations based on the non-equilibrium Green's function (NEGF) formalism  ...  The two volumes Physics and Applications of Graphene -Experiments and Physics and Applications of Graphene -Theory contain a collection of research articles reporting on different aspects of experimental  ... 
doi:10.5772/14307 fatcat:tb2vhlzgszdh3ol56gbgajib7m

Stacked strained silicon transistors for low-power high-performance circuit applications

H. Ramakrishnan, S. Shedabale, G. Russell, A. Yakovlev
2008 2008 58th Electronic Components and Technology Conference  
One of the principal economic drivers for the semiconductor industry is high performance, low power applications for the portable electronics consumer market.  ...  This thesis explores the applicability of this technology to low-power and high-speed digital and analogue designs by analyzing the power and performance characteristics of a range of circuits.  ...  This particular property of strained-Si circuits make them more attractive for ultra low-voltage (and consequently, ultra low-power) operation and thus, strained-Si circuits have greater potential than  ... 
doi:10.1109/ectc.2008.4550224 fatcat:ijp5zrokxbebrlv5w2b7ua2c44

Digital and analog TFET circuits: Design and benchmark

S. Strangio, F. Settino, P. Palestri, M. Lanuzza, F. Crupi, D. Esseni, L. Selmi
2018 Solid-State Electronics  
As for analog circuits, an operational transconductance amplifier (OTA) has been studied in [52], while a 6-bit successive approximation register (SAR) ADC has been simulated in [53] considering complementary  ...  After the initial report in [1], complementary-metal-oxide-semiconductor (CMOS) transistors based on band-to-bandtunneling (BtBT), usually referred to as Tunnel-FETs (TFETs), have been extensively explored  ...  A similar benchmarking study for the main analog FOMs of several building blocks (such as operational transconductance amplifier, track-and-hold, current mirror, differential pair, diode connected transistor  ... 
doi:10.1016/j.sse.2018.05.003 fatcat:ptppcp6mancw7glfdwpvaiyoem

2021 Index IEEE Transactions on Nanotechnology Vol. 20

2021 IEEE transactions on nanotechnology  
The Author Index contains the primary entry for each item, listed under the first author's name.  ...  Ma, C., +, TNANO 2021 99-103 Effect of Doping on TiO 2 Nanotubes Based Electrochemical Sensors: Glucose Sensing as a Case Study. Sharma, S., +, TNANO 2021 185-193 cose Sensing as a Case Study.  ...  Effect of Doping on TiO 2 Nanotubes Based Electrochemical Sensors: Glucose Sensing as a Case Study.  ... 
doi:10.1109/tnano.2022.3150634 fatcat:kqd7as2bbbgl7dfbcsol32yzkq

Novel Concepts for Organic Transistors: Physics, Device Design, and Applications [article]

Hans Kleemann
2021 arXiv   pre-print
Furthermore, the exploration of OECTs for neuromorphic computing will create a whole new research field across the disciplines of physics, material, and computer science.  ...  Overall, this thesis adds substantially new insight into the field of organic electronics and draws a vision towards further research and applications.  ...  Thanks also to Shen and Jonas for their work on the organic photodetectors. Furthermore, I am grateful to Micha and Felix for proof-reading.  ... 
arXiv:2111.09430v1 fatcat:hemjnbscwvfo7l3i33f7se3gru

Enabling Internet-of-Things: Opportunities brought by emerging devices, circuits, and architectures

Xueqing Li, Kaisheng Ma, Sumitha George, John Sampson, Vijaykrishnan Narayanan
2016 2016 IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC)  
This chapter focuses on a different dimension, exploring how emerging beyond-CMOS devices, such as tunnel field effect transistor (TFET) and negative capacitance FET (NCFET), and the circuits and architectures  ...  built upon them, could extend the low-power design space to enable IoT applications with beyond-CMOS features.  ...  This work was supported in part by the Center for Low Energy Systems Technology (LEAST), one of the six SRC STARnet centers, sponsored by MARCO and DARPA, by NSF awards 1160483 (ASSIST), and NSF Expeditions  ... 
doi:10.1109/vlsi-soc.2016.7753542 dblp:conf/vlsi/LiMGSN16 fatcat:fhgpbc5ghvclvadzdigajzvgi4

Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing

Deep Jariwala, Vinod K. Sangwan, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam
2013 Chemical Society Reviews  
Here, we present an extensive review of carbon nanomaterials in electronic, optoelectronic, photovoltaic, and sensing devices with a particular focus on the latest examples based on the highest purity  ...  Specific attention is devoted to each class of carbon nanomaterial, thereby allowing comparative analysis of the suitability of fullerenes, carbon nanotubes, and graphene for each application area.  ...  important for analog electronic applications where one of the main goals is power amplification at high frequencies.  ... 
doi:10.1039/c2cs35335k pmid:23124307 fatcat:c3es42jkpzhavifm3eoexpkaoq

Sensing of single electrons using micro and nano technologies: a review

Jubayer Jalil, Yong Zhu, Chandima Ekanayake, Yong Ruan
2017 Nanotechnology  
Operational amplifier based readout circuits (used in existing electrometers), such as a transimpedance amplifier (TIA), a charge amplifier, and a resistive gain amplifier, exhibit three common electrical  ...  One of the reasons for the low resolution and moderate sensitivity of this instrument is due to the preamplifier's built-in input noise, i.e. preamp noise.  ...  ; ultra-high natural resonance frequencies; ultra-high sensitivities for very small stimuli; ultra-low power consumption for actuation forces; and ultra-fast response time to applied forces.  ... 
doi:10.1088/1361-6528/aa57aa pmid:28273047 fatcat:ccdihnguzveyloylb5xkwgbpbe

Electronics Below 10 nm [chapter]

Konstantin Likharev
2003 Nano and Giga Challenges in Microelectronics  
Lithographically defined SETs can hardly be a panacea, since the critical dimension of such transistor (its single-electron island size) for the room temperature operation should be below ~1 nm.  ...  This chapter reviews prospects for the development and practical introduction of ultrasmall electron devices, including nanoscale field-effect transistors (FETs) and single-electron transistors (SETs),  ...  These barriers cause additional reduction of device transparency; as a result, in most cases the tunnel transistor transconductance and ON current were rather low.)  ... 
doi:10.1016/b978-044451494-3/50002-0 fatcat:mnnrwqks5bekpb2kcqo3tcbxzu

2020 Index IEEE Transactions on Electron Devices Vol. 67

2020 IEEE Transactions on Electron Devices  
Gate-All-Around Nanowire FETs; TED Jan. 2020 4-10 Gupta, C., Gupta, A., Vega, R.A., Hook, T.B., and Dixit, A., Impact of Hot-Carrier Degradation on Drain-Induced Barrier Lowering in Multifin SOI n-Channel  ...  Layered Systems: Graphene Case Study; 627-632 Natal, M., see Murooka, T., TED Jan. 2020 212-216 Natarajan, S., see Mohamed Sathik, M.H., 1098-1105 Nath, D.N., see Remesh, N., 2311-2317 Nath, D.N.  ...  Zeng, K., +, TED June 2020 2457-2462 Device and Circuit-Level Assessment of GaSb/Si Heterojunction Vertical Tunnel-FET for Low-Power Applications.  ... 
doi:10.1109/ted.2021.3054448 fatcat:r4ertn5jordkfjjvorvss7n6ju
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