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Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping

Lorenzo Ceccarelli, Ramchandra Kotecha, Francesco Iannuzzo, Alan Mantooth
2018 2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC)  
A fast electro-thermal simulation strategy for SiC power MOSFETs is presented in this paper.  ...  This approach features the detailed mapping of the device power losses under a wide range of operating conditions by using a compact electrical model and its experimental validation for a 1.2 kV/ 36 A  ...  The performance and results have been compared to an equivalent Saber circuit simulation. II. ELECTRO-THERMAL MODEL STRUCTURE A.  ... 
doi:10.1109/peac.2018.8590288 fatcat:dc46tnd4unbbzgy7ta57rc2zf4

A study on electro thermal response of SiC power module during high temperature operation

Tsuyoshi Funaki, Akira Nishio, Tsunenobu Kimoto, Takashi Hikihara
2008 IEICE Electronics Express  
The temperature dependency of electrical characteristics of the SiC device and thermal dynamics of the power module are modeled for numerical electro thermal analysis.  ...  The experimental results validate the numerical analysis results of the modeled SiC power module.  ...  Acknowledgments This research was supported in part by the Ministry of Education, Culture, Sports, Sciences and Technology in Japan, the Grant-in-Aid for Scientific Research no. 17686024, 18360137, the  ... 
doi:10.1587/elex.5.597 fatcat:wrzfooaxhbcs7kswj7hkof2fsq

Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions

Lorenzo Ceccarelli, Paula Diaz Reigosa, Amir Sajjad Bahman, Francesco Iannuzzo, Frede Blaabjerg
2017 IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society  
A novel physics-based, electro-thermal model which is capable of estimating accurately the short-circuit behavior and thermal instabilities of silicon carbide MOSFET multi-chip power modules is proposed  ...  The estimation of overcurrent and temperature distribution among the chips can provide useful information for the reliability assessment and fault-mode analysis of a new-generation SiC high-power modules  ...  SIC POWER MOSFET SHORT-CIRCUIT BEHAVIOR The short-circuit robustness is a key factor in the reliability of power devices. SiC MOSFETs thermal instabilities are studied in [18] .  ... 
doi:10.1109/iecon.2017.8216842 dblp:conf/iecon/CeccarelliRBIB17 fatcat:olr6dfokxjdgbpt37xwrrk2cpe

A fast electro-thermal co-simulation modeling approach for SiC power MOSFETs

Lorenzo Ceccarelli, Amir Sajjad Bahman, Francesco Iannuzzo, Frede Blaabjerg
2017 2017 IEEE Applied Power Electronics Conference and Exposition (APEC)  
The parameters for a CREE 1.2 kV/30 A SiC MOSFET have been identified and the electro-thermal model has been validated through experimental and manufacturer's data.  ...  The purpose of this work is to propose a novel electrothermal co-simulation approach for the new generation of SiC MOSFETs, by development of a PSpice-based compact and physical SiC MOSFET model including  ...  CONCLUSIONS A novel electro-thermal modeling approach for SiC Power MOSFETs based on co-simulation has been developed and tested.  ... 
doi:10.1109/apec.2017.7930813 fatcat:h7wlcheabzczvi62jjycnwohwa

Electro-thermal simulation of a 100 A, 10 kV half-bridge SiC MOSFET/JBS power module

T. H. Duong, J. M. Ortiz-Rodriguez, R. N. Raju, A. R. Hefner
2008 Power Electronics Specialist Conference (PESC), IEEE  
The simulations are performed using recently developed and validated physics-based electrical and thermal models.  ...  This paper presents the results from a parametric simulation study that was conducted to optimize the performance of 100 A, 10 kV, 20 kHz half-bridge SiC MOSFET/JBS power modules.  ...  Fig. 8 shows the electro-thermal simulations for the circuit shown in Fig. 7 and a module configuration similar to Case 5 of Table 1 .  ... 
doi:10.1109/pesc.2008.4592167 fatcat:z65kiiawyvehbeuubxmzt2nvbe

Modelling Framework for Parallel SiC Power MOSFETs Chips in Modules developed by Planar Technology

Tamer Kamel, Antonio Griffo, Jiabin Wang
2018 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC)  
This paper presents a modelling framework to simulate transients and steady state performance for SiC power MOSFETs modules.  ...  The simulated model is then experimentally validated at different voltage buses and junction temperatures for a novel SiC MOSFET Module design consists of two parallel chips per switch developed using  ...  A number of models suitable for electrical and coupled electro-thermal simulation of SiC power MOSFETs have been proposed in literature [4] [5] [6] [7] [8] [9] [10] .  ... 
doi:10.1109/esars-itec.2018.8607625 fatcat:5rgdkocaivbonknpiuz6q5qbzq

Assessment of surge current capabilities of SiC-based high-power diodes through physics-based mixed-mode electro-thermal simulations

F. Cappelluti, F. Bonani, G. Ghione
2009 2009 International Semiconductor Device Research Symposium  
Assessment of Surge Current Capabilities of SiC-based High-Power Diodes Through Physics-Based Mixed-Mode Electro-Thermal Simulations Federica Cappelluti, , Fabrizio Bonani and Giovanni Ghione Department  ...  FEM based thermal simulation of unpackaged devices.  ... 
doi:10.1109/isdrs.2009.5378249 fatcat:5mnorm63kbed7na2ahlthgsuhy

Thermal and electro-thermal modeling of components and systems: A review of the research at the University of Parma

Roberto Menozzi, Paolo Cova, Nicola Delmonte, Francesco Giuliani, Giovanna Sozzi
2015 Facta universitatis - series Electronics and Energetics  
This activity includes: (i) Finite-Element 3D simulation for the thermal analysis of a hierarchy of structures ranging from bare device dies to complex systems including active and passive devices, boards  ...  , metallizations, and air-and water-cooled heat-sinks, and (ii) Lumped-Element thermal or electro-thermal models of bare and packaged devices, ranging from purely empirical to strictly physics-and geometry-based  ...  These models lose some of the physical detail of FE models, but are amenable to integration inside circuit simulation tools, thus allowing self-consistent electro-thermal simulation of the device or circuit  ... 
doi:10.2298/fuee1503325m fatcat:r5bqtsqmvzabnjb6a7klbzaaii

Physics-based numerical simulation for design of high-voltage, extremely-high current density SiC power devices

Leonardo M. Hillkirk, Allen R. Hefner, Robert W. Dutton
2007 2007 International Semiconductor Device Research Symposium  
Optimization of SiC power devices requires the use of physics-based numerical modeling to predict the behavior of new device designs in realistic circuit conditions.  ...  Realistic transient, electro-thermal numerical modeling of bipolar-type SiC power devices has proven particularly challenging due to numerical convergence problems resulting from the low equilibrium free  ...  Optimization of SiC power devices requires the use of physics-based numerical modeling to predict the behavior of new device designs in realistic circuit conditions.  ... 
doi:10.1109/isdrs.2007.4422305 fatcat:pkpnng5cf5abjj43ezbwa24dai

Physics-based electro-thermal Saber model and parameter extraction for high-voltage SiC buffer-layer IGBTs

T. H. Duong, A. R. Hefner, J. M. Ortiz-Rodriguez, S.-H. Ryu, Edward Van Brunt, Lin Cheng, Scott Allen, John W. Palmour
2014 2014 IEEE Energy Conversion Congress and Exposition (ECCE)  
The purpose of this paper is to present a physicsbased electro-thermal Saber®* model and parameter extraction sequence for high-voltage SiC buffer layer nchannel insulated gate bipolar transistors (IGBTs  ...  The validated simulation results in this paper demonstrate that the new electro-thermal Saber® model for high-voltage SiC buffer layer n-channel IGBTs can be used to describe the static and dynamic behaviors  ...  CONCLUSIONS This paper presents a new electro-thermal model implemented in the Saber® circuit simulator and an extraction sequence for high-voltage SiC buffer layer IGBT devices.  ... 
doi:10.1109/ecce.2014.6953430 fatcat:g7a3mjxp3bbwzdgd5cirdekfre

Influence of design parameters on the short-circuit ruggedness of SiC power MOSFETs

G. Romano, M. Riccio, L. Maresca, G. Breglio, A. Irace, A. Fayyaz, A. Castellazzi
2016 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  
This work aims to present an investigation on short-circuit (SC) failure behaviour of SiC Power MOSFETs due to the onset of thermal runaway.  ...  TCAD simulations were performed to examine the impact of some parameters mismatch on hotspot formation and failure occurrence.  ...  Described situation was analysed thanks to electro-thermal (ET) physical simulations. The device was modelled by two parallel cells and was included in a mixed-mode schematic as depicted in Fig.3 .  ... 
doi:10.1109/ispsd.2016.7520774 fatcat:dwfz6e7fivbebicjci7b34a5a4

SiC power MOSFET in short-circuit operation: Electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementation

F. Boige, F. Richardeau, S. Lefebvre, M. Cousineau
2019 Mathematics and Computers in Simulation  
SiC power MOSFET in short-circuit operation: Electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementation.  ...  Abstract -The purpose of this paper is to describe, for the first time, a global transient electrothermal model of (SiC) power MOSFETs during accidental short-circuit (SC) operations.  ...  Nevertheless, until now, none electro-thermal models globally and accurately describe SiC power MOSFET behaviours under SC faults.  ... 
doi:10.1016/j.matcom.2018.09.020 fatcat:6ihccwde2zekleyjgciu63fvge

Thermal simulations of SiC MOSFETs under short-circuit conditions: influence of various simulation parameters

Yoann Pascal, Mickael Petit, Denis Labrousse, Francois Costa
2019 2019 IEEE International Workshop on Integrated Power Packaging (IWIPP)  
The temperature distribution in a Silicon Carbide (SiC) MOSFET during a destructive short-circuit is simulated using a custom 1D-finite difference model implemented using Matlab.  ...  We show that some of those simplifications (model of the heat source, die top-side boundary conditions, etc.), sometime in-spite of common sense, have a great impact on the simulated temperature.  ...  In [12] , two 1D electro-thermal models are proposed.  ... 
doi:10.1109/iwipp.2019.8799085 fatcat:bocyomnetbekrntdpicejxunca

Electro-Thermal Model of a Silicon Carbide Power MOSFET [chapter]

K. Frifita, N. K. M'Sirdi, E. Baghaz, A. Naamane, M. Boussak
2018 Lecture Notes in Electrical Engineering  
This paper proposes an electro thermal model for power silicon carbide (SiC) MOSFET based on the EKV MOSFET structure. The thermal dissipation is modeled as an RC Network.  ...  The model is developed for the SiC MOSFET C M D CREE ( V, A) and integrated in the Psim, Saber and Pspice simulation software libraries for prototyping.  ...  Acknowlegment This research is activity is held by the SASV group of the LSIS-UMR CNRS and co funded by the BPI in an FUI project.  ... 
doi:10.1007/978-981-13-1405-6_29 fatcat:l4rkbgm7vrfhveum6dnlwdueze

Thermal network component models for 10 kV SiC power module packages

Jose M. Ortiz-Rodriguez, Madelaine Hernandez-Mora, Tam H. Duong, Scott G. Leslie, Allen R. Hefner
2008 Power Electronics Specialist Conference (PESC), IEEE  
This enables the use of electro-thermal simulations to optimize S i c module parameters for specilic system requirements.  ...  Thermal nehvork component models for these modules are developed and are validated with temperature measurements obtained through various methods for a range of power dissipation levels.  ...  ELECTRO-THERMAL POWER MODULE SIMULATION The schematic shown in Fig. 16 depicts the electrothermal 100 A, 10 kV half-bridge Sic MOSFETIJBS power module model [I51 that is simulated using the thermal nctwork  ... 
doi:10.1109/pesc.2008.4592725 fatcat:3l5nph7fubgkrczfmqh4aykb6i
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