156 Hits in 7.7 sec

Selective growth of InAs quantum dots by metalorganic chemical vapor deposition

T.S. Yeoh, R.B. Swint, A. Gaur, V.C. Elarde, J.J. Coleman
2002 IEEE Journal of Selected Topics in Quantum Electronics  
Furthermore, by utilizing self-assembled nanostructures as a template, selective growth of coalesced wires and dots with 100-nm feature sizes are realized.  ...  We report results of both strain-driven surface segregation of indium from InGaAs thin films as well as selective area epitaxy of InAs quantum dots using these films.  ...  This phenomenon has been observed in the Ge-Si system for thin films of Si Ge alloys on Si, where mismatches less that 4% have been observed to undergo strain-driven surface roughening [27] .  ... 
doi:10.1109/jstqe.2002.801735 fatcat:4qwoc6r7zbdkfh6bx72ovs4bty

Strong Electro-Absorption in GeSi Epitaxy on Silicon-on-Insulator (SOI)

Ying Luo, Xuezhe Zheng, Guoliang Li, Ivan Shubin, Hiren Thacker, Jin Yao, Jin-Hyoung Lee, Dazeng Feng, Joan Fong, Cheng-Chih Kung, Shirong Liao, Roshanak Shafiiha (+4 others)
2012 Micromachines  
We have investigated the selective epitaxial growth of GeSi bulk material on silicon-on-insulator substrates by reduced pressure chemical vapor deposition.  ...  We compared measured ∆α/α performance to that of bulk Ge.  ...  Acknowledgments The authors would like to thank Lawrence semiconductor for the GeSi epi growth. This material is based upon work supported, in part, by DARPA under Agreement No. HR0011-08-09-0001.  ... 
doi:10.3390/mi3020345 fatcat:bodylna7nfcofcc7acwojdu64q

Heteroepitaxial Growth of III-V Semiconductors on Silicon

Jae-Seong Park, Mingchu Tang, Siming Chen, Huiyun Liu
2020 Crystals  
In this paper, the recent advances in the heteroepitaxial growth of III-V on Si substrates, particularly GaAs and InP, are discussed.  ...  on Si.  ...  [145] directly compared the effect of three-step growth on the quality of GaAs on Si with two-step growth.  ... 
doi:10.3390/cryst10121163 fatcat:meagj6sj4fgnzpwib335bnhmke

Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon

Yong Du, Buqing Xu, Guilei Wang, Yuanhao Miao, Ben Li, Zhenzhen Kong, Yan Dong, Wenwu Wang, Henry H. Radamson
2022 Nanomaterials  
Based on the previous literature investigation, two main concepts (global growth and selective epitaxial growth (SEG)) were proposed.  ...  a full understanding on the group III-V hetero-epitaxial growth on Si substrates.  ...  Barrett et al. [101] investigated the post growth annealing (PGA) effect on growing GaAs films on Si (001).  ... 
doi:10.3390/nano12050741 pmid:35269230 pmcid:PMC8912022 fatcat:2szyd5ecinc7re5qflymwqucvi

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

A. G. Taboada, M. Meduňa, M. Salvalaglio, F. Isa, T. Kreiliger, C. V. Falub, E. Barthazy Meier, E. Müller, L. Miglio, G. Isella, H. von Känel
2016 Journal of Applied Physics  
Niedermann is acknowledged for the Si patterned substrates fabrication.  ...  We want to acknowledge to CEITEC open access project LM2011020 as well, funded by Czech Ministry of Education and one author wishes to acknowledge also the projects Research4Industry (CZ.1.07/2.4.00/17.0006  ...  GaAs crystals with heights between 2 and 6 lm were grown onto the Ge/Si mesas at T ¼ 680 C and a growth rate of 28 nm/min.  ... 
doi:10.1063/1.4940379 fatcat:2ugutaf4d5dv7cjk77vso3oioi

Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques

Gianni Taraschi, Arthur J. Pitera, Eugene A. Fitzgerald
2004 Solid-State Electronics  
In this paper, a brief introduction of each method is presented, with a detailed discussion of wafer bonding approaches for strained Si, SiGe, and Ge on-insulator.  ...  Techniques for fabricating strained Si, SiGe, and Ge on-insulator include SIMOX, Ge condensation and wafer bonding.  ...  One of us (Gianni Taraschi) would like to thank FCAR (Fonds Formation Chercheurs & Aide Recherch e) for a graduate fellowship.  ... 
doi:10.1016/j.sse.2004.01.012 fatcat:bl2ygfldgbco3ham37pklppcsy

Uprooting defects to enable high-performance III–V optoelectronic devices on silicon

Youcef A. Bioud, Abderraouf Boucherif, Maksym Myronov, Ali Soltani, Gilles Patriarche, Nadi Braidy, Mourad Jellite, Dominique Drouin, Richard Arès
2019 Nature Communications  
Collectively, this work demonstrates the promise for transfer of this technology to industrial-scale production of integrated photonic and optoelectronic devices on Si platforms in a cost-effective way  ...  The optical properties indicate a strong enhancement of luminescence efficiency in GaAs grown on this virtual substrate.  ...  Acknowledgements The authors would like to thank SUNLAB group at the University of Ottawa, K. Schulte from NREL and M. Rondeau for fruitful discussions, D.  ... 
doi:10.1038/s41467-019-12353-9 pmid:31541107 pmcid:PMC6754402 fatcat:b4sj24fbwvf4hdxb7uxnrmz6ne

SiGe Based Visible-NIR Photodetector Technology for Optoelectronic Applications [chapter]

Ashok K. Sood, John W. Zeller, Robert A. Richwine, Yash R. Puri, Harry Efstathiadis, Pradeep Haldar, Nibir K. Dhar, Dennis L. Polla
2015 Advances in Optical Fiber Technology: Fundamental Optical Phenomena and Applications  
Effect of (a) buffer layer grown by two-step growth, and (b) high temperature annealing, on dark current density characteristics [68] .  ...  Effect of (a) buffer layer grown by two-step growth, and (b) high temperature annealing, on dark current density characteristics [68] .  ... 
doi:10.5772/59065 fatcat:ngwje5sx3bf5ldcikvbp7kdham

Quantum Size Effects in the Growth and Properties of Ultrathin Metal Films, Alloys, and Related Low-Dimensional Structures [chapter]

Y. Jia, M.M. Özer, H.H. Weitering, Z. Zhang
2010 Nanophenomena at Surfaces  
The emphasis is on the contribution to the overall energetics from the electronic degrees of freedom of the low-dimensional systems.  ...  The "electronic growth" mode as emphasized here serves as an intriguing addition to the three well-established classic modes of crystal growth.  ...  The selected height can be tuned by changing the deposition or post-annealing temperature: the lower the temperature, the lower the average island height.  ... 
doi:10.1007/978-3-642-16510-8_4 fatcat:q2h35wt3rbhufdp7kppzr34wem

Advances in Infrared Detector Array Technology [chapter]

Nibir K., Ravi Dat, Ashok K.
2013 Optoelectronics - Advanced Materials and Devices  
In lieu of photon starved scenes, arrays of infrared Light Emitting Diodes (LEDs) can provide a very cost effective solution for short-range illumination.  ...  The remaining portions of the spectrum are often called "atmospheric transmission windows," and define the infrared bands that are usable on Earth.  ...  Acknowledgements The authors gratefully acknowledge the contributions of the many performers on the DAR-PA-AWARE program who have provided the results described in this manuscript and have been essential  ... 
doi:10.5772/51665 fatcat:zvlnlj2znzauzk7luis43bm73q

Compliant Substrates for Heteroepitaxial Semiconductor Devices: Theory, Experiment, and Current Directions

J.E. Ayers
2008 Journal of Electronic Materials  
Key experimental results are summarized for a number of compliant substrate technologies, including cantilevered membranes, silicon-on-insulator, twist bonding, and glass bonding.  ...  Two approaches of current interest, layer transfer and universal compliant trench (UCT) substrates, are presented as potential solutions to the problem of limited absolute compliance in planar compliant  ...  An 180-nm-thick Si 0.85 Ge 0.15 layer (f = -0.0062 and h c = 17 nm) was grown by MBE at 400°C, and the relaxation and dislocation structure were observed in the as-grown sample and after post-growth annealing  ... 
doi:10.1007/s11664-008-0504-6 fatcat:a2i5yfocvvhpnll7tlwtkmuwze

Germanium Photodetector Technologies for Optical Communication Applications [chapter]

Kah-Wee Ang, Guo-Qiang Lo, Dim-Lee Kwong
2010 Semiconductor Technologies  
The use of a low temperature growth is intended to suppress adatoms migration on Si and thus prevents the formation of 3D SK growth, which allows a flat Ge surface morphology to be achieved.  ...  In addition, selective area growth of Ge on Si has also been developed using a cyclical deposition and etch back approach.  ...  Parameter Ge PIN PD Ge MSM PD Ge/Si APD  ... 
doi:10.5772/8572 fatcat:23fgeqbmenfetpcinn272cn6me

Strained Si on insulator technology: from materials to devices

T.A Langdo, M.T Currie, Z.-Y Cheng, J.G Fiorenza, M Erdtmann, G Braithwaite, C.W Leitz, C.J Vineis, J.A Carlin, A Lochtefeld, M.T Bulsara, I Lauer (+2 others)
2004 Solid-State Electronics  
We demonstrate fabrication of 20% Ge equivalent strain level SSOI substrates with Si thicknesses of 100 and 400 A by hydrogeninduced layer transfer of strained Si layers from high quality graded SiGe virtual  ...  leakage current effects.  ...  Yuri Erokhin of Varian Semiconductor and Arthur Pitera and Jong Wan Jung of MIT are gratefully acknowledged.  ... 
doi:10.1016/j.sse.2004.02.013 fatcat:m53tswsw7jbeldjh5hyx5rrjtq

Low threshold quantum dot lasers directly grown on unpatterned quasi-nominal (001) Si

Yating Wan, John E. Bowers, Chen Shang, Justin Norman, Bei Shi, Qiang Li, Noelle Collins, Mario Dumont, Kei May Lau, Arthur Gossard
2020 IEEE Journal of Selected Topics in Quantum Electronics  
Direct growth on unpatterned quasi-nominal (001) Si may yield the best material quality at the lowest lifecycle cost.  ...  A comparison of various monolithic III-V hetero-epitaxy on Si solutions is presented.  ...  The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof.  ... 
doi:10.1109/jstqe.2020.2964381 fatcat:rogzt4crpzfvdfchbwcpwwc7yu

High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition

Matthew S. Wong, David Hwang, Abdullah I. Alhassan, Changmin Lee, Ryan Ley, Shuji Nakamura, Steven P. DenBaars
2018 Optics Express  
In this work, we examined the effect of aluminum flux on the structure of high Alcomposition m-plane Al x Ga 1-x N/GaN (x>0.5) superlattices grown by plasma-enhanced MBE under metal-rich conditions and  ...  Sample A was grown to examine the dependence of AlGaN structure on Al flux and to identify the transition to the instability regime.  ...  Here, we increase the achievable refractive index contrast by post-growth selective etching of the silicon dioxide.  ... 
doi:10.1364/oe.26.021324 pmid:30119435 fatcat:qmwhybzgfjfxfolqwvhivbsezm
« Previous Showing results 1 — 15 out of 156 results