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2010 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)  
The VCO RFIC was implemented in a 0.13um 200GHz ft SiGe hetero-junction bipolar transistor (HBT) BiCMOS technology.  ...  It has been designed, within the framework of the European project DOTFIVE, with a new B3T bipolar technology developed by STMicroelectronics, in which NPN transistors reach a f t and f max of 260GHz and  ...  Buchholz For the first time, a large-signal RF stress study of complementary (npn + pnp) SiGe HBTs on thick-film SOI is performed, and analyses based on device physics are presented, shedding light on  ... 
doi:10.1109/bipol.2010.5668095 fatcat:4pe4n4q5lvf5zcnur667hnxcje

Measurement of collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's

G. Niu, J.D. Cressler, S. Zhang, U. Gogineni, D.C. Ahlgren
1999 IEEE Transactions on Electron Devices  
By turning on the secondary hole impact ionization, we revealed the difference in impact ionization between strained SiGe and Si in the presence of the "dead space" effect.  ...  This paper presents measurements of the avalanche multiplication factor (M 0 1) in SiGe HBT's using a new technique capable of separating the avalanche multiplication and Early effect contributions to  ...  His TABLE I SUMMARY I OF THE ELECTRICAL CHARACTERISTICS OF THE HIGH, MEDIUM, AND LOW N c SiGe HBT'S.  ... 
doi:10.1109/16.760410 fatcat:xdqysrmd55aodizvuxjcjieose

2020 Index IEEE Journal of the Electron Devices Society Vol. 8

2020 IEEE Journal of the Electron Devices Society  
Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverter.  ...  Characteristics of Ferroelectric Field-Effect Transistors.  ...  Resistors Low-Voltage Hf-ZnO Thin Film Transistors With Ag Nanowires Gate Electrode and Their Application in Logic Circuit. Wu, J., +, JEDS 2020  ... 
doi:10.1109/jeds.2021.3055467 fatcat:yhpqbxl4nffg7mg2cwuskvuuo4

V-band high gain SiGe power amplifier with wideband ESD protection

Keping Wang, Kaixue Ma, Kiat Seng Yeo
2015 2015 IEEE International Wireless Symposium (IWS 2015)  
This paper presents a low-power high-gain V-band power amplifier (PA) in a low-cost commercial 0.18-J.lm SiGe BiCMOS technology.  ...  A novel wideband ESD protection circuit is demonstrated with <1 dB insertion loss in frequency range of 17-88 GHz.  ...  Liou from University of Central Florida for ESD technique discussion and testing.  ... 
doi:10.1109/ieee-iws.2015.7164569 fatcat:kfllkoi3svc5fd7nfvmuxdt4ye

2020 Index IEEE Transactions on Electron Devices Vol. 67

2020 IEEE Transactions on Electron Devices  
of Charge Partitioning on IM3 Prediction in SOI-LDMOS Transistors; 606-613 Gupta, S.K., see Liang, Y., 1297-1304 Gupta, S.K., see Thakuria, N., TED Nov. 2020 4866-4874 Gupta, S.K., see Thakuria, N  ...  Module With Countermeasures Against Bipolar Degradation to Achieve Ultrahigh Power Density; TED May 2020 2035-2043 Ishikawa, Y., see Kuleshov, A., TED Feb. 2020 673-676 Ishizaki, T., see Tomioka, K.  ...  Effect of Stress on Pull-in Voltage of RF MEMS SPDT Switch.  ... 
doi:10.1109/ted.2021.3054448 fatcat:r4ertn5jordkfjjvorvss7n6ju

Front Matter: Volume 8549

Proceedings of SPIE, Monica Katiyar, B. Mazhari, Y N. Mohapatra
2012 16th International Workshop on Physics of Semiconductor Devices  
The CID Number appears on each page of the manuscript. The complete citation is used on the first page, and an abbreviated version on subsequent pages.  ...  SPIEDigitalLibrary.org Paper Numbering: Proceedings of SPIE follow an e-First publication model, with papers published first online and then in print and on CD-ROM.  ...  Malik, Indian Institute of Technology Delhi (India) 8549 0M 60 and 100 MeV oxygen ion irradiation effects on electrical characteristics of bipolar transistor [8549-93] K.  ... 
doi:10.1117/12.926917 fatcat:lkmmiysq7jcwda6bipt6tnxb4m

2020 Index IEEE Electron Device Letters Vol. 41

2020 IEEE Electron Device Letters  
., Improved Thermopile on Pyramidally-Textured Dielectric Film; LED July 2020 1094-1097 He, Y., see 1245-1248 He, Y., see 1360-1363 He, Y., see Zhang, C., LED April 2020 617-620 He, Y., Wang, Y., and  ...  ., +, LED March 2020 357-360 Carbon nanotube field effect transistors An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe 2 Hetero-Junction.  ...  Improvement Design for Turn-On Switching Characteristics in Surface Buffer Insulated Gate Bipolar Transistor.  ... 
doi:10.1109/led.2021.3052397 fatcat:3hcysdtecve2zhapvka44rw7z4

Mastering the Art of High Mobility Material Integration on Si: A Path towards Power-Efficient CMOS and Functional Scaling

Nadine Collaert
2016 Journal of Low Power Electronics and Applications  
for hetero-epitaxy of III-V on Si.  ...  In the case of Ge, these substrates can be fabricated either by bonding of a Ge donor wafer to an oxidized Si handle wafer or by the Ge condensation method, where a SiGe layer grown on a standard SOI (  ...  Conflicts of Interest: The author declares no conflict of interest.  ... 
doi:10.3390/jlpea6020009 fatcat:vnhup2q4sjafhmz36fh5kpgqpa

IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

1987 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.  
devices and circuits, device simulation and optimization and heterostructure field effect transistors.  ...  DISTRIBUTION CODE ABSTRACT (Maximum 200 words) The conference included the following sessions: Plenary" heterojunction bipolar transistors, poster session, resonant tunneling and novel devices, optoelectronic  ...  The measurement of the optical-to-electrical frequency response of the photoreceiver with a transimpedance amplifier was done in cooperation with J.P. Nicolazzi and R.  ... 
doi:10.1109/cornel.1987.721206 fatcat:kwwfh234a5cx5njrhddhkwhi6e

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

J. Y. Tsao, S. Chowdhury, M. A. Hollis, D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar, S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo (+21 others)
2017 Advanced Electronic Materials  
and RF electronics, as well as in deep-UV optoelectronics, quantum information, and extreme-environment applications.  ...  the state of their science and technology.  ...  Acknowledgments We acknowledge support from the National Science Foundation (NSF, Dimitris Pavlidis), the Army Research Office (ARO, Joe Qiu), the Air Force Office of Scientific Research (AFOSR, Ken Goretta  ... 
doi:10.1002/aelm.201600501 fatcat:u47te6dov5aj5mz22n6gcr6xcq

Future trends in microelectronics - reflections on the road to nanotechnology

1997 Precision engineering  
the data needed, and completing and reviewing the collection of information.  ...  Send comment regarding this burden estimates or any other aspect of this collection of information, including suggestions for reducing this burden, to Washington Headquarters Services, Directorate for  ...  The work at the University of Virginia has been partially supported by the ONR (Project Monitor Max Yoder). References. Acknowledgement ~  ... 
doi:10.1016/0141-6359(97)90048-9 fatcat:j7blw4wn6zbitmoqqffj46g54e

Call for Papers: PRiME 2012, Honolulu, Hawaii, October 7-12, 2012

2011 The Electrochemical Society Interface  
Contributed papers will be programmed in some related order, depending on the titles and contents of the submitted abstracts.  ...  : including the design, fabrication, and evaluation of biosensors, biofuel cells, and bioprobes, as well as electrochemical lab-on-a-chip devices for bioanalysis and biomedical applications.  ...  FET technology: SSCMOS, SiGe FET structures, SiGe HEMTs, SiGe MODFETs, SiGe FET structures on SOI, RTD, Ge-FETs, low voltage and low power; (3.) optoelectronics: detectors, waveguides, quantum cascade  ... 
doi:10.1149/2.017114if fatcat:kczhfibf2zfdhotvo2h7oets5e

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

Andrea C Ferrari, Francesco Bonaccorso, Vladimir Fal'ko, Konstantin S Novoselov, Stephan Roche, Peter Bøggild, Stefano Borini, Frank H L Koppens, Vincenzo Palermo, Nicola Pugno, José A Garrido, Roman Sordan (+52 others)
2015 Nanoscale  
We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting  ...  This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project.  ...  gates is 0.8 V at a supply of 5.2 V, i.e., only 15% of the supply voltage. 1161 ECL gates are at the core of the fastest SiGe and InP bipolar-CMOS (BiCMOS) or heterojunction bipolar transistor (HBT)  ... 
doi:10.1039/c4nr01600a pmid:25707682 fatcat:hzfkhollfbbunbdroujkvqzxke

MCsn+-SIMS: An Innovative Approach for Direct Compositional Analysis of Materials without Standards

Biswajit Saha, Purushottam Chakraborty
2013 Energy Procedia  
We have discussed a systematic study on the effect of reactive species like oxygen and cesium on the emission of MCs n + molecular ions.  ...  Suppression of matrix effects in the compositional analysis of molecular beam epitaxy (MBE) -grown SiGe alloy structures has been discussed in detail.  ...  Despite the fact that the main commercial heterostructure based on SiGe is the heterojunction bipolar transistor (HBT), the complementary metaloxide-semiconductor (CMOS) research has also focused on the  ... 
doi:10.1016/j.egypro.2013.09.009 fatcat:hasmuqqijzfsfi6qzots2v5plu

Mechanical and electrical characterization of CVD-grown graphene transferred on chalcogenide Ge 2 Sb 2 Te 5 layers

G. D'Arrigo, M. Christian, V. Morandi, G. Favaro, C. Bongiorno, A.M. Mio, M. Russo, A. Sitta, M. Calabretta, A. Sciuto, E. Piccinini, L. D'Urso (+1 others)
2018 Carbon  
This effect is known as shape memory effect (SME). [1] Among SMM, shape memory polymers (SMP) represent an important part of this class of materials.  ...  These effect of nanotubes on the shape memory features of the prepared systems was related to their microstructure, defined through morphological, thermal and mechanical analysis.  ...  Recent advancements in the synthesis of NPGs and their applications in field effect transistors (FETs), sensors, electrochemical capacitors, nucleic acid analysis and molecular sieving have been reported  ... 
doi:10.1016/j.carbon.2018.02.046 fatcat:wiqrs5krczgrrahoa7hl2rgtcm
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